Patents by Inventor Deborah Ann Neumayer
Deborah Ann Neumayer has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 7186573Abstract: A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric film of the delivery wafer is bonded to the upper conductive electrode layer of the CMOS structure by using a low temperature anneal step. A portion of the delivery wafer is then removed providing an integrated FE/CMOS structure wherein the ferroelectric capacitor is formed on top of the CMOS structure. The capacitor is in contact with the transistor of the CMOS structure through all the wiring levels of the CMOS structure.Type: GrantFiled: October 31, 2005Date of Patent: March 6, 2007Assignee: International Business Machines CorporationInventors: James William Adkisson, Charles Thomas Black, Alfred Grill, Randy William Mann, Deborah Ann Neumayer, Wilbur David Pricer, Katherine Lynn Saenger, Thomas McCarroll Shaw
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Patent number: 7015152Abstract: A method of fabricating aluminum oxide films utilizing aluminum alkoxide precursors is described. The aluminum oxide film is formed by (a) providing an aluminum alkoxide precursor that is dissolved, emulsified or suspended in a liquid; (b) providing a vapor generated from the aluminum alkoxide precursor; and (c) depositing an aluminum oxide film on the substrate at a temperature greater than 500° C.Type: GrantFiled: September 30, 2003Date of Patent: March 21, 2006Assignee: International Business Machines CorporationInventors: Alessandro C. Callegari, Deborah Ann Neumayer
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Patent number: 6984591Abstract: A precursor source mixture useful for CVD or ALD of a film comprising: at least one precursor composed of an element selected from the group consisting of Li, Na, K, Rb, Cs, Fr, Be, Mg, Ti, Zr, Hf, Sc, Y, La, V, Nb, Ta, Cr, Mo, W, Mn, Re, Fe, Ru, Os, Co, Rh, Ir, Ni, Pd, Pt, Cu, Ag, Au, Zn, Cd, Hg, B, Al, Ga, In, Tl, Si, Ge, Sn, Pb, As, P, Sb and Bi, to which is bound at least one ligand selected from the group consisting of hydride, alkyl, alkenyl, cycloalkenyl, aryl, alkyne, carbonyl, amido, imido, hydrazido, phosphido, nitrosyl, nitryl, nitrate, nitrile, halide, azide, alkoxy, siloxy, silyl, and halogenated, sulfonated or silyated derivatives thereof, which is dissolved, emulsified or suspended in an inert liquid selected from the group consisting of aliphatic hydrocarbons, aromatic hydrocarbons, alcohols, ethers, aldehydes, ketones, acids, phenols, esters, amines, alkylnitrile, halogenated hydrocarbons, silyated hydrocarbons, thioethers, amines, cyanates, isocyanates, thiocyanates, silicone oils, nitroalkyType: GrantFiled: April 20, 2000Date of Patent: January 10, 2006Assignee: International Business Machines CorporationInventors: Douglas A. Buchanan, Deborah Ann Neumayer
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Publication number: 20040195694Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits. good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.Type: ApplicationFiled: April 23, 2004Publication date: October 7, 2004Applicant: International Business Machines CorporationInventors: Peter Richard Duncombe, Daniel Charles Edelstein, Robert Benjamin Laibowitz, Deborah Ann Neumayer, Tak Hung Ning, Robert Rosenberg, Thomas Mcarraoll Shaw
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Patent number: 6777809Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.Type: GrantFiled: December 19, 2002Date of Patent: August 17, 2004Assignee: International Business Machines CorporationInventors: Peter Richard Duncombe, Daniel Charles Edelstein, Robert Benjamin Laibowitz, Deborah Ann Neumayer, Tak Hung Ning, Robert Rosenberg, Thomas Mcarraoll Shaw
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Patent number: 6773982Abstract: An integrated ferroelectric/CMOS structure which comprises at least a ferroelectric material, a pair of electrodes in contact with opposite surfaces of the ferroelectric material, where the electrodes do not decompose at deposition or annealing, and an oxygen source layer in contact with at least one of said electrodes, said oxygen source layer being a metal oxide which at least partially decomposes during deposition and/or subsequent processing is provided as well as a method of fabricating the same.Type: GrantFiled: August 10, 2001Date of Patent: August 10, 2004Assignee: International Business Machines CorporationInventors: Charles Thomas Black, Cyril Cabral, Jr., Alfred Grill, Deborah Ann Neumayer, Wilbur David Pricer, Katherine Lynn Saenger, Thomas McCarroll Shaw
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Publication number: 20040071879Abstract: A method of fabricating aluminum oxide films utilizing aluminum alkoxide precursors is described. The aluminum oxide film is formed by (a) providing an aluminum alkoxide precursor that is dissolved, emulsified or suspended in a liquid; (b) providing a vapor generated from the aluminum alkoxide precursor; and (c) depositing an aluminum oxide film on the substrate at a temperature greater than 500° C.Type: ApplicationFiled: September 30, 2003Publication date: April 15, 2004Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Alessandro C. Callegari, Deborah Ann Neumayer
