Abstract: A semiconductor package structure includes a first redistribution layer, a second redistribution layer and an interconnecting structure. The first redistribution layer has a first surface and a second surface opposite to each other. The second redistribution layer is disposed over the first surface of the first redistribution layer, wherein the second redistribution layer has a third surface and a fourth surface opposite to each other, and the third surface facing the first surface. The interconnecting structure is disposed between and electrically connected to the first redistribution layer and the second redistribution layer, wherein the interconnecting structure comprises a conductive post and a conductive bump stacked to each other.

Abstract: A semiconductor package structure includes a first redistribution layer, a second redistribution layer and an interconnecting structure. The first redistribution layer has a first surface and a second surface opposite to each other. The second redistribution layer is disposed over the first surface of the first redistribution layer, wherein the second redistribution layer has a third surface and a fourth surface opposite to each other, and the third surface facing the first surface. The interconnecting structure is disposed between and electrically connected to the first redistribution layer and the second redistribution layer, wherein the interconnecting structure comprises a conductive post and a conductive bump stacked to each other.

Abstract: A semiconductor package structure includes a first redistribution layer, a second redistribution layer and an interconnecting structure. The first redistribution layer has a first surface and a second surface opposite to each other. The second redistribution layer is disposed over the first surface of the first redistribution layer, wherein the second redistribution layer has a third surface and a fourth surface opposite to each other, and the third surface facing the first surface. The interconnecting structure is disposed between and electrically connected to the first redistribution layer and the second redistribution layer, wherein the interconnecting structure comprises a conductive post and a conductive bump stacked to each other.

Abstract: A method of fabricating a semiconductor structure includes: forming a conductive layer on a first insulating layer; etching a portion of the conductive layer to expose a portion of the first insulating layer; deforming a surface of the portion of the first insulating layer to form a rough surface of the first insulating layer; and removing a residue of the conductive layer on the rough surface of the first insulating layer.

Abstract: A semiconductor package structure includes a first redistribution layer, a second redistribution layer and an interconnecting structure. The first redistribution layer has a first surface and a second surface opposite to each other. The second redistribution layer is disposed over the first surface of the first redistribution layer, wherein the second redistribution layer has a third surface and a fourth surface opposite to each other, and the third surface facing the first surface. The interconnecting structure is disposed between and electrically connected to the first redistribution layer and the second redistribution layer, wherein the interconnecting structure comprises a conductive post and a conductive bump stacked to each other.

Abstract: A semiconductor package structure includes a redistribution layer (RDL), a chip, a plurality of interconnecting bumps and an encapsulant. The redistribution layer has a first surface and a second surface opposite to each other. The chip is disposed over the redistribution layer with a plurality of contact pads facing the first surface and electrically connected to the redistribution layer. The interconnecting bumps are disposed over the first surface and electrically connected to the redistribution layer. The encapsulant is disposed over the first surface of the redistribution layer, and the encapsulant encloses the chip and surrounds lateral walls of the interconnecting bumps.

Abstract: A semiconductor package structure includes a redistribution layer (RDL), a chip, a plurality of interconnecting bumps and an encapsulant. The redistribution layer has a first surface and a second surface opposite to each other. The chip is disposed over the redistribution layer with a plurality of contact pads facing the first surface and electrically connected to the redistribution layer. The interconnecting bumps are disposed over the first surface and electrically connected to the redistribution layer. The encapsulant is disposed over the first surface of the redistribution layer, and the encapsulant encloses the chip and surrounds lateral walls of the interconnecting bumps.

Abstract: A method of fabricating a semiconductor structure includes: forming a conductive layer on a first insulating layer; etching a portion of the conductive layer to expose a portion of the first insulating layer; deforming a surface of the portion of the first insulating layer to form a rough surface of the first insulating layer; and removing a residue of the conductive layer on the rough surface of the first insulating layer.