Abstract: An electro-optic resonant cavity is used to achieve phase modulation with lower driving voltages. Laser damage thresholds are inherently higher than with previously used integrated optics due to the utilization of bulk optics. Phase modulation is achieved at higher speeds with lower driving voltages than previously obtained with non-resonant electro-optic phase modulators. The instant scheme uses a data locking dither approach as opposed to the conventional sinusoidal locking schemes. In accordance with a disclosed embodiment, a resonant cavity modulator has been designed to operate at a data rate in excess of 100 Mbps. By carefully choosing the cavity finesse and its dimension, it is possible to control the pulse switching time to within 4 ns and to limit the required switching voltage to within 10 V. Experimentally, the resonant cavity can be maintained on resonance with respect to the input laser signal by monitoring the fluctuation of output intensity as the cavity is switched.

Abstract: Higher efficiency in cavity dumping and frequency doubling in a laser used to produce modulated output beam pulses is achieved by deflecting light out of the resonant cavity to a third mirror through a frequency doubler using an electro-optic modulator and a polarizing beamsplitter in the resonant cavity, or using just an acousto-optic modulator to deflect light out of the laser cavity in response to a control signal (electric or acoustic). The frequency doubler in front of the third mirror rotates the frequency doubled light so that it will pass out of the laser cavity through the polarizing beamsplitter, while undoubled frequency light is reflected by the polarizing beamsplitter back into the gain medium of the laser. In the case of using a type-II frequency doubler, a dichroic beamsplitter deflects out the frequency doubled light and passes the undoubled frequency light to the polarizing beamsplitter for return to the laser gain medium.

Abstract: A PIN GaAlAs diode structure is provided with parameters for index guiding of light in a single mode. The index of refraction of the central layer I (which in practice may be lightly doped .pi. or .nu.) is greater than the p- and n-layers to create a slab waveguide in the transverse direction. Stripe contacts define separate waveguide channels that are separated electrically and optically by implanting protons or etching grooves between the stripe contacts in the upper layer. Separate reverse biasing voltages may be applied to the stripe contacts for modulation of the light in proportions to the voltage, either with absorption modulation, if the light wavelength is within about 500.ANG. of the bandgap of the .pi.-material, or phase-delay modulation, if the wavelength is separated from the bandgap of the .pi.-material by at least 900.ANG..