Abstract: The present disclosure, in some embodiments, relates to a method of developing a photosensitive material. The method includes forming a photosensitive material over a substrate. The photosensitive material is exposed to electromagnetic radiation focused at a plurality of different heights over the substrate. The plurality of different heights are vertically separated from one another and are disposed within the photosensitive material along a vertical path that extends in a direction perpendicular to an upper surface of the photosensitive material. The photosensitive material is developed to remove a soluble region.

Abstract: The present disclosure, in some embodiments, relates to a method of developing a photosensitive material. The method includes forming a photosensitive material over a substrate. The photosensitive material is exposed to electromagnetic radiation focused at a plurality of different heights over the substrate. The plurality of different heights are vertically separated from one another and are disposed within the photosensitive material along a vertical path that extends in a direction perpendicular to an upper surface of the photosensitive material. The photosensitive material is developed to remove a soluble region.

Abstract: The present disclosure, in some embodiments, relates to a photolithography tool. The photolithography tool includes a source configured to generate electromagnetic radiation. A dynamic focal system is configured to provide the electromagnetic radiation to a plurality of different vertical positions over a substrate stage. The plurality of different vertical positions include a first position having a first depth of focus and a second position having a second depth of focus that is below the first depth of focus and that vertically overlaps the first depth of focus.

Abstract: The present disclosure, in some embodiments, relates to a photolithography tool. The photolithography tool includes a source configured to generate electromagnetic radiation. A dynamic focal system is configured to provide the electromagnetic radiation to a plurality of different vertical positions over a substrate stage. The plurality of different vertical positions include a first position having a first depth of focus and a second position having a second depth of focus that is below the first depth of focus and that vertically overlaps the first depth of focus.

Abstract: The present disclosure, in some embodiments, relates to a method of performing a photolithography process. The method includes forming a photosensitive material over a substantially flat upper surface of a substrate. The substantially flat upper surface of the substrate extends between opposing sides of the substrate. The photosensitive material is exposed to electromagnetic radiation at a plurality of depths of focus that are centered at different heights over the substrate. The photosensitive material is developed to remove a part of the photosensitive material.

Abstract: The present disclosure, in some embodiments, relates to a method of performing a photolithography process. The method includes forming a photosensitive material over a substantially flat upper surface of a substrate. The substantially flat upper surface of the substrate extends between opposing sides of the substrate. The photosensitive material is exposed to electromagnetic radiation at a plurality of depths of focus that are centered at different heights over the substrate. The photosensitive material is developed to remove a part of the photosensitive material.

Abstract: The present disclosure, in some embodiments, relates to a photolithography tool. The photolithography tool includes an illumination source configured to generate electromagnetic radiation and projection optics configured to focus the electromagnetic radiation onto a photosensitive material overlying a substrate according to a pattern on a photomask. A dynamic focal element is configured to dynamically change positions at which the electromagnetic radiation is focused over the substrate during exposure of the photosensitive material. The positions at which the electromagnetic radiation is focused define a plurality of depths of focus. The plurality of depths of focus respectively span a different spatial region within the photosensitive material that is smaller than a thickness of the photosensitive material.

Abstract: The present disclosure relates to a dynamic lithographic exposure method, and an associated apparatus, which exposes a photosensitive material over a plurality of depths of focus respectively spanning a different region of the photosensitive material. By exposing the photosensitive material over a plurality of depths of focus, the exposure of the photosensitive material is improved resulting in a larger lithographic process window. In some embodiments, the dynamic lithographic exposure method is performed by forming a photosensitive material over a substrate. The photosensitive material is exposed to electromagnetic radiation at a plurality of depths of focus that respectively span a different region within the photosensitive material. Exposing the photosensitive material to the electromagnetic radiation modifies a solubility of an exposed region within the photosensitive material. The photosensitive material is then developed to remove the soluble region.

