Abstract: Photo-sensors, such as photo-diodes, are formed using regions with cross-sections that increase the overall quantum efficiency of the resulting photo-sensor. The cross-sections have additional (e.g., interior) side-wall interfaces, and, in some embodiments, an additional, relatively shallow bottom interface. The increased total side-wall area and any additional shallow bottom area increase the total photo-junction volume located near the surface of the device. As a result, a greater fraction of photons having relatively small absorption lengths (e.g., blue light) will be absorbed within a photo-junction, thereby increasing the quantum efficiency for those photons. The present invention enables photo-sensors to be implemented with more uniform spectral response.

Abstract: Photo-sensors, such as photo-diodes, are formed using regions having layout shapes that tend to decrease leakage associated with high electric field strengths and mechanical stresses along the region's non-horizontal edges. According to one characterization of the present invention, the regions have a layout shape having more than four sides, in which all interior angles between adjacent sides of the layout shape are greater than 90 degrees. According to another characterization, the regions have a layout shape having at least one pair of mutually orthogonal sides with an intervening side that forms two interior angles greater than 90 degrees with the mutually orthogonal sides. Under either characterization, the electric field strengths and the mechanical stresses along the non-horizontal edges of the region defined by the adjacent sides of the layout shape, are reduced, thereby reducing leakage and increasing the overall quantum efficiency of the resulting photo-sensors.

Abstract: Photo-sensors, such as photo-diodes, are formed using regions with cross-sections that increase the overall quantum efficiency of the resulting photo-sensor. The cross-sections have additional (e.g., interior) side-wall interfaces, and, in some embodiments, an additional, relatively shallow bottom interface. The increased total side-wall area and any additional shallow bottom area increase the total photo-junction volume located near the surface of the device. As a result, a greater fraction of photons having relatively small absorption lengths (e.g., blue light) will be absorbed within a photo-junction, thereby increasing the quantum efficiency for those photons. The present invention enables photo-sensors to be implemented with more uniform spectral response.