Abstract: A apparatus 10 for painting nails is provided. The nail polishing apparatus includes a substantially "U"-shaped nail abutting portion 12 and an integrally formed substantially "V"-shaped portion 14. Portion 12 includes a slot 18 into which a user can insert a finger 68. Surface 16 of portion 12 effectively covers the skin and/or cuticles 78, 80 surrounding the finger nail 72, thereby preventing unnecessary application of nail polish to these areas. Portion 14 is adapted to pivotally support finger 68 and nail 72 at some distance above a surface 68.

Abstract: Instead of trying to keep the SLs of a QC laser field free, we "pre-bias" the actual electronic potential by varying the SL period (and hence average composition) so as to achieve an essentially flat profile, on average, of upper and lower minibands, despite the presence of an applied field in the SLs. In one embodiment, in at least a first subset of the QW layers, the thicknesses of the QW layers are varied from QW layer to QW layer so as to increase in the direction of the applied field. In this embodiment, the upper and lower lasing levels are located, in the absence of an applied electric field, each at different energies from layer to layer within the first subset, so that despite the presence of an applied field, the desired flatband condition of the upper and lower minibands is realized.

Abstract: A QC laser comprises first and second optical confinement (i.e., cladding) regions, and an In-based, Group III-V compound, QC active region disposed between the confinement regions. At least the first confinement region and the active region having the shape of an elongated mesa. An i-type InP layer covers the sidewalls to provide efficient heat transport and effective low loss mode confinement. A metal layer makes ohmic contact with the top surface of the mesa and a rectifying contact with the i-InP layer.

Abstract: A quantum cascade (QC) laser has a multilayer core region comprising alternating layers of a first and a second semiconductor material, with lattice constants a.sub.1 and a.sub.2, respectively. The first material is selected such that a.sub.1 >a.sub.0, where a, is the lattice constant of the substrate (typically InP), and the second material is selected such that a.sub.2 >a.sub.0. The materials are also selected such that the conduction band discontinuity .DELTA.E.sub.c between the first and second materials is greater than 520 meV in absolute value. The multilayer core comprises a multiplicity of essentially identical multilayer repeat units. The layer thicknesses and materials of the repeat units are selected to substantially provide strain compensation over a repeat unit. QC lasers according to this invention preferably comprise a distributed feedback feature, (e.g.

Abstract: In a novel tunable semiconductor laser, the lasing transition is a non-resonant tunneling transition, with the frequency of the emitted photon depending on the electrical bias across the multi-period active region of the laser. The laser can be designed to emit in the mid-IR, and can advantageously be used for, e.g., trace gas sensing.

Abstract: The core of the disclosed novel quantum cascade (QC) laser comprises a multiplicity of nominally identical repeat units, with a given repeat unit comprising a superlattice active region and a carrier injector region. Associated with the superlattice active region is an upper and a lower energy miniband, with the lasing transition being the transition from the lower edge of the upper miniband to the upper edge of the lower miniband. The injector facilitates carrier transport from the lower miniband to the upper miniband of the adjacent downstream repeat unit. QC lasers according to this invention can be designed to emit in the infrared, e.g., in the wavelength region 3-15 .mu.m, and can have high power.

Abstract: It has been found that previously known quantum cascade (QC) lasers have a shortcoming that substantially decreases their usefulness as radiation sources for pollution monitoring and other potential applications that involve absorption measurements. Except at cryogenic temperatures, these lasers have to be driven in pulse mode and are inherently multimode. We have now established that this shortcoming can be overcome by provision of appropriate distributed feedback. Resulting lasers (QC-DFB lasers) can have single mode mid-IR output at or near room temperature, can have significant optical power, and be continuously tunable over a significant spectral region.

Abstract: The novel unipolar laser resembles a quantum cascade laser but utilizes radiative transitions between upper and lower minibands of superlattices, with injection of charge carriers from the lower miniband into the upper miniband of the adjacent downstream superlattice facilitated by a multilayer injector region. The lasing wavelength is typically in the mid-infrared, selectable by choice of the superlattice parameters. The novel laser is potentially well suited for high power operation, since it utilizes carrier transport in minibands, as opposed to tunneling between discrete energy states.

Abstract: The disclosed improved quantum cascade (QC) laser comprises features that facilitate lasing at temperatures above 260 K, preferably above 300 K. Among the features is a wavefunction-increasing feature that enhances the amplitude of the lasing level wavefunction in the adjacent upstream barrier layer, thereby increasing carrier injection efficiency into the lasing level. Exemplarily, the wavefunction-increasing feature is an approximately disposed thin quantum well. Among the features typically is also a chirped superlattice in the injection/relaxation region that acts as a Bragg reflector to suppress escape of carriers from the lasing level in the continuum, while facilitating carrier extraction from the ground state into a miniband, with the energy width of the miniband decreasing over at least a portion of the thickness of the injection/relaxation region.