Abstract: An electronic device with component detaching function includes a casing, a cover and an electronic component. An opening is formed on the casing. The cover is adapted to shelter the opening. The cover is movably disposed on the casing close to the opening, and can move relative to the casing to be switched between a first position and a second portion. The cover includes a first connecting portion. The electronic component including a second connecting portion is detachably disposed on the opening. The second connecting portion is detachably assembled with the first connecting portion. When the electronic component is separated from the casing, the electronic component utilizes an assembly of the first connecting portion and the second connecting portion to slide the cover relative to the casing, and the cover moves from the first position to the second portion.

Abstract: A gas exhaust control method applied to a respiratory assistance apparatus includes the following steps of: applying gas to a face mask of the respiratory assistance apparatus; detecting a pressure in the face mask; when the pressure in the face mask is lower than a preset pressure range, shrinking a perforation size of an exhaust structure of the face mask by a driving unit of the respiratory assistance apparatus; and when the pressure in the face mask is higher than the preset pressure range, expanding the perforation size of the exhaust structure of the face mask by the driving unit. A respiratory assistance apparatus applied with the gas exhaust control method is also disclosed.

Abstract: The present invention discloses a protective cover mechanism for protecting a socket of an electronic device. The protective cover mechanism includes a base and a fluid restrictor. The base is disposed on the socket for covering the socket. The fluid restrictor is installed on the base and is for blocking airflow on a side of the socket, so as to guide the airflow to a neighboring electronic component.

Abstract: A spraying module includes a spraying element, a first covering element and a second covering element. The spraying element includes a first electrode and a second electrode. The first covering element has two depressions and is disposed on one side of the spraying element, and the first electrode and the second electrode are disposed in the two depressions respectively. The second covering element includes two protrusions and is disposed on the other side of the spraying element, and the two protrusions cover the first electrode and the second electrode respectively. The first covering element and the second covering element are made by compliant material.

Abstract: An electronic device with component detaching function includes a casing, a cover and an electronic component. An opening is formed on the casing. The cover is adapted to shelter the opening. The cover is movably disposed on the casing close to the opening, and can move relative to the casing to be switched between a first position and a second portion. The cover includes a first connecting portion. The electronic component including a second connecting portion is detachably disposed on the opening. The second connecting portion is detachably assembled with the first connecting portion. When the electronic component is separated from the casing, the electronic component utilizes an assembly of the first connecting portion and the second connecting portion to slide the cover relative to the casing, and the cover moves from the first position to the second portion.

Abstract: A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. A stacked structure including a gate oxide layer, a floating gate and a first spacer is formed on the substrate in the cell area and a resistor is formed on the substrate in the periphery area. At least two doped regions are formed in the substrate beside the stacked structure. A dielectric material layer and a conductive material layer are sequentially formed on the substrate. A patterned photoresist layer is formed on the substrate to cover the stacked structure and a portion of the resistor. The dielectric material layer and the conductive material layer not covered by the patterned photoresist layer are removed, so as to form an inter-gate dielectric layer and a control gate on the stacked structure, and simultaneously form a salicide block layer on the resistor.

Abstract: A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. A stacked structure including a gate oxide layer, a floating gate and a first spacer is formed on the substrate in the cell area and a resistor is formed on the substrate in the periphery area. At least two doped regions are formed in the substrate beside the stacked structure. A dielectric material layer and a conductive material layer are sequentially formed on the substrate. A patterned photoresist layer is formed on the substrate to cover the stacked structure and a portion of the resistor. The dielectric material layer and the conductive material layer not covered by the patterned photoresist layer are removed, so as to form an inter-gate dielectric layer and a control gate on the stacked structure, and simultaneously form a salicide block layer on the resistor.

Abstract: A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. A stacked structure including a gate oxide layer, a floating gate and a first spacer is formed on the substrate in the cell area and a resistor is formed on the substrate in the periphery area. At least two doped regions are formed in the substrate beside the stacked structure. A dielectric material layer and a conductive material layer are sequentially formed on the substrate. A patterned photoresist layer is formed on the substrate to cover the stacked structure and a portion of the resistor. The dielectric material layer and the conductive material layer not covered by the patterned photoresist layer are removed, so as to form an inter-gate dielectric layer and a control gate on the stacked structure, and simultaneously form a salicide block layer on the resistor.

Abstract: A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. An oxide material layer and a first conductive material layer are sequentially formed on the substrate in the cell and periphery areas. A patterning step is performed to form first and second stacked structures on the substrate respectively in the cell and periphery areas. First and second spacers are formed respectively on sidewalls of the first and second stacked structures. At least two first doped regions are formed in the substrate beside the first stacked structure, and two second doped regions are formed in the substrate beside the second stacked structure. A dielectric layer and a second conductive layer are formed at least on the first stacked structure. The first stacked structure, the dielectric layer, and the second conductive layer in the cell area constitute a charge storage structure.

Abstract: The present invention discloses a protective cover mechanism for protecting a socket of an electronic device. The protective cover mechanism includes a base and a fluid restrictor. The base is disposed on the socket for covering the socket. The fluid restrictor is installed on the base and is for blocking airflow on a side of the socket, so as to guide the airflow to a neighboring electronic component.