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Patent number: 6664186Abstract: A method of fabricating aluminum oxide films utilizing aluminum alkoxide precursors is described. The aluminum oxide film is formed by (a) providing an aluminum alkoxide precursor that is dissolved, emulsified or suspended in a liquid; (b) providing a vapor generated from the aluminum alkoxide precursor; and (c) depositing an aluminum oxide film:on the substrate at a temperature greater than 500° C.Type: GrantFiled: September 29, 2000Date of Patent: December 16, 2003Assignee: International Business Machines CorporationInventors: Alessandro C. Callegari, Deborah Ann Neumayer
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Publication number: 20030155598Abstract: A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric film of the delivery wafer is bonded to the upper conductive electrode layer of the CMOS structure by using a low temperature anneal step. A portion of the delivery wafer is then removed providing an integrated FE/CMOS structure wherein the ferroelectric capacitor is formed on top of the CMOS structure. The capacitor is in contact with the transistor of the CMOS structure through all the wiring levels of the CMOS structure.Type: ApplicationFiled: March 7, 2003Publication date: August 21, 2003Applicant: International Business Machines CorporationInventors: James William Adkisson, Charles Thomas Black, Alfred Grill, Randy William Mann, Deborah Ann Neumayer, Wilbur David Pricer, Katherine Lynn Saenger, Thomas McCarroll Shaw
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Publication number: 20030089943Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.Type: ApplicationFiled: December 19, 2002Publication date: May 15, 2003Applicant: International Business Machines CorporationInventors: Peter Richard Duncombe, Daniel Charles Edelstein, Robert Benjamin Laibowitz, Deborah Ann Neumayer, Tak Hung Ning, Robert Rosenberg, Thomas Mcarraoll Shaw
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Publication number: 20030085447Abstract: An IC including a resistor which is coupled to a metal wiring level through metal contacts, said resistor including a discrete metal-insulator-metal stack, wherein said metal contacts are in contact to one of said metals of said film stack. In the above IC design, current flows laterally through either the top metal electrode, the bottom metal electrode, or both, and any unused electrode is disconnected from the circuit.Type: ApplicationFiled: December 16, 2002Publication date: May 8, 2003Applicant: International Business Machines CorporationInventors: Peter Richard Duncombe, Daniel Charles Edelstein, Robert Benjamin Laibowitz, Deborah Ann Neumayer, Tak Hung Ning, Robert Rosenberg, Thomas McCarroll Shaw
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Patent number: 6555859Abstract: A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric film of the delivery wafer is bonded to the upper conductive electrode layer of the CMOS structure by using a low temperature anneal step. A portion of the delivery wafer is then removed providing an integrated FE/CMOS structure wherein the ferroelectric capacitor is formed on top of the CMOS structure. The capacitor is in contact with the transistor of the CMOS structure through all the wiring levels of the CMOS structure.Type: GrantFiled: August 8, 2001Date of Patent: April 29, 2003Assignee: International Business Machines CorporationInventors: James William Adkisson, Charles Thomas Black, Alfred Grill, Randy William Mann, Deborah Ann Neumayer, Wilbur David Pricer, Katherine Lynn Saenger, Thomas McCarroll Shaw
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Patent number: 6525427Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.Type: GrantFiled: January 22, 2002Date of Patent: February 25, 2003Assignee: International Business Machines CorporationInventors: Peter Richard Duncombe, Daniel Charles Edelstein, Robert Benjamin Laibowitz, Deborah Ann Neumayer, Tak Hung Ning, Robert Rosenberg, Thomas Mcarraoll Shaw
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Patent number: 6511876Abstract: A method of forming a high-k dielectric material which exhibits a substantially lower amount of trap charge within a gate stack region is provided. The method maintains high-temperatures (250° C. or above) such that the substrate wafer is not cooled during the various processing steps. Such a method leads to the formation of a high-k dielectric material which does not exhibit a hysteric behavior in a capacitance-voltage curve as well as an increased mobility on FETs using conventional CMOS processing.Type: GrantFiled: June 25, 2001Date of Patent: January 28, 2003Assignee: International Business Machines CorporationInventors: Douglas A. Buchanan, Alessandro C. Callegari, Michael A. Gribelyuk, Paul C. Jamison, Deborah Ann Neumayer
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Publication number: 20020197789Abstract: A method of forming a high-k dielectric material which exhibits a substantially lower amount of trap charge within a gate stack region is provided. The method maintains high-temperatures (250° C. or above) such that the substrate wafer is not cooled during the various processing steps. Such a method leads to the formation of a high-k dielectric material which does not exhibit a hysteric behavior in a capacitance-voltage curve as well as an increased mobility on FETs using conventional CMOS processing.Type: ApplicationFiled: June 25, 2001Publication date: December 26, 2002Applicant: International Business Machines CorporationInventors: Douglas A. Buchanan, Alessandro C. Callegari, Michael A. Gribelyuk, Paul C. Jamison, Deborah Ann Neumayer
