Patents by Inventor De-Yang Chiou
De-Yang Chiou has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Publication number: 20240186258Abstract: Various embodiments of the present disclosure are directed towards a method for forming an integrated chip. An alignment process is performed on a first semiconductor workpiece and a second semiconductor workpiece by virtue of a plurality of workpiece pins. The first semiconductor workpiece is bonded to the second semiconductor workpiece. A shift value is determined between the first and second semiconductor workpieces by virtue of a first plurality of alignment marks on the first semiconductor workpiece and a second plurality of alignment marks on the second semiconductor workpiece. A layer of an integrated circuit (IC) structure is formed over the second semiconductor workpiece based at least in part on the shift value.Type: ApplicationFiled: January 24, 2024Publication date: June 6, 2024Inventors: Yeong-Jyh Lin, Ching I Li, De-Yang Chiou, Sz-Fan Chen, Han-Jui Hu, Ching-Hung Wang, Ru-Liang Lee, Chung-Yi Yu
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Publication number: 20240170323Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices.Type: ApplicationFiled: January 30, 2024Publication date: May 23, 2024Applicant: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Mrunal Abhijith KHADERBAD, Ko-Feng Chen, Zheng-Yong Liang, Chen-Han Wang, De-Yang Chiou, Yu-Yun Peng, Keng-Chu Lin
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Patent number: 11942447Abstract: The present disclosure describes a semiconductor structure having bonded wafers with storage layers and a method to bond wafers with storage layers. The semiconductor structure includes a first wafer including a first storage layer with carbon, a second wafer including a second storage layer with carbon, and a bonding layer interposed between the first and second wafers and in contact with the first and second storage layers.Type: GrantFiled: August 27, 2021Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: De-Yang Chiou, Fu-Ting Yen, Yu-Yun Peng, Keng-Chu Lin
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Patent number: 11942358Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices. The method includes forming, on a substrate, first and second fin structures with an opening in between, filling the opening with a flowable isolation material, treating the flowable isolation material with a plasma, and removing a portion of the plasma-treated flowable isolation material between the first and second fin structures.Type: GrantFiled: March 12, 2021Date of Patent: March 26, 2024Assignee: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Mrunal Abhijith Khaderbad, Ko-Feng Chen, Zheng-Yong Liang, Chen-Han Wang, De-Yang Chiou, Yu-Yun Peng, Keng-Chu Lin
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Publication number: 20240094464Abstract: A semiconductor-on-insulator (SOI) structure and a method for forming the SOI structure. The method includes forming a first dielectric layer on a first semiconductor layer. A second semiconductor layer is formed over an etch stop layer. A cleaning solution is provided to a first surface of the first dielectric layer. The first dielectric layer is bonded under the second semiconductor layer in an environment having a substantially low pressure. An index guiding layer may be formed over the second semiconductor layer. A third semiconductor layer is formed over the second semiconductor layer. A distance between a top of the third semiconductor layer and a bottom of the second semiconductor layer varies between a maximum distance and a minimum distance. A planarization process is performed on the third semiconductor layer to reduce the maximum distance.Type: ApplicationFiled: January 3, 2023Publication date: March 21, 2024Inventors: Eugene I-Chun Chen, Kuan-Liang Liu, De-Yang Chiou, Yung-Lung Lin, Chia-Shiung Tsai
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Patent number: 11916022Abstract: Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.Type: GrantFiled: June 7, 2022Date of Patent: February 27, 2024Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yeong-Jyh Lin, Ching I Li, De-Yang Chiou, Sz-Fan Chen, Han-Jui Hu, Ching-Hung Wang, Ru-Liang Lee, Chung-Yi Yu
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Publication number: 20230411141Abstract: A method for treating a semiconductor structure includes: forming the semiconductor structure which includes a carrier substrate, a device substrate, a semiconductor device formed on the device substrate, and a bonding layer formed to bond the semiconductor device with the carrier substrate, the device substrate having an upper surface which is faced upwardly, and which is opposite to the semiconductor device; and directing a chemical fluid to impinge the upper surface of the device substrate so as to remove an edge portion of the device substrate.Type: ApplicationFiled: June 16, 2022Publication date: December 21, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD.Inventors: Kenichi SANO, Chung-Liang CHENG, De-Yang CHIOU, Kuan-Liang LIU, Pinyen LIN
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Publication number: 20230387065Abstract: The present disclosure describes a semiconductor structure having bonded wafers with storage layers and a method to bond wafers with storage layers. The semiconductor structure includes a first wafer including a first storage layer with carbon, a second wafer including a second storage layer with carbon, and a bonding layer interposed between the first and second wafers and in contact with the first and second storage layers.Type: ApplicationFiled: August 10, 2023Publication date: November 30, 2023Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: De-Yang CHIOU, Yu-Yun Peng, Fu-Ting Yen, Keng-Chu Lin
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Publication number: 20230066183Abstract: A method of fabricating a semiconductor structure and the semiconductor structure are disclosed. The method uses high flow rate of an etchant and an optimized scan pattern, so that the obtained semiconductor structure is a device upside-down bonded to the carrier wafer without any silicon remaining and is ready for subsequent lithography process for back via contact.Type: ApplicationFiled: August 30, 2021Publication date: March 2, 2023Inventors: KENICHI SANO, CHUNG-LIANG CHENG, DE-YANG CHIOU, KUANLIANG LIU, PINYEN LIN
