Patents by Inventor Dazhong Chen
Dazhong Chen has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240429349Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.Type: ApplicationFiled: August 30, 2024Publication date: December 26, 2024Inventors: Su-hui LIN, Feng WANG, Ling-yuan HONG, Sheng-Hsien HSU, Sihe CHEN, Dazhong CHEN, Kang-Wei PENG, Chia-Hung CHANG
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Publication number: 20240413291Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.Type: ApplicationFiled: August 21, 2024Publication date: December 12, 2024Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Su-Hui Lin, Lingyuan Hong, SHENG-HSIEN HSU, Sihe CHEN, Dazhong CHEN, Gong CHEN, CHIA-HUNG CHANG, KANG-WEI PENG
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Publication number: 20240322075Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.Type: ApplicationFiled: June 3, 2024Publication date: September 26, 2024Inventors: Ling-Yuan HONG, Qing WANG, Dazhong CHEN, Quanyang MA, Su-Hui LIN, Chung-Ying CHANG
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Patent number: 12087885Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.Type: GrantFiled: November 15, 2022Date of Patent: September 10, 2024Assignee: Quanzhou San'an Semiconductor Technology Co., Ltd.Inventors: Su-hui Lin, Feng Wang, Ling-yuan Hong, Sheng-Hsien Hsu, Sihe Chen, Dazhong Chen, Kang-Wei Peng, Chia-Hung Chang
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Patent number: 12021166Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.Type: GrantFiled: November 18, 2021Date of Patent: June 25, 2024Assignee: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.Inventors: Ling-Yuan Hong, Qing Wang, Dazhong Chen, Quanyang Ma, Su-Hui Lin, Chung-Ying Chang
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Publication number: 20240079541Abstract: Provided are an LED chip and a light emitting device, which include a light emitting epitaxial layer, a first insulating layer covering the light emitting epitaxial layer, and a first pad and a second pad located on the first insulating layer. Each of the first pad and the second pad includes a stress buffer layer, a nickel metal layer, and a protective layer. The stress buffer layer includes aluminum metal layers; and by adjusting the thickness distribution of the aluminum metal layers, an aluminum metal layer closest to the nickel metal layer is set to be the thickest, and the aluminum metal layers are thickened, especially the thickness of the aluminum metal layer closest to the nickel metal layer is greater than or equal to the thickness of the nickel metal layer, therefore, the ductility and tensile property of aluminum metal are utilized to play a role in stress buffering.Type: ApplicationFiled: September 5, 2023Publication date: March 7, 2024Inventors: Baojun SHI, Jin XU, Dazhong CHEN, Shuijie WANG, Ke LIU, Qiang WANG, Meijian WU
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Publication number: 20240063336Abstract: A flip-chip light emitting diode includes an epitaxial structure, a first electrode, and a second electrode. The epitaxial structure includes a first semiconductor layer, a light emitting layer, and a second semiconductor layer. The light emitting layer is located between the first semiconductor layer and the second semiconductor layer. The first electrode is located on the epitaxial structure and is electrically connected to the first semiconductor layer. The second electrode is located on the epitaxial structure and is electrically connected to the second semiconductor layer. The first electrode and/or the second electrode is a multilayer metal structure. The multilayer metal structure includes a metal reflective layer, a first barrier layer, and a conductive metal layer stacked in sequence on the first semiconductor layer. A thickest layer in the multilayer metal structure is the conductive metal layer, and the conductive metal layer is an Al layer.Type: ApplicationFiled: July 5, 2023Publication date: February 22, 2024Applicant: Quanzhou sanan semiconductor technology Co., Ltd.Inventors: Baojun SHI, Jin XU, Dazhong CHEN, Shuijie WANG, Ke LIU, Qiang WANG, Meijian WU
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Patent number: 11862752Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.Type: GrantFiled: July 2, 2021Date of Patent: January 2, 2024Assignee: Quanzhou San'an Semiconductor Technology Co., Ltd.Inventors: Qing Wang, Dazhong Chen, Sheng-Hsien Hsu, Ling-yuan Hong, Kang-Wei Peng, Su-hui Lin, Chia-Hung Chang
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Publication number: 20230178689Abstract: A semiconductor light-emitting device includes a semiconductor light-emitting stack and an insulating light-transmissive layer. The semiconductor light-emitting stack includes an active layer and has a light-emitting surface. The insulating light-transmissive layer is disposed on the light-emitting surface and includes a base and a grade index structure. The base has a first refractive index. The grade index structure is disposed on the base in a way that the base is disposed between the semiconductor light-emitting stack and the graded index structure. The graded index structure includes at least two films and has a gradually varying refractive index which gradually decrease in a direction away from the base, and which is greater than the first refractive index. A light-emitting apparatus including the semiconductor light-emitting device and a sealing resin is also provided.Type: ApplicationFiled: February 3, 2023Publication date: June 8, 2023Inventors: Qing WANG, Quanyang MA, Dazhong CHEN, Gong CHEN, Ling-yuan HONG, Kang-Wei PENG, Su-hui LIN
