Abstract: Technology for inspection for detecting a defect of a printed matter using machine logic informed by machine learning. Some embodiments of the present invention may include one, or more, of the following features: (i) generates defect datasets; (ii) generates defect libraries; (iii) uses the generated defect libraries for deep learning training; and (iv) uses machine learning to detect defects using computer code (for example, a *.jpg format file) corresponding to an image of a piece of printed matter instead of using a visual image (that is, an image of the type that is created when a person takes a picture using a traditional film camera).

Abstract: Systems and method are disclosed herein that relate to support for virtual Time-Sensitive Networking (TSN) bridge management, Quality of Service (QoS) mapping, and TSN related scheduling in a cellular communications system. In some embodiments, a method performed by one or more network nodes of a cellular communications system operating as a virtual TSN bridge of a TSN network comprises providing, to a controller associated with the TSN network, parameters that relate to capabilities of the virtual TSN bridge. The parameters that relate to the capabilities of the virtual TSN bridge comprise a first parameter that defines a clock accuracy of an entity in the cellular communications system that operates gating control for the virtual TSN bridge and a second parameter that informs the controller associated with the TSN network that the virtual TSN bridge or a particular egress port of the virtual TSN bridge is restricted to exclusive gating.

Abstract: A nuclear emergency multifunctional operation robot includes a base, a mechanical arm, a tool change-over device, and motion supporting devices. The base includes a pedestal, a mounting seat A, a mounting seat B, a mounting seat C, a rotation driving mechanism A, and a rotation driving mechanism B. The front end of the mechanical arm is connected to the mounting seat B; the tool change-over device includes a male connector and a female connector which are abutted with or separated from each other; and the motion supporting devices are used to drive the nuclear emergency multifunctional operation robot to move. The present disclosure has the advantages that the base can be integrated with various end tools, so that the operation robot conveniently changes over tools according to operation needs to conduct various types of operations.

Abstract: The present invention relates to a computer-implemented method for obscuring sensitive data. The method comprises: acquiring, by a processor, image data; extracting, by the processor, structured data from the image data, the structured data being sensitive data and having a defined functional format and a defined visual format; generating, by the processor, artificial data that is different from the structured data, the artificial data having the same functional format as the structured data; generating, by the processor, artificial image data based on the image data in which the structured data is replaced with the artificial data, the artificial data being based on the visual format of the structured data; and outputting, by the processor, the artificial image data.

Abstract: The present disclosure provides a mask device and a manufacturing method thereof, and an evaporation system. The mask device includes a frame, strip alignment plates and a strip support plate, hollow portions are provided in the strip alignment plates, and the strip alignment plates are fixed on the frame; the strip support plate and the strip alignment plates cross each other, a plurality of welding spots are provided on the surface of the strip support plate proximal to the frame, and are welded and fixed to the frame, and the plurality of welding spots are provided in the region of the strip support plate corresponding to the hollow portions.

Abstract: A manufacturing method of a semiconductor structure including the following steps is provided: forming a first metal layer on a substrate; forming an insulating layer on the first metal layer; forming an oxide semiconductor material layer on the insulating layer; performing an annealing treatment to the oxide semiconductor material layer; forming an etch stopping material layer on the oxide semiconductor material layer; forming a photoresist material layer on the etch stopping material layer and defining thereof with a half tone photomask to form a photoresist pattern; using the photoresist pattern as a mask, patterning the etch stopping material layer to form an etch stopping pattern, and patterning the oxide semiconductor material layer to form an oxide semiconductor layer; removing the photoresist pattern; using the etch stopping pattern as the mask, patterning the insulating layer; forming a second metal layer on the etch stopping pattern; and patterning the oxide semiconductor layer.

Abstract: A nuclear emergency multifunctional operation robot includes a base, a mechanical arm, a tool change-over device, and motion supporting devices. The base includes a pedestal, a mounting seat A, a mounting seat B, a mounting seat C, a rotation driving mechanism A, and a rotation driving mechanism B. The front end of the mechanical arm is connected to the mounting seat B; the tool change-over device includes a male connector and a female connector which are abutted with or separated from each other; and the motion supporting devices are used to drive the nuclear emergency multifunctional operation robot to move. The present disclosure has the advantages that the base can be integrated with various end tools, so that the operation robot conveniently changes over tools according to operation needs to conduct various types of operations.

Abstract: A manufacturing method of a semiconductor structure including the following steps is provided: forming a first metal layer on a substrate; forming an insulating layer on the first metal layer; forming an oxide semiconductor material layer on the insulating layer; performing an annealing treatment to the oxide semiconductor material layer; forming an etch stopping material layer on the oxide semiconductor material layer; forming a photoresist material layer on the etch stopping material layer and defining thereof with a half tone photomask to form a photoresist pattern; using the photoresist pattern as a mask, patterning the etch stopping material layer to form an etch stopping pattern, and patterning the oxide semiconductor material layer to form an oxide semiconductor layer; removing the photoresist pattern; using the etch stopping pattern as the mask, patterning the insulating layer; forming a second metal layer on the etch stopping pattern; and patterning the oxide semiconductor layer.

