Patents by Inventor David William Laidler

David William Laidler has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method to make markers for double gate SOI processing
    Patent number: 7488669
    Abstract: A method of making at least one marker (MX) for double gate SOI processing on a SOI wafer is disclosed. The marker has a diffracting structure in a first direction and the diffracting structure is configured to generate an asymmetrical diffraction pattern during use in an alignment and overlay detection system for detection in the first direction.
    Type: Grant
    Filed: March 16, 2005
    Date of Patent: February 10, 2009
    Assignees: Interuniversitair Microelektronica Centrum vzw (IMEC), Koninklijke Philips Electronics
    Inventors: Josine Johanna Gerarda Petra Loo, Youri V. Ponomarev, David William Laidler