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Publication number: 20230076695Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.Type: ApplicationFiled: November 15, 2022Publication date: March 9, 2023Inventors: Su-hui LIN, Feng WANG, Ling-yuan HONG, Sheng-Hsien HSU, Sihe CHEN, Dazhong CHEN, Kang-Wei PENG, Chia-Hung CHANG
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Publication number: 20230052304Abstract: A light-emitting device includes a substrate and an epitaxial unit. The substrate has a first and a second surface. The substrate is formed on the first surface with a plurality of protrusions. The epitaxial unit includes a first semiconductor layer, an active layer, and a second semiconductor layer that are sequentially disposed on the first surface of the substrate. The first surface of the substrate has a first area that is not covered by the epitaxial unit, and a second area this is covered by the epitaxial unit. A height difference (h2) between the first area and the second area is no greater than 1 ?m. A display apparatus and a lighting apparatus are also disclosed.Type: ApplicationFiled: August 11, 2022Publication date: February 16, 2023Inventors: BAOJUN SHI, JIN XU, SHIWEI LIU, DAZHONG CHEN, SHUIJIE WANG, KE LIU, CHUNG-YING CHANG, WEN-CHIA HUANG, YU-TSAI TENG
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Publication number: 20230024758Abstract: A light-emitting device includes a semiconductor light-emitting stack and a distributed Bragg reflector (DBR) structure. The semiconductor light-emitting stack includes a light-emitting layer. The DBR structure is disposed on the semiconductor light-emitting stack and includes a plurality of first dielectric material layers and a plurality of second dielectric material layers that are alternately stacked on the semiconductor light-emitting stack. The first dielectric material layer has a first refractive index, and the second dielectric material layer has a second refractive index. The first refractive index is lower than the second refractive index. The second dielectric material layer has an optical thickness that is smaller than that of the first dielectric material layer.Type: ApplicationFiled: September 29, 2022Publication date: January 26, 2023Inventors: Qing WANG, Quanyang MA, Jiangbin ZENG, Dazhong CHEN, Ling-Yuan HONG, Kang-Wei PENG, Su-Hui LIN
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Publication number: 20230014850Abstract: A flip light-emitting diode (LED) and a semiconductor light-emitting device are provided. The flip-chip LED includes a substrate, a semiconductor stacking layer formed on a first surface of the substrate for radiating light, and an optical thin film stacking layer formed on a second surface of the substrate and including a first reflective film group. The first reflective film group includes a first material layer and a second material layer repeatedly stacked. Optical thicknesses of the first and second material layers meet: the first reflective film group reflects a light with a wavelength in a range from 420 nm to 480 nm and at an incident angle being a first angle, and partially transmits a light with the wavelength and at an incident angle being a second angle, and the first angle is smaller than the second angle. The brightness of the flip-chip LED can be improved.Type: ApplicationFiled: June 29, 2022Publication date: January 19, 2023Inventors: QING WANG, MINYOU HE, JIANGBIN ZENG, SHIWEI LIU, JIN XU, XIAOLIANG LIU, ZHANGGEN XIA, LINGYUAN HONG, BAOJUN SHI, SHUIJIE WANG, KE LIU, DAZHONG CHEN, CHUNGYING CHANG
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Publication number: 20230007967Abstract: A light emitting diode device includes a substrate having a substrate surface, an epitaxial structure having an epitaxial surface opposite to the substrate surface, and a plurality of bridging electrodes disposed on the epitaxial surface. The epitaxial structure includes first, second and third light emitting units spacedly and sequentially disposed on the substrate surface. A projection of the second light emitting unit has a first edge and a second edge that is connected with and perpendicular to the first edge. The epitaxial surface has an operating zone on the second light emitting unit that is adapted to be pushed by an ejector pin. A length of the second edge is equal to or greater than a diameter of the operating zone.Type: ApplicationFiled: July 11, 2022Publication date: January 12, 2023Inventors: SHIWEI LIU, DAZHONG CHEN, JIN XU, BAOJUN SHI, SHUIJIE WANG, KE LIU, QIANG WANG, YU-TSAI TENG, WEN-CHIA HUANG, CHUNG-YING CHANG
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Patent number: 11532769Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.Type: GrantFiled: July 16, 2020Date of Patent: December 20, 2022Assignee: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Su-hui Lin, Feng Wang, Ling-yuan Hong, Sheng-Hsien Hsu, Sihe Chen, Dazhong Chen, Kang-Wei Peng, Chia-Hung Chang
