Abstract: An image sensor and an image sensing method are provided. A readout circuit outputs a first digital sensing signal according to a floating diffusion node voltage of a first pixel circuit reset after a reset stage and a floating diffusion node voltage of a second pixel circuit reset after the reset stage during a reset signal readout period. The readout circuit outputs a second digital sensing signal according to a sensing result of the first pixel circuit and the floating diffusion node voltage of the second pixel circuit reset after the same reset stage during a sensing signal readout period. The image processing circuit judges whether a digital number of at least one of the first digital sensing signal and the second digital sensing signal is abnormal to decide to keep an original digital number, directly set a pixel value, or reset the second digital sensing signal.

Abstract: An image sensor and an image sensing method are provided. The image sensor includes a first pixel circuit, a second pixel circuit, a ramp signal generating circuit, a comparator, and a signal processing circuit. The first pixel circuit has a first floating diffusion node. The second pixel circuit has a second floating diffusion node. The ramp signal generating circuit respectively provides a first ramp signal and a second ramp signal to the first floating diffusion node and the second floating diffusion node during a dark sun detection period. The comparator receives a first node voltage of the first floating diffusion node and a second node voltage of the second floating diffusion node. The signal processing circuit determines whether to output an output signal and determines whether to overwrite a digital value corresponding to a sensing signal according to whether the comparator is triggered.

Abstract: The present invention is related to a display device, including: a plurality of sub-pixel areas, each including a pixel circuit, each pixel circuit including: a diode, configured to be in a forward-biasing state during a display phase of the pixel circuit for light-emitting and configured to be in a reverse-biasing state in a sensing phase of the pixel circuit for light-sensing; a driving transistor for driving the diode during the display phase and serving as a source follower in the sensing phase; first to sixth transistors, applied to the gates of the first to sixth transistors respectively so that the pixel circuit switching between the display phase and the sensing phase; and a capacitor for storing a data voltage to be written to the diode in the display phase and storing the charge accumulated by the diode in the sensing phase.

Abstract: Provided is an image sensor circuit, including a pixel array and a plurality of different control circuits. The pixel array comprises a plurality of pixel circuit groups arranged in an array. Each pixel circuit group comprises a plurality of pixel circuits that generate corresponding sensitivity values over exposure duration. The pixel circuits include a first quantity of first pixel circuits, and a second quantity of second pixel circuits. The plurality of different control circuits are respectively coupled to different pixel circuits to control the exposure duration thereof with different transmission signals. The different control circuits are also set to control different pixel circuits to output photo-sensed values at different frame rates. The image sensor circuit periodically generates the pixel value of each pixel circuit group according to first and second exposure durations, first and second frame rates, and first and second light sensitivity values of each pixel circuit group.

Abstract: A dynamic vision sensor includes a sensor and an image signal processor. The sensor includes a pixel driver, a plurality of pixel groups, a cluster differential ADC, a cluster memory, a sensor data interface, and a controller. Each of the pixel groups includes a plurality of pixels and a floating diffusion node, each of the pixels includes a photodiode and a switch, the switch controls whether the electric charges accumulated in the photodiode are transferred to the floating diffusion node, the switch in each of the pixels is controlled by the pixel driver, and each of the pixels within a single pixel group is coupled to the floating diffusion node. The controller controls the pixel driver, the cluster differential ADC, the cluster memory, and the sensor data interface to switch between a dynamic sensing mode and a 2D image sensing mode.

Abstract: Particular embodiments described herein provide for a system and method to help prevent condensation inside an enclosure that includes an electronic system. The system and method can determine a current relative humidity of an environment inside an enclosure that houses the electronic system, use the current relative humidity and the current maximum temperature to determine a dew point for the environment inside the enclosure, activate one or more heating elements inside the enclosure when the current minimum temperature is the same or lower than the dew point for the environment inside the enclosure, activate one or more embedded fans, and open one or more vents to help purge moisture out of the system during heating. When the current minimum temperature is higher than the dew point for the environment inside the enclosure, the system and method can allow the electronic system to power on.