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Publication number: 20230062412Abstract: The present disclosure describes a semiconductor structure having bonded wafers with storage layers and a method to bond wafers with storage layers. The semiconductor structure includes a first wafer including a first storage layer with carbon, a second wafer including a second storage layer with carbon, and a bonding layer interposed between the first and second wafers and in contact with the first and second storage layers.Type: ApplicationFiled: August 27, 2021Publication date: March 2, 2023Applicant: TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD.Inventors: De-Yang CHIOU, Fu-Ting YEN, Yu-Yun PENG, Keng-Chu LIN
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Publication number: 20220415696Abstract: The present disclosure describes a method to form a bonded semiconductor structure. The method includes forming a first bonding layer on a first wafer, forming a debonding structure on a second wafer, forming a second bonding layer on the debonding structure, bonding the first and second wafers with the first and second bonding layers, and debonding the second wafer from the first wafer via the debonding structure. The debonding structure includes a first barrier layer, a second barrier layer, and a water-containing dielectric layer between the first and second barrier layers.Type: ApplicationFiled: March 23, 2022Publication date: December 29, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Wei-Ting YEH, Zheng Yong Liang, De-Yang Chiou, Yu-Yun Peng, Keng-Chu Lin
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Publication number: 20220328419Abstract: Various embodiments of the present disclosure are directed towards a semiconductor processing system including an overlay (OVL) shift measurement device. The OVL shift measurement device is configured to determine an OVL shift between a first wafer and a second wafer, where the second wafer overlies the first wafer. A photolithography device is configured to perform one or more photolithography processes on the second wafer. A controller is configured to perform an alignment process on the photolithography device according to the determined OVL shift. The photolithography device performs the one or more photolithography processes based on the OVL shift.Type: ApplicationFiled: June 7, 2022Publication date: October 13, 2022Inventors: Yeong-Jyh Lin, Ching I. Li, De-Yang Chiou, Sz-Fan Chen, Han-Jui Hu, Ching-Hung Wang, Ru-Liang Lee, Chung-Yi Yu
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Publication number: 20220293458Abstract: The present disclosure describes a method of forming low thermal budget dielectrics in semiconductor devices.Type: ApplicationFiled: March 12, 2021Publication date: September 15, 2022Applicant: Taiwan Semiconductor Manufacturing Co., Ltd.Inventors: Mrunal Abhijith Khaderbad, Ko-Feng Chen, Zheng Yong Liang, Chen-Han Wang, De-Yang Chiou, Yu-Yun Peng, Keng-Chu Lin
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Patent number: 11362038Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a plurality of upper alignment marks on a semiconductor wafer. A plurality of lower alignment marks is formed on a handle wafer and correspond to the upper alignment marks. The semiconductor wafer is bonded to the handle wafer such that centers of the upper alignment marks are laterally offset from centers of corresponding lower alignment marks. An overlay (OVL) shift is measured between the handle wafer and the semiconductor wafer by detecting the plurality of upper alignment marks and the plurality of lower alignment marks. A photolithography process is performed by a photolithography tool to partially form an integrated circuit (IC) structure over the semiconductor wafer. During the photolithography process the photolithography tool is compensatively aligned according to the OVL shift.Type: GrantFiled: October 5, 2020Date of Patent: June 14, 2022Assignee: Taiwan Semiconductor Manufacturing Company, Ltd.Inventors: Yeong-Jyh Lin, Ching I Li, De-Yang Chiou, Sz-Fan Chen, Han-Jui Hu, Ching-Hung Wang, Ru-Liang Lee, Chung-Yi Yu
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Publication number: 20210375781Abstract: Various embodiments of the present disclosure are directed towards a method for forming a semiconductor structure. The method includes forming a plurality of upper alignment marks on a semiconductor wafer. A plurality of lower alignment marks is formed on a handle wafer and correspond to the upper alignment marks. The semiconductor wafer is bonded to the handle wafer such that centers of the upper alignment marks are laterally offset from centers of corresponding lower alignment marks. An overlay (OVL) shift is measured between the handle wafer and the semiconductor wafer by detecting the plurality of upper alignment marks and the plurality of lower alignment marks. A photolithography process is performed by a photolithography tool to partially form an integrated circuit (IC) structure over the semiconductor wafer. During the photolithography process the photolithography tool is compensatively aligned according to the OVL shift.Type: ApplicationFiled: October 5, 2020Publication date: December 2, 2021Inventors: Yeong-Jyh Lin, Ching I Li, De-Yang Chiou, Sz-Fan Chen, Han-Jui Hu, Ching-Hung Wang, Ru-Liang Lee, Chung-Yi Yu
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Publication number: 20150284504Abstract: A synthesis method of a heterocyclic compound is disclosed. The synthesis method includes steps of: carrying out a McMurry coupling reaction on a first compound having a carbonyl group to form a second compound, wherein the second compound includes an alkyl group which is symmetrical to a symmetrical center, and carrying out a 6?-cyclization on the second compound to form a third compound.Type: ApplicationFiled: October 3, 2014Publication date: October 8, 2015Inventors: Yen-Ju Cheng, Sheng-Wen Cheng, De-Yang Chiou