Abstract: Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process are described. For example, an integrated circuit structure includes a fin or nanowire. A gate stack is over the fin or nanowire. The gate stack includes a gate dielectric and a gate electrode. A first dielectric spacer is along a first side of the gate stack, and a second dielectric spacer is along a second side of the gate stack. The first and second dielectric spacers are over at least a portion of the fin or nanowire. An insulating material is vertically between and in contact with the portion of the fin or nanowire and the first and second dielectric spacers. A first epitaxial source or drain structure is at the first side of the gate stack, and a second epitaxial source or drain structure is at the second side of the gate stack.

Abstract: Self-aligned gate endcap (SAGE) architectures with gate-all-around devices, and methods of fabricating self-aligned gate endcap (SAGE) architectures with gate-all-around devices, are described. In an example, an integrated circuit structure includes a semiconductor fin above a substrate and having a length in a first direction. A nanowire is over the semiconductor fin. A gate structure is over the nanowire and the semiconductor fin, the gate structure having a first end opposite a second end in a second direction, orthogonal to the first direction. A pair of gate endcap isolation structures is included, where a first of the pair of gate endcap isolation structures is spaced equally from a first side of the semiconductor fin as a second of the pair of gate endcap isolation structures is spaced from a second side of the semiconductor fin.

Abstract: Non-planar integrated circuit structures having mitigated source or drain etch from replacement gate process are described. For example, an integrated circuit structure includes a fin or nanowire. A gate stack is over the fin or nanowire. The gate stack includes a gate dielectric and a gate electrode. A first dielectric spacer is along a first side of the gate stack, and a second dielectric spacer is along a second side of the gate stack. The first and second dielectric spacers are over at least a portion of the fin or nanowire. An insulating material is vertically between and in contact with the portion of the fin or nanowire and the first and second dielectric spacers. A first epitaxial source or drain structure is at the first side of the gate stack, and a second epitaxial source or drain structure is at the second side of the gate stack.

Abstract: Gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with a dipole layer are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, the first gate stack a PMOS gate stack having a P-type conductive layer on a first gate dielectric including a first N-type dipole material layer. A second gate stack is over the second vertical arrangement of horizontal nanowires, the second gate stack an NMOS gate stack having the P-type conductive layer on a second gate dielectric including the first N-type dipole material layer and a second N-type dipole material layer.

Abstract: Self-aligned gate endcap (SAGE) architectures with gate-all-around devices, and methods of fabricating self-aligned gate endcap (SAGE) architectures with gate-all-around devices, are described. In an example, an integrated circuit structure includes a semiconductor fin above a substrate and having a length in a first direction. A nanowire is over the semiconductor fin. A gate structure is over the nanowire and the semiconductor fin, the gate structure having a first end opposite a second end in a second direction, orthogonal to the first direction. A pair of gate endcap isolation structures is included, where a first of the pair of gate endcap isolation structures is spaced equally from a first side of the semiconductor fin as a second of the pair of gate endcap isolation structures is spaced from a second side of the semiconductor fin.

Abstract: Gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with differentiated dipole layers are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A P-type gate stack is over the first vertical arrangement of horizontal nanowires, the P-type gate stack having a mid-gap to P-type conductive layer over a first gate dielectric including a high-k dielectric layer and a first dipole material layer. An N-type gate stack is over the second vertical arrangement of horizontal nanowires, the N-type gate stack having the mid-gap to P-type conductive layer over a second gate dielectric including the high-k dielectric layer and a second dipole material layer, the second dipole layer different than the first dipole material layer.

Abstract: Gate-all-around integrated circuit structures having dual metal gates and gate dielectrics with a single polarity dipole layer are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A P-type gate stack is over the first vertical arrangement of horizontal nanowires, the P-type gate stack having a P-type conductive layer over a first gate dielectric including a high-k dielectric layer and a dipole material layer. An N-type gate stack is over the second vertical arrangement of horizontal nanowires, the N-type gate stack having a mid-gap conductive layer over a second gate dielectric including the high-k dielectric layer and the dipole material layer.