Abstract: The present invention is related to a display device, including: a plurality of sub-pixel areas, each including a pixel circuit, each pixel circuit including: a diode, configured to be in a forward-biasing state during a display phase of the pixel circuit for light-emitting and configured to be in a reverse-biasing state in a sensing phase of the pixel circuit for light-sensing; a driving transistor for driving the diode during the display phase and serving as a source follower in the sensing phase; first to sixth transistors, applied to the gates of the first to sixth transistors respectively so that the pixel circuit switching between the display phase and the sensing phase; and a capacitor for storing a data voltage to be written to the diode in the display phase and storing the charge accumulated by the diode in the sensing phase.

Abstract: Particular embodiments described herein provide for a system and method to help prevent condensation inside an enclosure that includes an electronic system. The system and method can determine a current relative humidity of an environment inside an enclosure that houses the electronic system, use the current relative humidity and the current maximum temperature to determine a dew point for the environment inside the enclosure, activate one or more heating elements inside the enclosure when the current minimum temperature is the same or lower than the dew point for the environment inside the enclosure, activate one or more embedded fans, and open one or more vents to help purge moisture out of the system during heating. When the current minimum temperature is higher than the dew point for the environment inside the enclosure, the system and method can allow the electronic system to power on.

Abstract: The present invention relates to an image sensing device comprising: an image sensing array and an image processing circuit. The image sensing array includes sub-array regions used to obtain sensing signals having different exposure period, wherein in a main frame period, the sensing signals include static sensing signals and dynamic sensing signals, the number of the static sensing signals and the dynamic sensing signals are any different positive integers, the static sensing signals are generated at a first frame rate for a first exposure period, and the dynamic sensing signal are generated at a second frame rate for a second exposure period. The image processing circuit analyzes the static sensing signals and the dynamic sensing signals, outputs sub-frames of the sensing signals having the same frame rate in the sub-array region, and fuses the sub-frames each having a different frame rate by a specific ratio to generate a main frame.

Abstract: Provided is an image sensor circuit, including a pixel array and a plurality of different control circuits. The pixel array comprises a plurality of pixel circuit groups arranged in an array. Each pixel circuit group comprises a plurality of pixel circuits that generate corresponding sensitivity values over exposure duration. The pixel circuits include a first quantity of first pixel circuits, and a second quantity of second pixel circuits. The plurality of different control circuits are respectively coupled to different pixel circuits to control the exposure duration thereof with different transmission signals. The different control circuits are also set to control different pixel circuits to output photo-sensed values at different frame rates. The image sensor circuit periodically generates the pixel value of each pixel circuit group according to first and second exposure durations, first and second frame rates, and first and second light sensitivity values of each pixel circuit group.

Abstract: An image sensor and an image sensing method are provided. A readout circuit outputs a first digital sensing signal according to a floating diffusion node voltage of a first pixel circuit reset after a reset stage and a floating diffusion node voltage of a second pixel circuit reset after the reset stage during a reset signal readout period. The readout circuit outputs a second digital sensing signal according to a sensing result of the first pixel circuit and the floating diffusion node voltage of the second pixel circuit reset after the same reset stage during a sensing signal readout period. The image processing circuit judges whether a digital number of at least one of the first digital sensing signal and the second digital sensing signal is abnormal to decide to keep an original digital number, directly set a pixel value, or reset the second digital sensing signal.

Abstract: An image sensor and an image sensing method are provided. The image sensor includes a first pixel circuit, a second pixel circuit, a ramp signal generating circuit, a comparator, and a signal processing circuit. The first pixel circuit has a first floating diffusion node. The second pixel circuit has a second floating diffusion node. The ramp signal generating circuit respectively provides a first ramp signal and a second ramp signal to the first floating diffusion node and the second floating diffusion node during a dark sun detection period. The comparator receives a first node voltage of the first floating diffusion node and a second node voltage of the second floating diffusion node. The signal processing circuit determines whether to output an output signal and determines whether to overwrite a digital value corresponding to a sensing signal according to whether the comparator is triggered.