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Publication number: 20220209048Abstract: A light-emitting device includes a substrate, multiple light-emitting units that are disposed on the substrate, that are spaced apart by an isolation trench and that are and electrically interconnected by an interconnecting structure, and an insulating layer with thickness of 200 nm to 450 nm. A potential difference between adjacent two light-emitting units not in direct electrical connection is at least two times forward voltage of each of the light-emitting units. Each light-emitting unit includes a light-emitting stack and a light-transmissible current spreading layer. The insulating layer covers the light-transmissible current spreading layers and at least a part of the light-emitting stacks.Type: ApplicationFiled: November 18, 2021Publication date: June 30, 2022Applicant: XIAMEN SAN'AN OPTOELECTRONICS CO., LTD.Inventors: Ling-Yuan HONG, Qing WANG, Dazhong CHEN, Quanyang MA, Su-Hui LIN, Chung-Ying CHANG
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Publication number: 20210336080Abstract: A light-emitting diode includes a substrate, a distributed Bragg reflector (DBR) structure and a semiconductor layered structure. The DBR structure is disposed on the substrate. The semiconductor layered structure is disposed on the DBR structure opposite to the substrate, and is configured to emit a light having a first wavelength. The DBR structure has a reflectance of not greater than 30% for the light having the first wavelength, and a reflectance of not smaller than 50% for a laser beam having a second wavelength that is different from the first wavelength.Type: ApplicationFiled: July 2, 2021Publication date: October 28, 2021Inventors: Qing WANG, Dazhong CHEN, Sheng-Hsien HSU, Ling-yuan HONG, Kang-Wei PENG, Si-hui LIN, Chia-Hung CHANG
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Publication number: 20210280743Abstract: A light-emitting diode (LED) includes a transmissible substrate, an epitaxial layered structure, a distributed Bragg reflector (DBR) structure, a first electrode, and a second electrode. The epitaxial layered structure is disposed on the transmissible substrate. The DBR structure is disposed on the epitaxial layered structure opposite to the transmissible substrate. The DBR structure has at least one first through hole and at least one second through hole, and is formed with a plurality of voids. The first electrode and the second electrode are electrically connected to the first semiconductor layer and the second semiconductor layer, respectively. An LED packaged module including the LED is also disclosed.Type: ApplicationFiled: May 21, 2021Publication date: September 9, 2021Inventors: QING WANG, QUANYANG MA, DAZHONG CHEN, LING-YUAN HONG, KANG-WEI PENG, SU-HUI LIN
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Publication number: 20200350467Abstract: Disclosed is a light-emitting diode which includes a light-emitting epitaxial layered unit, an insulation layer, a transparent conductive layer, a protective layer, a first electrode, and a second electrode. The light-emitting epitaxial layered unit includes a first semiconductor layer, a second semiconductor layer, and a light-emitting layer sandwiched between the first and second semiconductor layers, and has a first electrode region which includes a pad area and an extension area. The insulation layer is disposed on the first semiconductor layer and at the extension area of the first electrode region. Also disclosed is a method for manufacturing the light-emitting diode.Type: ApplicationFiled: July 16, 2020Publication date: November 5, 2020Inventors: Su-hui LIN, Feng WANG, Ling-yuan HONG, Sheng-Hsien HSU, Sihe CHEN, Dazhong CHEN, Kang-Wei PENG, Chia-Hung CHANG
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Publication number: 20190115511Abstract: A light-emitting diode includes a first semiconductor layer, a light-emitting layer and a second semiconductor layer, having an upper surface providing a first electrode area containing a pad area and an extended area; a transparent conductive layer over the first semiconductor layer having a first opening to expose a portion of a surface of the first semiconductor layer corresponding to the pad area; a protective layer over the transparent conductive layer having a second opening and a third opening respectively at positions corresponding to the pad area and the extended area, while exposing a portion of the surface of the first semiconductor layer corresponding to the pad area and a portion of a surface of the transparent conductive layer corresponding to the extended area; and a first electrode over the protective layer directly contacting the first semiconductor layer corresponding to the pad area via the first and second openings.Type: ApplicationFiled: September 29, 2018Publication date: April 18, 2019Applicant: XIAMEN SANAN OPTOELECTRONICS TECHNOLOGY CO., LTD.Inventors: Su-Hui Lin, Lingyuan Hong, SHENG-HSIEN HSU, Sihe CHEN, Dazhong CHEN, Gong CHEN, CHIA-HUNG CHANG, KANG-WEI PENG