Patents by Inventor Dean W. Barker

Dean W. Barker has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of making self-aligned gate providing improved breakdown voltage
    Patent number: 5185278
    Abstract: A three level mask structure is formed on a wafer. The top layer of the mask structure has an opening that defines an etch area. The middle layer of the mask structure is etched through the opening in the top layer. This opening in the middle layer defines a gate deposition area. The layer adjacent to the wafer is etched, using the opening in the middle mask layer to define the etch area, until the etching undercuts the middle layer by a predetermined amount. The opening in the layer adjacent to the wafer is used to define an etch area on the wafer. The wafer is etched to form source and drain areas. Gate material is deposited onto the wafer using the opening in the middle layer to determine the deposition area. The mask structure is then removed.
    Type: Grant
    Filed: October 22, 1990
    Date of Patent: February 9, 1993
    Assignee: Motorola, Inc.
    Inventor: Dean W. Barker