Abstract: The present disclosure relates to automatic heat-transfer press machines and systems configured to transfer printed patterns from a carrier film onto garments. Various embodiments are described, including single-station, dual-platen, multi-station, and continuous conveyor configurations. The machines may include automated film feeding, edge and print-edge alignment systems, vacuum garment retention, programmable temperature and pressure control, and selectable hot, warm, or cold peel cycles. Certain embodiments may incorporate vision-based or AI-powered alignment systems that automatically correct garment or film misalignment in real time. Other embodiments include forced-air cooling to accelerate peel readiness and integrated sensors for monitoring actual garment temperature and pressure uniformity.

Abstract: The present application provides a battery diaphragm, including: a porous substrate and an adhesive layer formed on the side of the porous substrate. The adhesive layer includes a polymer material with an adhesive property. The adhesive layer has a coating coefficient C. The coating coefficient C is equal to a ratio of the adhesive strength A of the adhesive layer to a value P of an increase in gas permeability per unit coating thickness of the adhesive layer. A relation C=A/P is satisfied. The coating coefficient C has a ratio in a range of 0.3<C<1. The adhesive strength A of the adhesive layer has a unit of N/m. The value P of the increase in the gas permeability per unit coating thickness of the adhesive layer has a unit of s/100 cc/?m.

Abstract: The present application provides a battery diaphragm, including: a porous substrate and an adhesive layer formed on the side of the porous substrate. The adhesive layer includes a polymer material with an adhesive property. The adhesive layer has a coating coefficient C. The coating coefficient C is equal to a ratio of the adhesive strength A of the adhesive layer to a value P of an increase in gas permeability per unit coating thickness of the adhesive layer. A relation C=A/P is satisfied. The coating coefficient C has a ratio in a range of 0.3<C<1. The adhesive strength A of the adhesive layer has a unit of N/m. The value P of the increase in the gas permeability per unit coating thickness of the adhesive layer has a unit of s/100 cc/?m.

Abstract: A heat press device is provided that includes a support structure, a first platen and a heating element assembly that includes a heating element and a second platen. The heat press device further includes a movement assembly configured to change a pressure state between the first platen and the second platen when the heat press device is in a closed configuration. The heat press device can also include an indicator that is configured to convey the pressure state between the first platen and the second platen when the heat press device is in the closed configuration.

Abstract: A three-dimensional (3D) model generation method includes obtaining, based on a missing region of an initial 3D model of a target object, a camera pose sequence for performing photographing on the target object, where the initial 3D model is obtained by performing 3D modeling based on a first image sequence, and the first image sequence is obtained by performing photographing around the target object; obtaining a second image sequence, where the second image sequence is an image sequence obtained by performing photographing on the target object based on the camera pose sequence; and filling the missing region of the initial 3D model based on the second image sequence to generate a target 3D model.

Abstract: A heat press device is provided that includes a support structure, a first platen and a heating element assembly that includes a heating element and a second platen. The heat press device further includes a movement assembly configured to change a pressure state between the first platen and the second platen when the heat press device is in a closed configuration. The heat press device can also include an indicator that is configured to convey the pressure state between the first platen and the second platen when the heat press device is in the closed configuration.

Abstract: The present disclosure provides an RF catheter controlling system and an RF catheter controlling method. The system includes: a logic control unit configured to receive a target command, and generate a control signal in accordance with the target command, the target command being used to indicate a target mode of an RF catheter, the control signal carrying information about at least one RF parameter corresponding to the target mode; and an RF generation module in communication with the logic control unit and configured to control the RF catheter to operate in the target mode in accordance with the information about the at least one RF parameter corresponding to the target mode.

Abstract: The present disclosure provides an RF catheter, including: a catheter body; and at least one heating unit and at least one electrode fixedly coupled to the catheter body. The at least one heating unit is configured to perform ablation on a target tissue in a superficial vein, the at least one electrode is configured to perform ablation on a target issue in a perforating vein, each of the heating unit and the electrode is in a corresponding target operating mode in accordance with an operating mode command for the RF catheter, and the target operating modes include a first operating mode where the electrode operates, a second operating mode where at least two heating units operate, and a third operating mode where merely one heating unit operates.

Abstract: A heat press device is provided that includes a support structure, a first platen and a heating element assembly that includes a heating element and a second platen. The heat press device further includes a movement assembly configured to change a pressure state between the first platen and the second platen when the heat press device is in a closed configuration. The heat press device can also include an indicator that is configured to convey the pressure state between the first platen and the second platen when the heat press device is in the closed configuration.

Abstract: A heat press device is provided that includes a support structure, a first platen and a heating element assembly that includes a heating element and a second platen. The heat press device further includes a movement assembly configured to change a pressure state between the first platen and the second platen when the heat press device is in a closed configuration. The heat press device can also include an indicator that is configured to convey the pressure state between the first platen and the second platen when the heat press device is in the closed configuration.

