Abstract: A method and device for determining temperature of a substrate in a vacuum processing apparatus during a process of the substrate are disclosed, the substrate to be measured is placed on a susceptor in the vacuum processing apparatus for a manufacture process, and the method includes: selecting i wavelengths from radiance emitted from the susceptor through a substrate, where i is a natural number greater than 1; obtaining at least i pieces of radiance corresponding to the selected i wavelengths; and calculating the temperature of the substrate based on the i pieces of radiance and the i wavelengths, by using a mathematical equation: E(?i)=T(d)×M(?i,T), where E(?i) is the ith radiant quantity corresponding to the ith wavelength ?i, T(d) is transmittance of the substrate, which is a function of thickness d of a film grown on the substrate, and M(?i,T) is blackbody radiation equation, which is a function of the ith wavelength ?i and the substrate temperature T.

Abstract: A method and device for determining temperature of a substrate in a vacuum processing apparatus during a process of the substrate are disclosed, the substrate to be measured is placed on a susceptor in the vacuum processing apparatus for a manufacture process, and the method includes: selecting i wavelengths from radiance emitted from the susceptor through a substrate, where i is a natural number greater than 1; obtaining at least i pieces of radiance corresponding to the selected i wavelengths; and calculating the temperature of the substrate based on the i pieces of radiance and the i wavelengths, by using a mathematical equation: E(?i)=T(d)×M(?i,T), where E(?i) is the ith radiant quantity corresponding to the ith wavelength ?i, T(d) is transmittance of the substrate, which is a function of thickness d of a film grown on the substrate, and M(?i,T) is blackbody radiation equation, which is a function of the ith wavelength ?i and the substrate temperature T.