Patents by Inventor Deborah K. Rodriguez

Deborah K. Rodriguez has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Fill and etchback process using dual photoresist sacrificial layer and two-step etching process for planarizing oxide-filled shallow trench structure
    Patent number: 5516625
    Abstract: To planarize an oxide-filled shallow trench-isolated semiconductor architecture, a composite photoresist sacrificial layer is initially formed on the oxide-filled structure. The composite photoresist layer contains photoresist plugs which are reflowed to fill depressions in the oxide fill layer overlying the trench, and an overlying photoresist layer which effectively planarizes the depression-filled trench oxide layer. Respective photoresist and oxide selective etching chemistries are then successively applied to first etch the composite sacrificial photoresist layer and then etch the trench fill oxide layer down to the surface of an etch stop polysilicon layer.
    Type: Grant
    Filed: September 8, 1993
    Date of Patent: May 14, 1996
    Assignee: Harris Corporation
    Inventors: Jeanne M. McNamara, Deborah K. Rodriguez, David H. Leebrick