Abstract: Gate-all-around integrated circuit structures having vertically discrete source or drain structures, and methods of fabricating gate-all-around integrated circuit structures having vertically discrete source or drain structures, are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack is around the vertical arrangement of horizontal nanowires. A first epitaxial source or drain structure is at a first end of the vertical arrangement of horizontal nanowires, the first epitaxial source or drain structure including vertically discrete portions aligned with the vertical arrangement of horizontal nanowires. A second epitaxial source or drain structure is at a first end of the vertical arrangement of horizontal nanowires, the second epitaxial source or drain structure including vertically discrete portions aligned with the vertical arrangement of horizontal nanowires.

Abstract: Techniques are provided herein to form semiconductor devices having different work function metals over different devices. The techniques can be used in any number of integrated circuit applications and are particularly useful with respect to gate-all-around (GAA) transistors. In an example, neighboring semiconductor devices each include a different work function to act as the device gate electrode for each semiconductor device. More specifically, a first semiconductor device may be a p-channel GAA transistor with a first work function metal around the various nanoribbons of the transistor, while the second neighboring semiconductor device may be an n-channel GAA transistor with a second work function metal around the various nanoribbons of the transistor. No portions of the first work function metal are present around the nanoribbons of the second semiconductor device and no portions of the second work function metal are present around the nanoribbons of the first semiconductor device.

Abstract: An integrated circuit structure comprises a first and second vertical arrangement of horizontal nanowires in a PMOS region and in an NMOS region. A first gate stack having a P-type conductive layer surrounds the first vertical arrangement of horizontal nanowires. A second gate stack surrounds the second vertical arrangement of horizontal nanowires. In one embodiment, the second gate stack has an N-type conductive layer, the P-type conductive layer is over the second gate stack, and an N-type conductive fill is between N-type conductive layer and the P-type conductive layer to provide same polarity metal filled gates. In another embodiment, the second gate stack has an N-type conductive layer comprising Titanium (Ti) and “Nitrogen (N) having a low saturation thickness of 3-3.5 nm surrounding the nanowires, and the N-type conductive layer is covered by the P-type conductive layer.

Abstract: Gate-all-around integrated circuit structures having vertically discrete source or drain structures, and methods of fabricating gate-all-around integrated circuit structures having vertically discrete source or drain structures, are described. For example, an integrated circuit structure includes a vertical arrangement of horizontal nanowires. A gate stack is around the vertical arrangement of horizontal nanowires. A first epitaxial source or drain structure is at a first end of the vertical arrangement of horizontal nanowires, the first epitaxial source or drain structure including vertically discrete portions aligned with the vertical arrangement of horizontal nanowires. A second epitaxial source or drain structure is at a first end of the vertical arrangement of horizontal nanowires, the second epitaxial source or drain structure including vertically discrete portions aligned with the vertical arrangement of horizontal nanowires.

Abstract: An apparatus is provided which comprises: a first region over a substrate, wherein the first region comprises a first semiconductor material having a L-valley transport energy band structure, a second region in contact with the first region at a junction, wherein the second region comprises a second semiconductor material having a X-valley transport energy band structure, wherein a <111> crystal direction of one or more crystals of the first and second semiconductor materials are substantially orthogonal to the junction, and a metal adjacent to the second region, the metal conductively coupled to the first region through the junction. Other embodiments are also disclosed and claimed.

Abstract: Integrated circuit structures including increased transistor source/drain (S/D) contact area using a sacrificial S/D layer are provided herein. The sacrificial layer, which includes different material from the S/D material, is deposited into the S/D trenches prior to the epitaxial growth of that S/D material, such that the sacrificial layer acts as a space-holder below the S/D material. During S/D contact processing, the sacrificial layer can be selectively etched relative to the S/D material to at least partially remove it, leaving space below the S/D material for the contact metal to fill. In some cases, the contact metal is also between portions of the S/D material. In some cases, the contact metal wraps around the epi S/D, such as when dielectric wall structures on either side of the S/D region are employed. By increasing the S/D contact area, the contact resistance is reduced, thereby improving the performance of the transistor device.