Abstract: A semiconductor substrate includes a substrate, a first metal oxide semiconductor layer, a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, and a second metal oxide semiconductor layer. The first transistor includes a first metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a first gate of the first conductive layer, a first source of the second conductive layer, and a first drain of the second conductive layer. The second transistor includes a second metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a second gate of the first conductive layer, a second source of the second conductive layer, a second drain of the second conductive layer, and a third metal oxide semiconductor pattern of the second metal oxide semiconductor layer.

Abstract: A semiconductor substrate includes a substrate, a first metal oxide semiconductor layer, a first insulating layer, a first conductive layer, a second insulating layer, a second conductive layer, and a second metal oxide semiconductor layer. The first transistor includes a first metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a first gate of the first conductive layer, a first source of the second conductive layer, and a first drain of the second conductive layer. The second transistor includes a second metal oxide semiconductor pattern of the first metal oxide semiconductor layer, a second gate of the first conductive layer, a second source of the second conductive layer, a second drain of the second conductive layer, and a third metal oxide semiconductor pattern of the second metal oxide semiconductor layer.

Abstract: A tetradentate chelating monoquinoline derivative with a structure as shown in formula (I) is able to specifically chelate redox active metal ions like copper ions that are dis-regulated in neurodegenerative diseases (Alzheimer's disease, Huntington's disease, Parkinson's disease, and amyotrophic lateral sclerosis), or copper accumulation disease like Wilson's disease. The binding constants of these derivatives for zinc are 6-10 orders of magnitude below that ones for copper, and these derivatives have a good capability of reducing an oxidative stress. The method for preparing the derivative is simple and the derivatives have good application prospects in manufacturing drugs for neurodegenerative diseases and diseases related to disorder of copper metabolism.

Abstract: A tetradentate chelating monoquinoline derivative with a structure as shown in formula (I) is able to specifically chelate redox active metal ions like copper ions that are dis-regulated in neurodegenerative diseases (Alzheimer's disease, Huntington's disease, Parkinson's disease, and amyotrophic lateral sclerosis), or copper accumulation disease like Wilson's disease. The binding constants of these derivatives for zinc are 6-10 orders of magnitude below that ones for copper, and these derivatives have a good capability of reducing an oxidative stress. The method for preparing the derivative is simple and the derivatives have good application prospects in manufacturing drugs for neurodegenerative diseases and diseases related to disorder of copper metabolism.

Abstract: A method includes bonding a first plurality of device dies onto a wafer, wherein the wafer includes a second plurality of device dies, with each of the first plurality of device dies bonded to one of the second plurality of device dies. The wafer is then sawed to form a die stack, wherein the die stack includes a first device die from the first plurality of device dies and a second device die from the second plurality of device dies. The method further includes bonding the die stack over a package substrate.

Abstract: A device includes a bottom package component that includes a bottom die, and a dam over a top surface of the bottom die. The dam has a plurality of sides forming a partial ring, with an air gap surrounded by the plurality of side portions. The air gap overlaps the bottom die. A top package component is bonded to the bottom package component, wherein the air gap separates a bottom surface of the top package component from the bottom die.

Abstract: A method includes bonding a first plurality of device dies onto a wafer, wherein the wafer includes a second plurality of device dies, with each of the first plurality of device dies bonded to one of the second plurality of device dies. The wafer is then sawed to form a die stack, wherein the die stack includes a first device die from the first plurality of device dies and a second device die from the second plurality of device dies. The method further includes bonding the die stack over a package substrate.

Abstract: A device includes a bottom package component that includes a bottom die, and a dam over a top surface of the bottom die. The dam has a plurality of sides forming a partial ring, with an air gap surrounded by the plurality of side portions. The air gap overlaps the bottom die. A top package component is bonded to the bottom package component, wherein the air gap separates a bottom surface of the top package component from the bottom die.