Abstract: A method for fabricating a boron-comprising ink is provided. The method includes providing an inorganic boron-comprising material, combining the inorganic boron-comprising material with a polar solvent having a boiling point in a range of from about 50° C. to about 250° C., and combining the inorganic boron-comprising material with a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6.

Abstract: Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks are provided. A boron-comprising ink comprises boron from or of a boron-comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 ?m, and a boron concentration in a range of from about 1×1019 to 1×1020 atoms/cm3.

Abstract: Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents.

Abstract: Boron-comprising inks for forming boron-doped regions in semiconductor substrates using non-contact printing processes and methods for fabricating such boron-comprising inks are provided. A boron-comprising ink comprises boron from or of a boron-comprising material and a spread-minimizing additive that results in a spreading factor of the boron-comprising ink in a range of from about 1.5 to about 6. The boron-comprising ink has a viscosity in a range of from about 1.5 to about 50 centipoise and, when deposited on a semiconductor substrate, provides a post-anneal sheet resistance in a range of from about 10 to about 100 ohms/square, a post-anneal doping depth in a range of from about 0.1 to about 1 ?m, and a boron concentration in a range of from about 1×1019 to 1×1020 atoms/cm3.

Abstract: Methods for forming doped regions in a semiconductor material that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material and methods for fabricating semiconductor devices that minimize or eliminate vapor diffusion of a dopant element and/or dopant from a deposited dopant and/or into a semiconductor material are provided. In one exemplary embodiment, a method for forming doped regions in a semiconductor material comprises depositing a conductivity-determining type dopant comprising a dopant element overlying a first portion of the semiconductor material. A diffusion barrier material is applied such that it overlies a second portion of the semiconductor material. The dopant element of the conductivity-determining type dopant is diffused into the first portion of the semiconductor material.

Abstract: Methods for forming doped regions in semiconductor substrates using non-contact printing processes and dopant-comprising inks for forming such doped regions using non-contact printing processes are provided. In an exemplary embodiment, a method for forming doped regions in a semiconductor substrate is provided. The method comprises providing an ink comprising a conductivity-determining type dopant, applying the ink to the semiconductor substrate using a non-contact printing process, and subjecting the semiconductor substrate to a thermal treatment such that the conductivity-determining type dopant diffuses into the semiconductor substrate.

Abstract: A method for forming a substantially transparent nanoporous organosilicate film on a substantially transparent substrate, for use in optical lighting devices such as organic light emitting diodes (OLEDs). The method includes first preparing a composition comprising a silicon containing pre-polymer, a porogen, and a catalyst. The composition is coated onto a substrate which is substantially transparent to visible light, forming a film thereon. The film is then gelled by crosslinking and cured by heating, such that the resulting cured film is substantially transparent to visible light. It is preferred that both the substrate and the nanoporous film are at least 98% transparent to visible light. Optical devices which include the resulting structures of this invention exhibit improved light extraction and illuminance where the nanoporous organosilicate film has a low refractive index in the range of 1.05 to 1.4, serving as an impedance matching layer in such devices.

Abstract: Thermal interface materials are disclosed that include at least one matrix material component, at least one high conductivity filler component, at least one solder material; and at least one material modification agent, wherein the at least one material modification agent improves the thermal performance, compatibility, physical quality or a combination thereof of the thermal interface material. Methods of forming thermal interface materials are also disclosed that include providing each of the at least one matrix material component, at least one high conductivity filler, at least one solder material and at least one material modification agent, blending the components; and optionally curing the components pre- or post-application of the thermal interface material to the surface, substrate or component.

Abstract: The present invention is directed to resist and etching residue removing compositions containing at least one nucleophilic amine compound possessing reduction and oxidation potentials, a two-carbon atom linkage alkanolamine compound, and optionally water and/or one or more corrosion inhibitors. The compositions may be substantially free of hydroxylamine, polar organic solvents, water, corrosion inhibitors, or a combination thereof. The compositions are useful in processes for removing resists and etching residue from metal or metal alloy substrates or substrate layers used in micro-circuitry fabrication.

Abstract: A new cleaning chemistry based on bis-choline and tris-choline compounds, such as their hydroxides, is provided in order to address the removal of photoresist and flux while minimizing any etching of the substrate.

Abstract: Methods of repairing voids in a material are described herein that include: a) providing a material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c) chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents. Methods of carbon restoration in a material are also described that include: a) providing a carbon-deficient material having a plurality of reactive silanol groups; b) providing at least one reactive surface modification agent; and c)chemically capping at least some of the plurality of reactive silanol groups with the at least one of the reactive surface modification agents.

Abstract: The invention relates to the production of multilayered dielectric structures and to semiconductor devices and integrated circuits comprising these structures. The structures of the invention are prepared by adhering a porous dielectric layer to a substantially nonporous capping layer via an intermediate adhesion promoting dielectric layer. A multilayered dielectric structure is prepared which has a porous dielectric layer which has a porosity of about 10% or more; b) an adhesion promoting dielectric layer on the porous dielectric layer which has a porosity of about 10% or less; and a substantially nonporous capping layer on the adhesion promoting dielectric layer.

Abstract: The present invention relates to, inter alia, a composition for stripping photoresist from substrates comprising: about 5% to about 50% by weight of an alkyl substituted pyrrolidone, an alkyl substituted piperidone, or a mixture thereof, about 0.2% to about 20% of one or more alkanolamines, and about 50% to about 94% of a sulfoxide, sulfoxone, or mixture thereof. Advantageously, the composition can remove copper from a copper substrate at a rate of less than about 10 ? per minute when the substrate is immersed in the composition which is held at 70° C. for 30 minutes and rotated relative to the composition at about 200 revolutions per minute.

Abstract: The present invention is directed to resist and etching residue removing compositions containing at least one nucleophilic amine compound possessing reduction and oxidation potentials, a two-carbon atom linkage alkanolamine compound, and optionally water and/or one or more corrosion inhibitors. The compositions may be substantially free of hydroxylamine, polar organic solvents, water, corrosion inhibitors, or a combination thereof. The compositions are useful in processes for removing resists and etching residue from metal or metal alloy substrates or substrate layers used in micro-circuitry fabrication.

Abstract: A new cleaning chemistry based on bis-choline and tris-choline compounds, such as their hydroxides, is provided in order to address the removal of photoresist and flux while minimizing any etching of the substrate.

Abstract: The present invention provides gas layer formation material selected from the group consisting of acenaphthylene homopolymers; acenaphthylene copolymers; poly(arylene ether); polyamide; B-staged multifunctional acrylate/methacrylate; crosslinked styrene divinyl benzene polymers; and copolymers of styrene and divinyl benzene with maleimide or bis-maleimides. The formed gas layers are used in microchips and multichip modules.

Abstract: The present invention relates to, inter alia, a composition for stripping photoresist from substrates comprising: about 5% to about 50% by weight of an alkyl substituted pyrrolidone, an alkyl substituted piperidone, or a mixture thereof, about 0.2% to about 20% of one or more alkanolamines, and about 50% to about 94% of a sulfoxide, sulfoxone, or mixture thereof. Advantageously, the composition can remove copper from a copper substrate at a rate of less than about 10 Å per minute when the substrate is immersed in the composition which is held at 70° C. for 30 minutes and rotated relative to the composition at about 200 revolutions per minute.