Abstract: Self-aligned gate endcap (SAGE) architectures with gate-all-around devices, and methods of fabricating self-aligned gate endcap (SAGE) architectures with gate-all-around devices, are described. In an example, an integrated circuit structure includes a semiconductor fin above a substrate and having a length in a first direction. A nanowire is over the semiconductor fin. A gate structure is over the nanowire and the semiconductor fin, the gate structure having a first end opposite a second end in a second direction, orthogonal to the first direction. A pair of gate endcap isolation structures is included, where a first of the pair of gate endcap isolation structures is spaced equally from a first side of the semiconductor fin as a second of the pair of gate endcap isolation structures is spaced from a second side of the semiconductor fin.

Abstract: Gate-all-around integrated circuit structures having molybdenum nitride metal gates and gate dielectrics with a dipole layer are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer on a first gate dielectric. The P-type conductive layer includes molybdenum and nitrogen. A second gate stack is over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer on a second gate dielectric.

Abstract: Gate-all-around integrated circuit structures having additive metal gates and gate dielectrics with a dipole layer are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer over a first gate dielectric including a high-k dielectric layer on a first dipole material layer. A second gate stack is over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer over a second gate dielectric including the high-k dielectric layer on a second dipole material layer.

Abstract: Gate-all-around integrated circuit structures having common metal gates and having gate dielectrics with a dipole layer are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, the first gate stack a PMOS gate stack having a P-type conductive layer on a first gate dielectric including a high-k dielectric layer on a first dipole material layer. A second gate stack is over the second vertical arrangement of horizontal nanowires, the second gate stack an NMOS gate stack having the P-type conductive layer on a second gate dielectric including the high-k dielectric layer on a second dipole material layer.

Abstract: Gate-all-around integrated circuit structures having additive metal gates are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires, and a second vertical arrangement of horizontal nanowires. A first gate stack is over the first vertical arrangement of horizontal nanowires, the first gate stack having a P-type conductive layer with a first portion surrounding the nanowires of the first vertical arrangement of horizontal nanowires and a second portion extending laterally beside and spaced apart from the first portion. A second gate stack is over the second vertical arrangement of horizontal nanowires, the second gate stack having an N-type conductive layer with a first portion surrounding the nanowires of the second vertical arrangement of horizontal nanowires and a second portion adjacent to and in contact with the second portion of the P-type conductive layer.

Abstract: Self-aligned gate endcap (SAGE) architectures with gate-all-around devices, and methods of fabricating self-aligned gate endcap (SAGE) architectures with gate-all-around devices, are described. In an example, an integrated circuit structure includes a semiconductor fin above a substrate and having a length in a first direction. A nanowire is over the semiconductor fin. A gate structure is over the nanowire and the semiconductor fin, the gate structure having a first end opposite a second end in a second direction, orthogonal to the first direction. A pair of gate endcap isolation structures is included, where a first of the pair of gate endcap isolation structures is spaced equally from a first side of the semiconductor fin as a second of the pair of gate endcap isolation structures is spaced from a second side of the semiconductor fin.

Abstract: Gate-all-around integrated circuit structures having low aspect ratio isolation structures and subfins, and method of fabricating gate-all-around integrated circuit structures having low aspect ratio isolation structures and subfins, are described. For example, an integrated circuit structure includes a first vertical arrangement of horizontal nanowires above a first subfin. A second vertical arrangement of horizontal nanowires is above a second subfin laterally adjacent the first subfin. An isolation structure is laterally between the first subfin and the second subfin, the isolation structure having a maximum height and a maximum width with a maximum height to maximum width ratio of less than 3:1.