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Publication number: 20020074581Abstract: An integrated ferroelectric/CMOS structure which comprises at least a ferroelectric material, a pair of electrodes in contact with opposite surfaces of the ferroelectric material, where the electrodes do not decompose at deposition or annealing, and an oxygen source layer in contact with at least one of said electrodes, said oxygen source layer being a metal oxide which at least partially decomposes during deposition and/or subsequent processing is provided as well as a method of fabricating the same.Type: ApplicationFiled: August 10, 2001Publication date: June 20, 2002Applicant: International Business Machines CorporationInventors: Charles Thomas Black, Cyril Cabral, Alfred Grill, Deborah Ann Neumayer, Wilbur David Pricer, Katherine Lynn Saenger, Thomas McCarroll Shaw
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Publication number: 20020066919Abstract: An amorphous dielectric material having a dielectric constant of 10 or greater is provided herein for use in fabricating capacitors in integrated circuit applications. The amorphous dielectric material is formed using temperatures below 450° C.; therefore the BEOL metallurgy is not adversely affected. The amorphous dielectric material of the present invention exhibits good conformality and a low leakage current. Damascene devices containing the capacitor of the present invention are also disclosed.Type: ApplicationFiled: January 22, 2002Publication date: June 6, 2002Applicant: INTERNATIONAL BUSINESS MACHINES CORPORATIONInventors: Peter Richard Duncombe, Daniel Charles Edelstein, Robert Benjamin Laibowitz, Deborah Ann Neumayer, Tak Hung Ning, Robert Rosenberg, Thomas McCarraoll Shaw
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Patent number: 6388285Abstract: An integrated ferroelectric/CMOS structure which comprises at least a ferroelectric material, a pair of electrodes in contact with opposite surfaces of the ferroelectric material, where the electrodes do not decompose at deposition or annealing, and an oxygen source layer in contact with at least one of said electrodes, said oxygen source layer being a metal oxide which at least partially decomposes during deposition and/or subsequent processing is provided as well as a method of fabricating the same.Type: GrantFiled: June 4, 1999Date of Patent: May 14, 2002Assignee: International Business Machines CorporationInventors: Charles Thomas Black, Cyril Cabral, Jr., Alfred Grill, Deborah Ann Neumayer, Wilbur David Pricer, Katherine Lynn Saenger, Thomas McCarroll Shaw
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Publication number: 20020028549Abstract: A method of forming an integrated ferroelectric/CMOS structure which effectively separates incompatible high temperature deposition and annealing processes is provided. The method of the present invention includes separately forming a CMOS structure and a ferroelectric delivery wafer. These separate structures are then brought into contact with each and the ferroelectric film of the delivery wafer is bonded to the upper conductive electrode layer of the CMOS structure by using a low temperature anneal step. A portion of the delivery wafer is then removed providing an integrated FE/CMOS structure wherein the ferroelectric capacitor is formed on top of the CMOS structure. The capacitor is in contact with the transistor of the CMOS structure through all the wiring levels of the CMOS structure.Type: ApplicationFiled: August 8, 2001Publication date: March 7, 2002Applicant: International Business Machines CorporationInventors: James William Adkisson, Charles Thomas Black, Alfred Grill, Randy William Mann, Deborah Ann Neumayer, Wilbur David Pricer, Katherine Lynn Saenger, Thomas McCarroll Shaw
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Patent number: 6344660Abstract: A thin film transistor (TFT) device structure based on an organic semiconductor material, that exhibits a high field effect mobility, high current modulation and a low sub-threshold slope at lower operating voltages than the current state of the art organic TFT devices. The structure comprises a suitable substrate disposed with he following sequence of features: a set of conducting gate electrodes covered with a high dielectric constant insulator, a layer of the organic semiconductor, sets of electrically conducting source and drain electrodes corresponding to each of the gate lines, and an optional passivation layer that can overcoat and protect the device structure. Use of high dielectric constant gate insulators exploits the unexpected gate voltage dependence of the organic semiconductor to achieve high field effect mobility levels at very low operating voltages.Type: GrantFiled: June 2, 1999Date of Patent: February 5, 2002Assignee: International Business Machines CorporationInventors: Christos Dimitrios Dimitrakopoulos, Peter Richard Duncombe, Bruce K. Furman, Robert B. Laibowitz, Deborah Ann Neumayer, Sampath Purushothaman