Patents by Inventor Dean Edward Probst

Dean Edward Probst has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of manufacture and structure for a trench transistor having a heavy body region
    Patent number: 8476133
    Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
    Type: Grant
    Filed: January 11, 2010
    Date of Patent: July 2, 2013
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Brian Sze-Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst
  • Method of Manufacturing a Trench Transistor Having a Heavy Body Region
    Publication number: 20100264487
    Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
    Type: Application
    Filed: April 7, 2010
    Publication date: October 21, 2010
    Inventors: Brian Sze-Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst
  • Method of manufacturing a trench transistor having a heavy body region
    Patent number: 7736978
    Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
    Type: Grant
    Filed: August 10, 2006
    Date of Patent: June 15, 2010
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Brian Sze-Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst
  • Method of Manufacturing a Trench Transistor Having a Heavy Body Region
    Publication number: 20100112767
    Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
    Type: Application
    Filed: January 11, 2010
    Publication date: May 6, 2010
    Inventors: Brian Sze-Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst
  • Method of Manufacturing a Trench Transistor Having a Heavy Body Region
    Publication number: 20090134458
    Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
    Type: Application
    Filed: December 5, 2008
    Publication date: May 28, 2009
    Inventors: Brian Sze-Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst
  • Method of manufacturing a trench transistor having a heavy body region
    Patent number: 6828195
    Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
    Type: Grant
    Filed: January 17, 2003
    Date of Patent: December 7, 2004
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Brian Sze-Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst
  • Field effect transistor and method of its manufacture
    Publication number: 20040145015
    Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
    Type: Application
    Filed: July 30, 2003
    Publication date: July 29, 2004
    Applicant: Fairchild Semiconductor Corporation
    Inventors: Brian Sze-Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst
  • Field effect transistor and method of its manufacture
    Patent number: 6710406
    Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
    Type: Grant
    Filed: May 24, 2002
    Date of Patent: March 23, 2004
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Brian Sze-Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst
  • Field effect transistor and method of its manufacture
    Publication number: 20030127688
    Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
    Type: Application
    Filed: January 17, 2003
    Publication date: July 10, 2003
    Applicant: Fairchild Semiconductor Corporation
    Inventors: Brian Sze-Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst
  • Field effect transistor and method of its manufacture
    Publication number: 20020140027
    Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
    Type: Application
    Filed: May 24, 2002
    Publication date: October 3, 2002
    Inventors: Brian Sze-Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst
  • Field effect transistor and method of its manufacture
    Patent number: 6429481
    Abstract: A trenched field effect transistor is provided that includes (a) a semiconductor substrate, (b) a trench extending a predetermined depth into the semiconductor substrate, (c) a pair of doped source junctions, positioned on opposite sides of the trench, (d) a doped heavy body positioned adjacent each source junction on the opposite side of the source junction from the trench, the deepest portion of the heavy body extending less deeply into said semiconductor substrate than the predetermined depth of the trench, and (e) a doped well surrounding the heavy body beneath the heavy body.
    Type: Grant
    Filed: November 14, 1997
    Date of Patent: August 6, 2002
    Assignee: Fairchild Semiconductor Corporation
    Inventors: Brian Sze-Ki Mo, Duc Chau, Steven Sapp, Izak Bencuya, Dean Edward Probst