Patents by Inventor Davide Betto

Davide Betto has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Single magnetic-layer microwave oscillator
    Patent number: 11533020
    Abstract: A method and system for generating voltage and/or current oscillations in a single magnetic layer is provided. The method comprises applying a direct voltage/current to the layer in a longitudinal direction; and developing a longitudinal voltage between a pair of longitudinal voltage leads and/or a transverse voltage between a pair of transverse voltage leads. The magnetic layer comprises a ferrimagnetic or antiferrimagnetic material having a first and second magnetic sub-lattice, wherein the first sub-lattice is a dominant sub-lattice such that the charge carriers at the Fermi energy originate predominantly from the dominant sub-lattice and the charge carriers at the Fermi energy are spin polarised. In some embodiments, the dominant current carrying sub-lattice may lack inversion symmetry.
    Type: Grant
    Filed: April 23, 2019
    Date of Patent: December 20, 2022
    Assignee: THE PROVOST, FELLOWS, FOUNDATION SCHOLARS, AND THE OTHER MEMBERS OF BOARD, OF THE COLLEGE OF THE HOLY AND UNDIVIDED TRINITY OF QUEEN ELIZABETH, NEAR DUBLIN
    Inventors: Karsten Rode, Plamen Stamenov, John Michael David Coey, Yong Chang Lau, Davide Betto, Arne Brataas, Roberto Troncoso
  • SINGLE MAGNETIC-LAYER MICROWAVE OSCILLATOR
    Publication number: 20210044254
    Abstract: A method and system for generating voltage and/or current oscillations in a single magnetic layer is provided. The method comprises applying a direct voltage/current to the layer in a longitudinal direction; and developing a longitudinal voltage between a pair of longitudinal voltage leads and/or a transverse voltage between a pair of transverse voltage leads. The magnetic layer comprises a ferrimagnetic or antiferrimagnetic material having a first and second magnetic sub-lattice, wherein the first sub-lattice is a dominant sub-lattice such that the charge carriers at the Fermi energy originate predominantly from the dominant sub-lattice and the charge carriers at the Fermi energy are spin polarised. In some embodiments, the dominant current carrying sub-lattice may lack inversion symmetry.
    Type: Application
    Filed: April 23, 2019
    Publication date: February 11, 2021
    Inventors: Karsten Rode, Plamen Stamenov, John Michael David Coey, Yong Lau Chang, Davide Betto