Abstract: This invention relates to a protection network for electrostatic discharge in between the VDD power line and IO pad or two different power line of two different potentials. In more particular a series devices in combination with at least one NMOS which substrate is completely isolated from its N-diffusion to form a protection network between the IO pad and Vdd line so that the IO pad can sustain high voltage than the VDD power. Different embodiments are shown. The application of such device or devices is independent of voltage difference and the power on or off sequence. Further more those devices can be used when hot-plug is required which means inserting such device during the power on would not introduce any significant transient leakage current between the IO pad and Vdd.

Abstract: A method for fabricating a metal-oxide-metal capacitor is described. A first insulating layer is provided overlying a semiconductor substrate. A conducting line is formed on the surface of said first insulating layer to act as the node contact for the capacitor. A second insulating layer is deposited overlying the conducting line. The second insulating layer is etched through to form contact or via openings to the conducting line. The contact/via openings are filled with metal plugs wherein the metal plugs form the bottom plate electrode of the capacitor. The second insulating layer surrounding the metal plugs is etched into to form a trench for the capacitor. A capacitor dielectric layer is deposited over the surface of the second insulating layer and the metal plugs. A barrier metal layer is deposited overlying the capacitor dielectric layer.

Abstract: A method for fabricating a metal-oxide-metal capacitor is described. A first insulating layer is provided overlying a semiconductor substrate. A conducting line is formed on the surface of said first insulating layer to act as the node contact for the capacitor. A second insulating layer is deposited overlying the conducting line. The second insulating layer is etched through to form contact or via openings to the conducting line. The contact/via openings are filled with metal plugs wherein the metal plugs form the bottom plate electrode of the capacitor. The second insulating layer surrounding the metal plugs is etched into to form a trench for the capacitor. A capacitor dielectric layer is deposited over the surface of the second insulating layer and the metal plugs. A barrier metal layer is deposited overlying the capacitor dielectric layer.