Abstract: A heat press device is provided that includes a support structure, a first platen and a heating element assembly that includes a heating element and a second platen. The heat press device further includes a movement assembly configured to change a pressure state between the first platen and the second platen when the heat press device is in a closed configuration. The heat press device can also include an indicator that is configured to convey the pressure state between the first platen and the second platen when the heat press device is in the closed configuration.

Abstract: A heat press device is provided that includes a support structure, a first platen and a heating element assembly that includes a heating element and a second platen. The heat press device further includes a movement assembly configured to change a pressure state between the first platen and the second platen when the heat press device is in a closed configuration. The heat press device can also include an indicator that is configured to convey the pressure state between the first platen and the second platen when the heat press device is in the closed configuration.

Abstract: A heat press device is provided that includes a support structure, a first platen and a heating element assembly that includes a heating element and a second platen. The heat press device further includes a movement assembly configured to change a pressure state between the first platen and the second platen when the heat press device is in a closed configuration. The heat press device can also include an indicator that is configured to convey the pressure state between the first platen and the second platen when the heat press device is in the closed configuration.

Abstract: It is provided a method of converting a diaryl ether source such as lignin and/or polyphenylene oxide (PPO) containing 4-O-5 linkages and an inorganic chemical such as ammonia into an organic compound, comprising reacting said diaryl ether source with the inorganic chemical in presence of a catalyst, preferably palladium, transforming the 4-O-5 linkages of said diaryl ether source into the organic compound. It is provided a palladium-catalyzed synthesis of aniline derivatives from 4-O-5 linkage lignin model compounds and cheap industrial inorganic chemical ammonia via dual C(Ar)—O bond cleavage.

Abstract: The position adjusting indicator device for manual heat press machine, comprising a pedestal, and there is a fixed or sliding base plate on the upper plane pedestal, there assembles heating element on the upper plane of the base plate. The middle of the rear end of the pedestal connects to the rack, and on the middle of the rack installs the housing. A handle can be assembled on the near side of the housing; An arm can be assembled with position adjusting indicator device components below the handle. And the arm is installed on the heating element, one side of the arm is fixedly connected with the rack. The up and down of heating element is controlled by adjusting position indicator device in order to achieve accurate pressure. The heat press device utilizes manual position adjusting pressure to achieve accurate position and better transfer effect, which avoid the disadvantages that the traditional heat press machine can not accurately adjust the position and save adjusting position time.

Abstract: In a semiconductor device, an edge termination region which surrounds an active region includes an electric field reduction mechanism including guard rings, first field plates which come into contact with the guard rings, and second field plates which are provided on the first field plates, with an interlayer insulating film interposed therebetween. The second field plate is thicker than the first field plate. A gap between the second field plates is greater than a gap between the first field plates. A barrier metal film is provided between the second field plate and the interlayer insulating film so as come into conductive contact with the second field plate. A gap between the barrier metal films is equal to the gap between the first field plates.

Abstract: In a semiconductor device, an edge termination region which surrounds an active region includes an electric field reduction mechanism including guard rings, first field plates which come into contact with the guard rings, and second field plates which are provided on the first field plates, with an interlayer insulating film interposed therebetween. The second field plate is thicker than the first field plate. A gap between the second field plates is greater than a gap between the first field plates. A barrier metal film is provided between the second field plate and the interlayer insulating film so as come into conductive contact with the second field plate. A gap between the barrier metal films is equal to the gap between the first field plates.

Abstract: A semiconductor device is disclosed that has enhanced its electric charge resistance. A first parallel p-n layer is disposed in an element activating part, and a second parallel p-n layer is disposed in an element peripheral edge part. An n? surface area is disposed between the second parallel p-n layer and a first principal face. Two or more p-type guard ring areas are disposed so as to be separate from each other on the first principal face side of the n? surface area. First field plate electrodes and second field plate electrodes are electrically connected to p-type guard ring areas. Second field plate electrodes cover the first field plate electrodes adjacent to each other so as to cover the first principal face between the first field plate electrodes through a second insulating film.

Abstract: Semiconductor regions are alternately arranged in a parallel pn layer in which an n-type region and a p-type region are alternately arranged parallel to the main surface of a semiconductor substrate. Pitch between n drift region and p partition region of a second parallel pn layer in an edge termination region is two thirds of pitch between n drift region and p partition region of a first parallel pn layer in an active region. At boundaries between main SJ cells and fine SJ cells at four corners of the semiconductor substrate having rectangular shape in plan view, ends of two pitches of main SJ cells face the ends of three pitches of fine SJ cells. In this way, it is possible to reduce the influence of a process variation and thus reduce mutual diffusion between n drift region and p partition region of the fine SJ cell.