Abstract: Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.

Abstract: Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.

Abstract: Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.

Abstract: Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.

Abstract: Methods, systems, and devices for a low resistance crosspoint architecture are described. A manufacturing system may deposit a thermal barrier material, followed by a first layer of a first conductive material, on a layered assembly including a patterned layer of electrode materials and a patterned layer of a memory material. The manufacturing system may etch a first area of the layered assembly to form a gap in the first layer of the first conductive material, the thermal barrier material, the patterned layer of the memory material, and the patterned layer of electrode materials. The manufacturing system may deposit a second conductive material to form a conductive via in the gap, where the conductive via extends to a height within the layered assembly that is above the thermal barrier material.

Abstract: Disclosed herein are embodiments of bio-lamina bioreactors and methods of making and using the same. The bio-lamina bioreactors disclosed herein can make fuels from organic reactants using fluid flow through the bio-lamina bioreactors in combination with microorganisms capable of reacting with the organic reactants. The microorganisms are embedded within biofilms present within the bio-lamina bioreactor. The bio-lamina bioreactor further comprises bio-lamina substrates comprising unique flow channels and structural projections that facilitate fluid flow and interactions with the microorganism cultures of the biofilm.

Abstract: A system for supplying vaporized precursor includes an enclosure including an output. A plurality of trays is arranged in a stacked, spaced configuration inside the enclosure. The plurality of trays is configured to hold liquid precursor. A first conduit fluidly connects a carrier gas supply to the enclosure and includes a plurality of openings. A first valve is arranged along the first conduit and is configured to selectively control delivery of the carrier gas from the carrier gas supply through the first conduit to the plurality of openings in the first conduit. The plurality of openings is configured to direct the carrier gas across the liquid precursor in the plurality of trays, respectively. The output of the enclosure provides a mixture of the carrier gas and the vaporized precursor.

Abstract: A system for supplying vaporized precursor includes an enclosure including an output. A plurality of trays is arranged in a stacked, spaced configuration inside the enclosure. The plurality of trays is configured to hold liquid precursor. A first conduit fluidly connects a carrier gas supply to the enclosure and includes a plurality of openings. A first valve is arranged along the first conduit and is configured to selectively control delivery of the carrier gas from the carrier gas supply through the first conduit to the plurality of openings in the first conduit. The plurality of openings is configured to direct the carrier gas across the liquid precursor in the plurality of trays, respectively. The output of the enclosure provides a mixture of the carrier gas and the vaporized precursor.