Patents by Inventor DE JUN BAO

DE JUN BAO has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • CMOS image sensor and fabrication method thereof
    Patent number: 9947709
    Abstract: A method to form a stacked CMOS image sensor includes forming a signal processing layer including a plurality of discrete signal processing circuit, an image sensor layer including a plurality of discrete image sensing units, and an intermediate capacitor layer including a dielectric layer and a plurality of capacitors. Each capacitor includes a first electrode, a V-shaped or U-shaped first electrode material layer electrically connecting to the first electrode, a second electrode material layer on the first electrode material layer having the dielectric layer there-between, and a second electrode electrically connecting to the second electrode material layer. The method further includes bonding the signal processing layer to the intermediate capacitor layer with each second electrode electrically connected to a signal processing circuit, and bonding the image sensor layer to the intermediate capacitor layer with each first electrode electrically connected to an image sensing unit.
    Type: Grant
    Filed: October 4, 2016
    Date of Patent: April 17, 2018
    Assignees: SEMICONDUCTOR MANUFACTURING INTERNATIONAL (SHANGHAI) CORPORATION, SEMICONDUCTOR MANUFACTURING INTERNATIONAL (BEIJING) CORPORATION
    Inventors: Herb He Huang, Clifford Ian Drowley, Guan Qie Gao, De Jun Bao
  • CMOS IMAGE SENSOR AND FABRICATION METHOD THEREOF
    Publication number: 20170170224
    Abstract: A method to form a stacked CMOS image sensor includes forming a signal processing layer including a plurality of discrete signal processing circuit, an image sensor layer including a plurality of discrete image sensing units, and an intermediate capacitor layer including a dielectric layer and a plurality of capacitors. Each capacitor includes a first electrode, a V-shaped or U-shaped first electrode material layer electrically connecting to the first electrode, a second electrode material layer on the first electrode material layer having the dielectric layer there-between, and a second electrode electrically connecting to the second electrode material layer. The method further includes bonding the signal processing layer to the intermediate capacitor layer with each second electrode electrically connected to a signal processing circuit, and bonding the image sensor layer to the intermediate capacitor layer with each first electrode electrically connected to an image sensing unit.
    Type: Application
    Filed: October 4, 2016
    Publication date: June 15, 2017
    Inventors: HERB HE HUANG, CLIFFORD IAN DROWLEY, GUAN QIE GAO, DE JUN BAO