Patents by Inventor Dean G. Scott
Dean G. Scott has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 10453697Abstract: Wafers processed by methods of plasma etching are disclosed. In one embodiment, a wafer is prepared by a process including positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, focusing the plasma ions using a plasma focusing ring to increase a flux of plasma ions arriving at a surface of the wafer, and etching a plurality of through-wafer vias in the wafer.Type: GrantFiled: August 23, 2018Date of Patent: October 22, 2019Assignee: Skyworks Solutions, Inc.Inventors: Daniel Kwadwo Amponsah Berkoh, Elena Becerra Woodard, Dean G. Scott
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Publication number: 20190057875Abstract: Wafers processed by methods of plasma etching are disclosed. In one embodiment, a wafer is prepared by a process including positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, focusing the plasma ions using a plasma focusing ring to increase a flux of plasma ions arriving at a surface of the wafer, and etching a plurality of through-wafer vias in the wafer.Type: ApplicationFiled: August 23, 2018Publication date: February 21, 2019Inventors: Daniel Kwadwo Amponsah Berkoh, Elena Becerra Woodard, Dean G. Scott
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Patent number: 10083838Abstract: Wafers processed by methods of plasma etching are disclosed. In one embodiment, a wafer is prepared by a process including positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, focusing the plasma ions using a plasma focusing ring to increase a flux of plasma ions arriving at a surface of the wafer, and etching a plurality of through-wafer vias in the wafer.Type: GrantFiled: June 16, 2017Date of Patent: September 25, 2018Assignee: Skyworks Solutions, Inc.Inventors: Daniel Kwadwo Amponsah Berkoh, Elena Becerra Woodard, Dean G. Scott
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Publication number: 20180061651Abstract: Wafers processed by methods of plasma etching are disclosed. In one embodiment, a wafer is prepared by a process including positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, focusing the plasma ions using a plasma focusing ring to increase a flux of plasma ions arriving at a surface of the wafer, and etching a plurality of through-wafer vias in the wafer.Type: ApplicationFiled: June 16, 2017Publication date: March 1, 2018Inventors: Daniel Kwadwo Amponsah Berkoh, Elena Becerra Woodard, Dean G. Scott
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Patent number: 9905484Abstract: Methods for plasma etching are disclosed. In one embodiment, a method of etching a plurality of features on a wafer includes positioning a wafer on a feature plate within a chamber of a plasma etcher, providing a plasma source gas within the chamber, providing an anode above the feature plate and a cathode below the feature plate, connecting a portion of the cathode to the feature plate, generating plasma ions using a radio frequency power source and the plasma source gas, directing the plasma ions toward the wafer using an electric field, and providing an electrode shield around the cathode. The electrode shield is configured to protect the cathode from ions directed toward the cathode including the portion of the cathode connected to the feature plate.Type: GrantFiled: July 1, 2016Date of Patent: February 27, 2018Assignee: Skyworks Solutions, Inc.Inventors: Daniel Kwadwo Amponsah Berkoh, Elena Becerra Woodard, Dean G. Scott
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Patent number: 9711364Abstract: Apparatus and methods for plasma etching are disclosed. In one embodiment, a method for etching a plurality of features on a wafer includes positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, and focusing the plasma ions using a plasma focusing ring. The plasma focusing ring is configured to increase a flux of plasma ions arriving at a surface of the wafer to control the formation of the plurality of features and structures associated therewith.Type: GrantFiled: January 3, 2014Date of Patent: July 18, 2017Assignee: SKYWORKS SOLUTIONS, INC.Inventors: Daniel Kwadwo Amponsah Berkoh, Elena Becerra Woodard, Dean G. Scott
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Publication number: 20160315021Abstract: Methods for plasma etching are disclosed. In one embodiment, a method of etching a plurality of features on a wafer includes positioning a wafer on a feature plate within a chamber of a plasma etcher, providing a plasma source gas within the chamber, providing an anode above the feature plate and a cathode below the feature plate, connecting a portion of the cathode to the feature plate, generating plasma ions using a radio frequency power source and the plasma source gas, directing the plasma ions toward the wafer using an electric field, and providing an electrode shield around the cathode. The electrode shield is configured to protect the cathode from ions directed toward the cathode including the portion of the cathode connected to the feature plate.Type: ApplicationFiled: July 1, 2016Publication date: October 27, 2016Inventors: Daniel Kwadwo Amponsah Berkoh, Elena Becerra Woodard, Dean G. Scott
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Patent number: 9478428Abstract: Apparatus and methods for plasma etching are disclosed. In one embodiment, a method of etching a plurality of features on a wafer includes positioning a wafer on a feature plate within a chamber of a plasma etcher, providing a plasma source gas within the chamber, providing an anode above the feature plate and a cathode below the feature plate, connecting a portion of the cathode to the feature plate, generating plasma ions using a radio frequency power source and the plasma source gas, directing the plasma ions toward the wafer using an electric field, and providing an electrode shield around the cathode. The electrode shield is configured to protect the cathode from ions directed toward the cathode including the portion of the cathode connected to the feature plate.Type: GrantFiled: October 5, 2010Date of Patent: October 25, 2016Assignee: SKYWORKS SOLUTIONS, INC.Inventors: Daniel K. Berkoh, Elena B. Woodard, Dean G. Scott
