Abstract: Described are methods for removing titanium species, including titanium metal and titanium nitride, from titanium substrates. Hydrofluoric acid chemistries are traditionally disfavored for such tasks, as hydrofluoric acid tends to attack the underlying titanium substrate. A chemistry in accordance with one embodiment employs a mixture of hydrofluoric acid and hydrogen peroxide that vigorously attacks deposited titanium and titanium nitride without significantly attacking the machined titanium alloys normally used to form titanium components for semiconductor processing.

Abstract: Described are methods, systems, and chemistries for cleaning various components of semiconductor process equipment. A method in accordance with one embodiment cleans articles with differently contaminated interior and exterior surfaces by using those articles to separate a cleaning vessel into separate chambers, one chamber for the interior surface and one for the exterior surface. Different chemistries are then applied to the differently contaminated surfaces. This embodiment reduces the required volume of etchant, and consequently saves the cost, treatment, and disposal of toxic chemicals. One embodiment further reduces the requisite etchant volume using one or more volume-displacement elements that displace some of the etchant volume.

Abstract: Described are methods, systems, and chemistries for cleaning various components of semiconductor process equipment. A method in accordance with another embodiment removes layers of stubborn silicon and silicon-nitride contamination layers from the inside surfaces of such articles as deposition tubes. In such embodiments, a tube to be cleaned is gently rolled on it side while a portion the tube's interior surface is exposed to an etchant. The tube is only partially filled with etchant to reduce the requisite etchant volume, and the rolling motion evenly exposes the contaminated inner surface to the etchant.