Abstract: A method, system, and motor vehicle for controlling a direct-current fast-charging process of a battery system are provided that significantly improves performance of the direct-current fast-charging process and minimizes condensation issues by utilizing lower coolant temperature for a short duration when a rechargeable energy storage system cell temperature is greater than a specific temperature threshold. The rechargeable energy storage system cell temperature, a rechargeable energy storage system state of charge a rechargeable energy storage system voltage, and a rechargeable energy storage system direct-current fast-charging current are utilized to determine when to utilize the lower coolant temperature when the rechargeable energy storage system cell temperature is greater than a specific temperature threshold instead of using a lower coolant temperature from the beginning of the direct-current fast-charging process.

Abstract: A method and system for conducting a non-contact survey of an overhead crane runway system using a survey apparatus that is alternately located in the crane bay or on a crane bridge girder. Disclosed more particularly are a method and system for testing an overhead crane runway beam 3D alignment or an overhead crane runway rail 3D alignment using a 3D laser scanner.

Abstract: A method and system for conducting a non-contact survey of an overhead crane runway system using a survey apparatus that is alternately located in the crane bay or on a crane bridge girder. Disclosed more particularly are a method and system for testing an overhead crane runway beam 3D alignment or an overhead crane runway rail 3D alignment using a 3D laser scanner.

Abstract: A method and system for conducting a non-contact survey of an overhead crane runway system using a survey apparatus that is alternately located in the crane bay or on a crane bridge girder. Disclosed more particularly are a method and system for testing an overhead crane runway beam 3D alignment or an overhead crane runway rail 3D alignment using a 3D laser scanner.

Abstract: A IIIA-VA group semi-conductor single crystal substrate (2) has one of or both of the following two properties: an oxygen content of 1.6×1016-5.6×1017 atoms/cm3 in a range from the surface to a depth of 10 ?m of the wafer, and an electron mobility of 4,800 cm2/V·s-5,850 cm2/V·s. Further, a method for preparing the semi-conductor single crystal substrate (2) comprises: placing a single crystal substrate (2) to be processed in a container (4); sealing said container (4), and keeping said single crystal substrate (2) to be processed at a temperature in the range of from the crystalline melting point ?240° C. to the crystalline melting point ?30° C. for 5 hours to 20 hours; preferably, keeping a gallium arsenide single crystal at a temperature of 1,000° C. to 1,200° C. for 5 hours to 20 hours.

Abstract: A method of controlling oxygen concentration in III-V compound semiconductor substrate comprises providing a plurality of III-V crystal substrates in a container, providing a predetermined amount of material in the container. Atoms of the predetermined amount of material having a high chemical reactivity with oxygen atoms. The method further comprises maintaining a predetermined pressure within the container and annealing the plurality of III-V crystal substrates to yield an oxygen concentration in the crystal substrates. The oxygen concentration is associated with the predetermined amount of material.

Abstract: An IIIA-VA group semi-conductor single crystal substrate (2) has one of or both of the following two properties: the content of oxygen in the range from the surface of the wafer to a depth of 10 ?m ranges from 1.6×1016 atoms/cm3 to 5.6×1017 atoms/cm3, and an electron mobility ranges from 4,800 cm2/V·S to 5,850 cm2/V·S. Further, a method for preparing the semi-conductor single crystal substrate (2) comprises: placing a to-be-processed single crystal substrate (2) in a container (4); sealing the container (4), and keeping the to-be-processed single crystal substrate (2) in a temperature range in which the crystalline melting point is from ?240° C. to ?30° C. for 5 hours to 20 hours; preferably, keeping a gallium arsenide single crystal at a temperature of 1,000° C. to 1,200° C. for 5 hours to 20 hours.

Abstract: An apparatus and method of treating multiple wafers to reduce the density of impurities as well as to improve the uniformity of substrate electrical characteristics without any thermal stress. The wafers are chemically treated, and heat treated in a sealed reaction tube under arsenic overpressure with a controlled thermal profile to heat the wafers. The thermal profile controls temperature of different zones inside of a furnace containing the sealed reaction tube. Impurities of the wafers are dissolved, and are out-diffused from the inner portions to the outer portions of the wafers.