Abstract: An embodiment of an IGBT device is integrated in a chip of semiconductor material including a substrate of a first type of conductivity, an active layer of a second type of conductivity formed on an inner surface of the substrate, a body region of the first type of conductivity extending within the active layer from a front surface thereof opposite the inner surface, a source region of the second type of conductivity extending within the body region from the front surface, a channel region being defined within the body region between the source region and the active layer, a gate element insulated from the front surface extending over the channel region, a collector terminal contacting the substrate on a rear surface thereof opposite the inner surface, an emitter terminal contacting the source region and the body region on the front surface, and a gate terminal contacting the gate element.

Abstract: A spark plug, including an insulator embedding a first metallic electrode axially extending therethrough from a high voltage outer end terminal to the center of the inner end of the insulator from which it protrudes; a metallic ground electrode isolated from the first electrode and having an extended inner termination facing toward the first electrode extending from the insulator tip for defining therebetween a spark gap, a resistive element connected to the ground electrode such that upon mounting the spark plug in an internal combustion engine, the ground electrode electrically connects to the engine body through the resistive element; and a second outer termination of the ground electrode, adapted to constitute an accessible sensing terminal.

Abstract: An integrated vacuum microelectronic device comprises: a highly doped semiconductor substrate, at least one insulating layer) placed above said doped semiconductor substrate, a vacuum aperture formed within said at least one insulating layer and extending to the highly doped semiconductor substrate, a first metal layer acting as a cathode, a second metal layer placed under said highly doped semiconductor substrate and acting as an anode. The first metal layer is placed adjacent to the upper edge of the vacuum aperture and the vacuum aperture has a width dimension such as the first metal layer remains suspended over the vacuum aperture.

Abstract: A contact pad for an electronic device integrated in a semiconductor material chip is formed from a succession of protruding elements. Each protruding element extends transversally to a main surface of the chip and has a rounded terminal portion. Adjacent pairs protruding elements define an opening which is partially filled with a first conductive material to form a contact structure that is in electrical contact with an integrated electronic device formed in the chip. A layer of a second conductive material is deposited to cover said protruding elements and the contact structures so as to form the contact pad.

Abstract: An embodiment of an IGBT device is integrated in a chip of semiconductor material including a substrate of a first type of conductivity, an active layer of a second type of conductivity formed on an inner surface of the substrate, a body region of the first type of conductivity extending within the active layer from a front surface thereof opposite the inner surface, a source region of the second type of conductivity extending within the body region from the front surface, a channel region being defined within the body region between the source region and the active layer, a gate element insulated from the front surface extending over the channel region, a collector terminal contacting the substrate on a rear surface thereof opposite the inner surface, an emitter terminal contacting the source region and the body region on the front surface, and a gate terminal contacting the gate element.

Abstract: A passive bond pad condition sense structure may be configured to be electrically stimulated and tested for detecting an anomalous or altered electrical characteristic caused by stress or aging of the bond pad capacitively coupled to it. The related bond pad condition testing or monitoring system may include relatively simple stimulating and sensing circuits that may be wholly embedded in the integrated circuit device.

Abstract: An IGBT transistor includes a drift region, at least one body region housed in the drift region and having a first type of conductivity, and a conduction region, which crosses the body region in a direction perpendicular to a surface of the drift region and has the first type of conductivity and a lower resistance than the body region. The conduction region includes a plurality of implant regions, arranged at respective depths from the surface of the drift region.

Abstract: A photolithographic process, wherein a photosensitive layer is formed on a surface of a body to be defined; the photosensitive layer is exposed through a photolithographic mask having zones with lower transparency and zones with higher transparency so as to obtain exposed portions and shielded portions of the photosensitive layer; selective portions of the photosensitive layer chosen between the exposed portions and the shielded portions of the photosensitive layer are removed; and portions of the body under the selective portions of the photosensitive layer are selectively removed. The composite layer includes photoresist and carbon nanotubes, which are embedded in the photoresist and extend in a direction generally transverse to, and in electrical contact with, the body.

Abstract: A semiconductor detector of gravitational waves of a first frequency may include an oscillator having a metal coated oscillating member over a metal coated semiconductor substrate to be subjected to a Casimir attraction force towards the semiconductor substrate. The oscillator may be configured to exert a force to counterbalance the Casimir attraction force causing the oscillating member oscillates with a main harmonic resonance frequency equal to the first frequency. A displacement sensor may be coupled to the substrate and oscillating member and configured to sense oscillations and to generate corresponding sense signals. A pass-band filter may be tuned to the main harmonic resonance frequency and configured to generate band-pass replica signals of the sense signals, and an airtight package may be configured to keep a vacuum between the oscillating member and the semiconductor substrate. An array of semiconductor detectors and a method of detecting gravitational waves are also disclosed.