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Publication number: 20140191415Abstract: Apparatus and methods for plasma etching are disclosed. In one embodiment, a method for etching a plurality of features on a wafer includes positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, and focusing the plasma ions using a plasma focusing ring. The plasma focusing ring is configured to increase a flux of plasma ions arriving at a surface of the wafer to control the formation of the plurality of features and structures associated therewith.Type: ApplicationFiled: January 3, 2014Publication date: July 10, 2014Applicant: SKYWORKS SOLUTIONS, INC.Inventors: Daniel Kwadwo Amponsah Berkoh, Elena Becerra Woodard, Dean G. Scott
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Patent number: 8357263Abstract: Apparatus and methods for plasma etching are disclosed. In one embodiment, an apparatus for etching a plurality of features on a wafer comprises a chamber, a feature plate disposed in the chamber for holding the wafer, a gas channel configured to receive a plasma source gas, an anode disposed above the feature plate, a cathode disposed below the feature plate, a radio frequency power source configured to provide a radio frequency voltage between the anode and the cathode so as to generate plasma ions from the plasma source gas, a pump configured to remove gases and etch particulates from the chamber, and a clamp configured to clamp the wafer against the feature plate. The clamp includes at least one measurement hole for passing a portion of the plasma ions to measure a DC bias of the feature plate.Type: GrantFiled: October 5, 2010Date of Patent: January 22, 2013Assignee: Skyworks Solutions, Inc.Inventors: Daniel K. Berkoh, Elena B. Woodard, Dean G. Scott
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Publication number: 20120083051Abstract: Apparatus and methods for plasma etching are disclosed. In one embodiment, an apparatus for etching a plurality of features on a wafer comprises a chamber, a feature plate disposed in the chamber for holding the wafer, a gas channel configured to receive a plasma source gas, an anode disposed above the feature plate, a cathode disposed below the feature plate, a radio frequency power source configured to provide a radio frequency voltage between the anode and the cathode so as to generate plasma ions from the plasma source gas, a pump configured to remove gases and etch particulates from the chamber, and a clamp configured to clamp the wafer against the feature plate. The clamp includes at least one measurement hole for passing a portion of the plasma ions to measure a DC bias of the feature plate.Type: ApplicationFiled: October 5, 2010Publication date: April 5, 2012Applicant: Skyworks Solutions, Inc.Inventors: Daniel K. Berkoh, Elena B. Woodard, Dean G. Scott
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Publication number: 20120083130Abstract: Apparatus and methods for plasma etching are disclosed. In one embodiment, a method of etching a plurality of features on a wafer includes positioning a wafer on a feature plate within a chamber of a plasma etcher, providing a plasma source gas within the chamber, providing an anode above the feature plate and a cathode below the feature plate, connecting a portion of the cathode to the feature plate, generating plasma ions using a radio frequency power source and the plasma source gas, directing the plasma ions toward the wafer using an electric field, and providing an electrode shield around the cathode. The electrode shield is configured to protect the cathode from ions directed toward the cathode including the portion of the cathode connected to the feature plate.Type: ApplicationFiled: October 5, 2010Publication date: April 5, 2012Applicant: Skyworks Solutions, Inc.Inventors: Daniel K. Berkoh, Elena B. Woodard, Dean G. Scott
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Publication number: 20120083129Abstract: Apparatus and methods for plasma etching are disclosed. In one embodiment, a method for etching a plurality of features on a wafer includes positioning the wafer within a chamber of a plasma etcher, generating plasma ions using a radio frequency power source and a plasma source gas, directing the plasma ions toward the wafer using an electric field, and focusing the plasma ions using a plasma focusing ring. The plasma focusing ring is configured to increase a flux of plasma ions arriving at a surface of the wafer to control the formation of the plurality of features and structures associated therewith.Type: ApplicationFiled: October 5, 2010Publication date: April 5, 2012Applicant: Skyworks Solutions, Inc.Inventors: Daniel K. Berkoh, Elena B. Woodard, Dean G. Scott
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Patent number: 4806010Abstract: A multifocal lens has an upper distance vision zone which is divided by a visible division from a distinct lower portion of the lens which includes an intermediate vision zone of progressively increasing dioptric power which leads into a near vision zone. The visible division is provided by an abrupt change in dioptric power in the range from about 0.5 dioptres to about 0.5 dioptres less than the difference between the constant dioptric powers of the near vision zone and the distance vision zone.Type: GrantFiled: November 19, 1986Date of Patent: February 21, 1989Assignee: Pilkington Visioncare Holdings, Inc.Inventors: Ronald W. Ewer, deceased, Dean G. Scott, legal representative, Kevin D. O'Connor