Abstract: A mask strip, comprising: a plurality of mask units (2) in a first direction; each of the mask units (2) comprising a mask region (3) and a non-mask region (11) surrounding the mask region (3), the non-mask region (11) comprising a side region (4) and an original stress concentration region (6) inside the side region (4); each of the mask units (2) further comprising a stress concentration structure, wherein the stress concentration structure is within a part of the side region (4) other than the original stress concentration region (6). Also discloses a mask plate and a method of fabricating a mask strip.

Abstract: A semiconductor structure disposed on a substrate including a first metal layer disposed on the substrate, a gate insulating layer disposed on the substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopping pattern disposed on the oxide semiconductor layer, and a second metal layer disposed on the etch stopping layer. The first metal layer includes a gate line. The gate insulating layer covers the gate line. Patterning of the oxide semiconductor layer defines an oxide semiconductor pattern. The second metal layer includes a source electrode and a drain electrode electrically connected to the oxide semiconductor pattern. The etch stopping layer is located between the second metal layer and the oxide semiconductor layer. The second metal layer includes a signal line disposed on the etch stopping layer and is electrically connected to the oxide semiconductor pattern. A manufacturing method of the semiconductor structure is also provided.

Abstract: A method and an electronic apparatus for displaying reference locations for locating ECG pads and a recording medium using the method are provided. In the method, a body image is retrieved and a skin area in accordance with a skin color in the body image is detected. A feature analysis is performed on the skin area to detect two physical nipples and obtain locations of the two physical nipples in the body image. The relative locations of a plurality of ECG pads to one or two nipples predefined by medical statistics are retrieved to compute reference locations of the ECG pads in the body image according to the locations of the two physical nipples. Finally, the body image is displayed on the display and the reference locations of the ECG pads in the displayed body image are indicated.

Abstract: The present disclosure relates to a mask sheet. The mask sheet includes a plurality of mask units. Each mask unit includes an evaporation effective area and a plurality of welding areas that are distributed around the evaporation effective area according to a preset rule. The distribution of the welding areas around the evaporation effective areas of the mask units at the edge of the mask sheet is consistent with the distribution of the welding areas around the evaporation effective areas of the mask units located in the inner region of the mask sheet.

Abstract: The embodiments of the present disclosure propose a device for inspecting a mask plate, a method for inspecting a mask plate, and a corresponding method for controlling light sources. The device includes: an image sensor configured to capture an image of the mask plate; and a plurality of light sources disposed on one side of the mask plate opposite to the image sensor, wherein at least one of the plurality of light sources is configure to emit light when the image sensor is capturing an image of a first region of the mask plate, and the at least one light source comprises light sources within a first range, wherein the first range corresponds to the first region and an orthographic projection of the image sensor on a light source plane falls within the first range.

Abstract: The present disclosure relates to a mask sheet. The mask sheet includes a plurality of mask units. Each mask unit includes an evaporation effective area and a plurality of welding areas that are distributed around the evaporation effective area according to a preset rule. The distribution of the welding areas around the evaporation effective areas of the mask units at the edge of the mask sheet is consistent with the distribution of the welding areas around the evaporation effective areas of the mask units located in the inner region of the mask sheet.

Abstract: The present disclosure provides a mask device and a manufacturing method thereof, and an evaporation system. The mask device includes a frame, strip alignment plates and a strip support plate, hollow portions are provided in the strip alignment plates, and the strip alignment plates are fixed on the frame; the strip support plate and the strip alignment plates cross each other, a plurality of welding spots are provided on the surface of the strip support plate proximal to the frame, and are welded and fixed to the frame, and the plurality of welding spots are provided in the region of the strip support plate corresponding to the hollow portions.

Abstract: A semiconductor structure disposed on a substrate including a first metal layer disposed on the substrate, a gate insulating layer disposed on the substrate, an oxide semiconductor layer disposed on the gate insulating layer, an etch stopping pattern disposed on the oxide semiconductor layer, and a second metal layer disposed on the etch stopping layer. The first metal layer includes a gate line. The gate insulating layer covers the gate line. Patterning of the oxide semiconductor layer defines an oxide semiconductor pattern. The second metal layer includes a source electrode and a drain electrode electrically connected to the oxide semiconductor pattern. The etch stopping layer is located between the second metal layer and the oxide semiconductor layer. The second metal layer includes a signal line disposed on the etch stopping layer and is electrically connected to the oxide semiconductor pattern. A manufacturing method of the semiconductor structure is also provided.

Abstract: A jointing device for metal mask plate welding includes a jointing device body. A height of the jointing device body is smaller than a welding height of a welding gun. The jointing device body has a through-hole corresponding to a welding area of a metal mask. A width of the through-hole is larger than a welding spot diameter of the welding gun. The jointing device body is used for jointing the metal mask to a metal mask receiving frame.

Abstract: The embodiments of the present disclosure propose a device for inspecting a mask plate, a method for inspecting a mask plate, and a corresponding method for controlling light sources. The device includes: an image sensor configured to capture an image of the mask plate; and a plurality of light sources disposed on one side of the mask plate opposite to the image sensor, wherein at least one of the plurality of light sources is configure to emit light when the image sensor is capturing an image of a first region of the mask plate, and the at least one light source comprises light sources within a first range, wherein the first range corresponds to the first region and an orthographic projection of the image sensor on a light source plane falls within the first range.