Abstract: The present disclosure, in some embodiments, relates to a photolithography tool. The photolithography tool includes an illumination source configured to generate electromagnetic radiation and projection optics configured to focus the electromagnetic radiation onto a photosensitive material overlying a substrate according to a pattern on a photomask. A dynamic focal element is configured to dynamically change positions at which the electromagnetic radiation is focused over the substrate during exposure of the photosensitive material. The positions at which the electromagnetic radiation is focused define a plurality of depths of focus.

Abstract: A method for aligning a semiconductor wafer is provided. The method includes providing the semiconductor wafer having two alignment marks formed on an active region or on an edge region of the semiconductor wafer. An included angle that is formed between the two alignment marks in a circumferential direction of the semiconductor wafer is between about 12 degrees and about 36 degrees. The method further includes receiving the detection signal reflected from at least one of the first alignment mark and the second alignment mark. The method also includes determining a parameter by a control system based on the received detection signal and moving the semiconductor wafer according to the parameter.

Abstract: The present disclosure relates to a dynamic lithographic exposure method, and an associated apparatus, which exposes a photosensitive material over a plurality of depths of focus respectively spanning a different region of the photosensitive material. By exposing the photosensitive material over a plurality of depths of focus, the exposure of the photosensitive material is improved resulting in a larger lithographic process window. In some embodiments, the dynamic lithographic exposure method is performed by forming a photosensitive material over a substrate. The photosensitive material is exposed to electromagnetic radiation at a plurality of depths of focus that respectively span a different region within the photosensitive material. Exposing the photosensitive material to the electromagnetic radiation modifies a solubility of an exposed region within the photosensitive material. The photosensitive material is then developed to remove the soluble region.

Abstract: A method for aligning a semiconductor wafer is provided. The method includes providing the semiconductor wafer having two alignment marks formed on an active region or on an edge region of the semiconductor wafer. An included angle that is formed between the two alignment marks in a circumferential direction of the semiconductor wafer is between about 12 degrees and about 36 degrees. The method further includes receiving the detection signal reflected from at least one of the first alignment mark and the second alignment mark. The method also includes determining a parameter by a control system based on the received detection signal and moving the semiconductor wafer according to the parameter.

Abstract: A semiconductor wafer is provided. The semiconductor wafer includes a base layer having an active region and an edge region. A number of semiconductor devices is formed on the active region. The semiconductor wafer also includes a wafer identification. The wafer identification is formed on the edge region and used for identifying the semiconductor wafer. The semiconductor wafer further includes an alignment mark. The alignment mark is formed on the edge region and is used for performing an alignment process of the semiconductor wafer.

Abstract: In accordance with some embodiments, a method and an apparatus for baking photoresist patterns are provided. The method includes putting a wafer over a heating assembly. A photoresist pattern is formed over a top surface of the wafer. The method further includes curing the wafer from the top surface of the wafer by a curing assembly while heating the wafer from a bottom surface of the wafer by a heating assembly.

Abstract: A semiconductor wafer is provided. The semiconductor wafer includes a base layer having an active region and an edge region. A number of semiconductor devices is formed on the active region. The semiconductor wafer also includes a wafer identification. The wafer identification is formed on the edge region and used for identifying the semiconductor wafer. The semiconductor wafer further includes an alignment mark. The alignment mark is formed on the edge region and is used for performing an alignment process of the semiconductor wafer.

Abstract: In accordance with some embodiments, a method and an apparatus for baking photoresist patterns are provided. The method includes putting a wafer over a heating assembly. A photoresist pattern is formed over a top surface of the wafer. The method further includes curing the wafer from the top surface of the wafer by a curing assembly while heating the wafer from a bottom surface of the wafer by a heating assembly.

Abstract: A method including forming alignment marks in an upper surface of a semiconductor wafer; selectively depositing a mask over the alignment marks leaving portions of the upper surface exposed; depositing an epitaxial layer over the exposed portions of the upper surface; and thereafter removing the mask.

Abstract: A method including forming alignment marks in an upper surface of a semiconductor wafer; selectively depositing a mask over the alignment marks leaving portions of the upper surface exposed; depositing an epitaxial layer over the exposed portions of the upper surface; and thereafter removing the mask.