Abstract: The present invention is related to a depletion or enhancement mode metal transistor in which the channel regions of a transistor device comprises a thin film metal or metal composite layer formed over an insulating substrate.

Abstract: The present invention is related to a depletion or enhancement mode metal transistor in which the channel regions of a transistor device comprises a thin film metal or metal composite layer formed over an insulating substrate.

Abstract: The present invention relates to a depletion or enhancement mode metal transistor in which the channel region of a transistor device comprises a thin film metal or metal composite layer formed over an insulating substrate.

Abstract: In an apparatus and method for aligning a microlens relative to an edge-emitting semiconductor laser, the components are aligned and coupled without the need for intermediate optics. An edge-emitting semiconductor laser is mounted to a support body which preferably operates as a heat sink. The support body has a side face, which is substantially parallel by the emitting face of the laser. The microlens is formed on a lens substrate. The lens substrate is mounted adjacent the emitting face of the laser and further mounted adjacent the side face of the support body such that the optical axis of the lens substantially aligns with the optical axis of the laser. A substantial portion of the lens substrate extends along the plane of the side face of the support body. The invention has applications in coupling high-power laser energy into fiber optics and in optical computing devices requiring arrays of lasers.

Abstract: An amplitude-modulated diode laser, fabricated from a double heterostructure wafer, having a passive central layer which is partially doped to permit amplification. Losses are modulated in another section of the wafer, electrically isolated from the doped amplifying section, by reverse biasing a P-N junction also formed by doping.