Abstract: The present disclosure includes an all-nitride-based epitaxial and chip structure and a light-emitting device. The epitaxial and chip structure includes an N-type semiconductor layer, a P-type semiconductor layer, an electroluminescent (EL) multiple quantum wells (MQWs) region, and a first photoluminescent (PL) multiple quantum wells (MQWs) region stacked on a main surface of a substrate. The EL MQWs region generates a first-color light by an EL method and the first-color light is further transmitted to the first PL MQWs region or/and the second PL MQWs region where the second-color light or/and the third-color light are generated by a PL method. The present disclosure provides an EL MQWs region to generate the first-color light, and also provides a first, a second or more PL MQWs regions to further convert the first-color light into the second, the third or more-color lights which allow RGB or multiple colors emission.

Abstract: A needling device includes: a needling assembly, a support, a base and a bearing frame. The base is provided inside the bearing frame, and the base is for bearing the preform body. The support is provided with a guide rail. The needling assembly is slidably connected to the support, and may slide along the guide rail, to needle the preform body. The needling assembly may perform an all-around needling operation to the circular-arc surface of the preform body, and depth and density of the needling by the needling assembly to the circular-arc surface of the preform body are even, which may prevent deformation and layering of the preform body during the deposition, to improve the processing quality of the preform body.