Abstract: A VTMOS transistor in semiconductor material of a first type of conductivity includes a body region of a second type of conductivity and a source region of the first type of conductivity. A gate region extends into the main surface through the body region and is insulated from the semiconductor material. A region of the gate region extends onto the main surface is insulated from the rest of the gate region. An anode region of the first type of conductivity is formed into said insulated region, and a cathode region of the second type of conductivity is formed into said insulated region in contact with the anode region; the anode region and the cathode region define a thermal diode electrically insulated from the chip.

Abstract: An electronic device includes a first semi-conductor die, a second semi-conductor die and an electrically conductive element. The electrically conductive element includes a first electrically conductive part interposed at least partially between the first semi-conductor die and the second semi-conductor die, wherein said first part is electrically coupled to the first semi-conductor die. The electrically conductive element further includes a second electrically conductive part electrically coupled to the first part, wherein said second part extends from at least part of the first part. The first part is an electrically conductive strap between the dice, and the second part is clip extending from at least part of the strap.

Abstract: A monitoring device may include a core cell including a detection circuit, and a radio frequency (RF) tag antenna configured to exchange data with a data acquisition reader device, and a single-tier corolla having sensor cells around the core cell and covering a monitoring area. The sensor cells may be configured to convert a change of a parameter at the cell location. The detection circuit may be configured to detect a change in the parameter and location based upon excitation by the reader device.

Abstract: A passive bond pad condition sense structure may be configured to be electrically stimulated and tested for detecting an anomalous or altered electrical characteristic caused by stress or aging of the bond pad capacitively coupled to it. The related bond pad condition testing or monitoring system may include relatively simple stimulating and sensing circuits that may be wholly embedded in the integrated circuit device.

Abstract: A contact pad for an electronic device integrated in a semiconductor material chip is formed from a succession of protruding elements. Each protruding element extends transversally to a main surface of the chip and has a rounded terminal portion. Adjacent pairs protruding elements define an opening which is partially filled with a first conductive material to form a contact structure that is in electrical contact with an integrated electronic device formed in the chip. A layer of a second conductive material is deposited to cover said protruding elements and the contact structures so as to form the contact pad.

Abstract: An electronic device includes a first semi-conductor die, a second semi-conductor die and an electrically conductive element. The electrically conductive element includes a first electrically conductive part interposed at least partially between the first semi-conductor die and the second semi-conductor die, wherein said first part is electrically coupled to the first semi-conductor die. The electrically conductive element further includes a second electrically conductive part electrically coupled to the first part, wherein said second part extends from at least part of the first part. The first part is an electrically conductive strap between the dice, and the second part is clip extending from at least part of the strap.

Abstract: A moving device to move across a surface including a motor rolling motion apparatus is disclosed. The moving device is coupled to the motor and has a body with an outer surface. A dense population of fibrils protrudes from the outer surface, with each fibril having a free-end termination configured to establish adhesion to the surface by inter-molecular Van der Waals forces.

Abstract: A monitoring device may include a core cell including a detection circuit, and a radio frequency (RF) tag antenna configured to exchange data with a data acquisition reader device, and a single-tier corolla having sensor cells around the core cell and covering a monitoring area. The sensor cells may be configured to convert a change of a parameter at the cell location. The detection circuit may be configured to detect a change in the parameter and location based upon excitation by the reader device.

Abstract: An embodiment of an IGBT device is integrated in a chip of semiconductor material including a substrate of a first type of conductivity, an active layer of a second type of conductivity formed on an inner surface of the substrate, a body region of the first type of conductivity extending within the active layer from a front surface thereof opposite the inner surface, a source region of the second type of conductivity extending within the body region from the front surface, a channel region being defined within the body region between the source region and the active layer, a gate element insulated from the front surface extending over the channel region, a collector terminal contacting the substrate on a rear surface thereof opposite the inner surface, an emitter terminal contacting the source region and the body region on the front surface, and a gate terminal contacting the gate element.

Abstract: A system for identifying a plurality of components of a vehicle that includes a plurality of non-volatile memories for storing identifiers associated with the plurality of vehicle components, a controller of the plurality of the vehicle components, a communication network configured for connecting the controller to the plurality of memories, and an identifiers memory including a portion to store a list of a plurality of type-approved identifiers associated with the plurality of type-approved vehicle components. The controller receives the identifiers, reads from the portion of the identifiers memory the list of type-approved identifiers, and checks if the identifiers of the plurality of components are included in the list of the type-approved identifiers, and when the controller detects that an identifier associated with a component out of the plurality of components is not included in the list, the controller blocks operation of the component.

Abstract: An IGBT transistor includes a drift region, at least one body region housed in the drift region and having a first type of conductivity, and a conduction region, which crosses the body region in a direction perpendicular to a surface of the drift region and has the first type of conductivity and a lower resistance than the body region. The conduction region includes a plurality of implant regions, arranged at respective depths from the surface of the drift region.