Patents by Inventor Deborah Mathias

Deborah Mathias has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method of forming a sputtering target
    Patent number: 8076174
    Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
    Type: Grant
    Filed: March 28, 2011
    Date of Patent: December 13, 2011
    Assignee: MiaSole
    Inventors: Daniel R. Juliano, Deborah Mathias, Neil M. Mackie
  • Barrier for doped molybdenum targets
    Patent number: 8017976
    Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
    Type: Grant
    Filed: June 7, 2010
    Date of Patent: September 13, 2011
    Assignee: MiaSole
    Inventors: Daniel R. Juliano, Deborah Mathias, Neil M. Mackie
  • METHOD OF FORMING A SPUTTERING TARGET
    Publication number: 20110171395
    Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
    Type: Application
    Filed: March 28, 2011
    Publication date: July 14, 2011
    Inventors: Daniel R. Juliano, Deborah Mathias, Neil M. Mackie
  • Method of forming a sputtering target
    Patent number: 7927912
    Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
    Type: Grant
    Filed: June 7, 2010
    Date of Patent: April 19, 2011
    Assignee: MiaSole
    Inventors: Daniel R. Juliano, Deborah Mathias, Neil M. Mackie
  • Barrier for doped molybdenum targets
    Publication number: 20100310783
    Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
    Type: Application
    Filed: June 7, 2010
    Publication date: December 9, 2010
    Inventors: Daniel R. Juliano, Deborah Mathias, Neil M. Mackie
  • Barrier for doped molybdenum targets
    Publication number: 20100307915
    Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
    Type: Application
    Filed: June 7, 2010
    Publication date: December 9, 2010
    Inventors: Daniel R. Juliano, Deborah Mathias, Neil M. Mackie
  • Barrier for doped molybdenum targets
    Patent number: 7785921
    Abstract: A sputtering target, including a sputtering layer and a support structure. The sputtering layer includes an alkali-containing transition metal. The support structure includes a second material that does not negatively impact the performance of a copper indium selenide (CIS) based semiconductor absorber layer of a solar cell. The sputtering layer directly contacts the second material.
    Type: Grant
    Filed: April 13, 2009
    Date of Patent: August 31, 2010
    Assignee: Miasole
    Inventors: Daniel R. Juliano, Deborah Mathias, Neil M. Mackie