Abstract: A gas exhaust conduit pair comprising a first gas exhaust conduit and a second gas exhaust conduit is disclosed. The first gas exhaust conduit comprises a first end configured for coupling to a first gas exhaust line; a second, closed end opposite the first end; a first gas exhaust conduit wall extending in a first direction between the first end and the second end and enclosing a first gas conduction channel; and a first set of holes in the first gas exhaust conduit wall. The second gas exhaust conduit comprises a first end configured for coupling to a second gas exhaust line; a second, closed end opposite the first end; a second gas exhaust conduit wall extending the first direction between the first end and the second end and enclosing a second gas conduction channel; and a second set of holes in the second gas exhaust conduit wall. The first set of holes has a different arrangement to the second set of holes.

Abstract: A semiconductor processing apparatus is disclosed. The apparatus comprises a process chamber configured to receive a plurality of substrates supported by a substrate boat; at least one gas injector for providing a gas to the process chamber; at least two gas exhaust outlets for removing a gas from the process chamber; and at least two gas exhaust conduits, each connected to a respective gas exhaust outlet. Each of the gas exhaust conduits extends in a vertical direction inside the process chamber over at least part of the substrate boat. At least one of the gas exhaust conduits comprises a plurality of holes spaced apart in the vertical direction.

Abstract: A semiconductor processing apparatus is disclosed. The semiconductor processing apparatus comprises a process chamber configured to receive a plurality of substrates; at least one accumulator vessel in fluid communication with the process chamber, configured to store a precursor in gas form; and at least two solid state precursor storage vessels, each being configured to receive a precursor in gas form, to cause said received gas form precursor to be converted to a solid state inside the respective solid state precursor storage vessel, and to cause said solid state precursor to be converted to gas phase. Each of the at least two solid state precursor storage vessels are in fluid communication with the at least one accumulator vessel so as to allow provision of precursor in gas form to the accumulator vessel. The at least one accumulator vessel comprises an actuatable element configured to cause an internal volume of the at least one accumulator vessel to be changed upon actuation.

Abstract: A semiconductor processing apparatus is disclosed. The semiconductor processing apparatus comprises a process chamber configured to receive a plurality of substrates; an accumulator vessel in fluid communication with the process chamber, configured to store a precursor in gas form; and at least two solid state precursor storage vessels, each being configured to receive a precursor in gas form, to cause said received gas form precursor to be converted to a solid state inside the respective solid state precursor storage vessel, and to cause said solid state precursor to be converted to gas phase. Each of the at least two solid state precursor storage vessels are in fluid communication with the accumulator vessel.

Abstract: A precursor supply vessel is disclosed. The precursor supply vessel comprises a top wall, a bottom wall, and a side wall; a top wall heater configured and arranged to heat the top wall, a bottom wall heater configured and arranged to heat the bottom wall, and a side wall heater configured and arranged to heat the side wall. Each of the heaters is independently controllable.

Abstract: A vessel for containing a precursor in liquid or solid form is disclosed. The vessel comprises an inlet port for supplying a gas to the interior of the vessel and an outlet port for removing a gas from the interior of the vessel, the inlet port and the outlet port being spaced apart in a first direction, the vessel comprising an upper interior surface and a bottom, opposite interior surface, the upper surface being arranged to face the precursor contained in the vessel in use. The vessel is shaped such that a vertical distance between a top surface of the precursor and the upper interior surface of the vessel varies between the inlet and the outlet, having a minimum value at a point located between the inlet and the outlet in the first direction.

Abstract: In general, the various aspects of the technology of the present disclosure relate to semiconductor manufacturing apparatuses and processes which may comprise two or more accumulators connected in parallel to each other. The apparatus may have a solid-state precursor sublimator upstream from said two or more accumulators employed by the process.

Abstract: A solid source chemical vaporizer, an assembly of solid source chemical vaporizers, a substrate processing system comprising the solid source chemical vaporizer or the assembly and a method of forming a layer is disclosed. Embodiments of the presently described solid source chemical vaporizer comprise a vessel, a gas inlet, a gas outlet and a channel.

Abstract: A computer-implemented method, a system and computer programs products for assessing the credit worthiness of a user, the method comprising: collecting, by a data collector, information about communications conducted by users' of a communication network, the collected information at least comprising Call Detail Records including calls; analyzing, by a computing system, during a specific time frame, the collected information regarding a particular user including communications' started by the particular user and/or communications' received by the user, and determining, data variables from the analyzed information, the data variables including at least communication patterns; and computing, by the computing system, both a default risk score and a fraud risk score of the user by using the determined data variables.