Abstract: The present invention is a method for preparing a biocontrol formulation by the following steps. A Streptomyces bacterium is selected simultaneously with superior sporulation ability, chitinase activity and antagonistic effectiveness against plant fungal pathogens by culturing with fungal pathogens, wherein the selected Streptomyces bacterium is cultured on a chitin-limited plate to assess the ability of sporulation and chitinase activity, and the Streptomyces bacterium with superior sporulation ability is the strain with producing powder-like and maturity form spore chains. Spores from the selected bacterium is collected. The obtained spores are taken as a seed inoculum. Then the seed inoculum is cultured to directly yield a broth medium containing at least 109 viable spores/ml which the spores contained in the broth medium are well suspended. The biocontrol formulation is obtained. The present invention further provided a biocontrol formulation containing a high concentration of Streptomyces spp. spores.

Abstract: A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. An oxide material layer and a first conductive material layer are sequentially formed on the substrate in the cell and periphery areas. A patterning step is performed to form first and second stacked structures on the substrate respectively in the cell and periphery areas. First and second spacers are formed respectively on sidewalls of the first and second stacked structures. At least two first doped regions are formed in the substrate beside the first stacked structure, and two second doped regions are formed in the substrate beside the second stacked structure. A dielectric layer and a second conductive layer are formed at least on the first stacked structure. The first stacked structure, the dielectric layer, and the second conductive layer in the cell area constitute a charge storage structure.

Abstract: A sensing device includes: a semiconductor layer of a field effect semiconductor having upper and lower surfaces; a conductive layer formed on the lower surface of the semiconductor layer; and a sensor layer of an insulator formed on the upper surface of the semiconductor layer. The insulator is made from lanthanide-titanium oxide.

Abstract: A junction box for a solar module is disclosed and comprises a housing having an opening for introducing a plurality of conductor strips; and an electrical connection mechanism disposed in a receptacle of the housing. The electrical connection mechanism comprises a plurality of conductor strip connection devices disposed on an inner surface of the housing for connecting to the conductor strips; and a current-path arrangement module detachably connected with the conductor strip connection devices and comprising a carrier, a plurality of electricity conveying elements and a plurality of electronic components, wherein the electricity conveying elements and the electronic components are disposed on one surface of the carrier, and each electronic component is connected with two adjacent electricity conveying elements.

Abstract: A device and method are provided for metered dispensing of granular seasoning material. The device comprises a reservoir including a dispensing outlet, a metered dispensing member having an axis and a metering chamber comprising a peripheral cavity in the metered dispensing member, the metered dispensing member mounted for axial linear movement relative to the reservoir through the dispensing outlet to and from a filling position, in which the metering chamber is in communication with the interior of the reservoir, and a dispensing position, in which the metering chamber is in communication with the exterior of the reservoir, to permit gravity dispensing of a metered quantity of material from the metering chamber. Preferably, an actuation assembly for movement of the dispensing member comprises biasing means. A diffuser may be connected to the exterior of the reservoir below the dispensing outlet for evenly distributing dispensed material onto a target area.

Abstract: A method of forming a semiconductor structure is provided. A substrate having a cell area and a periphery area is provided. A stacked structure including a gate oxide layer, a floating gate and a first spacer is formed on the substrate in the cell area and a resistor is formed on the substrate in the periphery area. At least two doped regions are formed in the substrate beside the stacked structure. A dielectric material layer and a conductive material layer are sequentially formed on the substrate. A patterned photoresist layer is formed on the substrate to cover the stacked structure and a portion of the resistor. The dielectric material layer and the conductive material layer not covered by the patterned photoresist layer are removed, so as to form an inter-gate dielectric layer and a control gate on the stacked structure, and simultaneously form a salicide block layer on the resistor.

Abstract: An exemplary zinc oxide nano-wire based actuator includes a first electrode, a second electrode opposite to the first electrode, and a zinc oxide nano-wire layer sandwiched between the first electrode and the second electrode. The zinc oxide nano-wire layer includes two opposite surfaces in contact with the first and the second electrodes respectively, and a plurality of zinc oxide nano-wires substantially parallel to each other. The first electrode and the second electrode are configured for cooperatively creating therebetween an electric field with an electric field direction substantially parallel to the zinc oxide nano-wires so as to adjust a thickness of the zinc oxide nano-wire layer, thereby moving the second electrode relative to the first electrode.

Abstract: A junction box includes a casing, plural wire-connecting elements, plural power converting units, a first conductive element and a second conductive element. The casing includes an entrance, a first power output terminal and a second power output terminal. The plural wire pairs are introduced into the casing through the entrance. The plural wire-connecting elements are disposed within the casing and connected with corresponding wire pairs. The plural power converting units are detachably connected with corresponding wire-connecting elements. The power converting units include respective first conductive parts and respective second conductive parts. The first conductive element is connected with the first conductive parts of the power converting units and the first power output terminal. The second conductive element is connected with the second conductive parts of the power converting units and the second power output terminal.

Abstract: The present invention provides a connecting piping assembly with limiter, including a first connecting piping and a second connecting piping. The first connecting piping contains a first coupling end, a first assembly portion and a first flow channel. The second connecting piping contains a second coupling end, a second assembly portion and a second flow channel. The first and second assembly portions can be mated and positioned so that the first and second flow channels are interconnected. A locating part is provided with a polygonal through-hole, which can be slidably sleeved on the perimeter of the first and second assembly portions, such that the polygonal through-hole is mated with the perimeter of the first and second assembly portions. The locating part is positioned via a locator.