Patents by Inventor Deborah Partlow

Deborah Partlow has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates
    Patent number: 7420226
    Abstract: High-speed silicon CMOS circuits and high-power AlGaN/GaN amplifiers are integrated on the same wafer. A thin layer of high resistivity silicon is bonded on a substrate. Following the bonding, an AlGaN/GaN structure is grown over the bonded silicon layer. A silicon nitride or a silicon oxide layer is then deposited over the AlGaN/GaN structure. Following this, a thin layer of silicon is bonded to the silicon nitride/silicon oxide layer. An area for the fabrication of AlGaN/GaN devices is defined, and the silicon is etched away from those areas. Following this, CMOS devices are fabricated on the silicon layer and AlGaN/GaN devices fabricated on the AlGaN/GaN surface.
    Type: Grant
    Filed: January 6, 2006
    Date of Patent: September 2, 2008
    Assignee: Northrop Grumman Corporation
    Inventors: Godfrey Augustine, Deborah Partlow, Alfred Paul Turley, Thomas Knight, Jeffrey D. Hartman
  • Small volume thin film and high energy density crystal capacitors
    Publication number: 20070121274
    Abstract: Embodiments of the invention provide parallel plate capacitors comprising a bulk single crystal or single crystal film dielectric material disposed between the parallel plates and capacitors comprising one or more bulk single crystal or single crystal film dielectrics each disposed between two electrodes. Energy storage devices incorporating these capacitors also are disclosed.
    Type: Application
    Filed: July 12, 2006
    Publication date: May 31, 2007
    Inventors: John Talvacchio, James Murduck, Gregory DeSalvo, Rowland Clarke, Abigail Kirschenbaum, Deborah Partlow
  • Novel method for integrating silicon CMOS and AlGaN/GaN wideband amplifiers on engineered substrates
    Publication number: 20060284247
    Abstract: High-speed silicon CMOS circuits and high-power AlGaN/GaN amplifiers are integrated on the same wafer. A thin layer of high resistivity silicon is bonded on a substrate. Following the bonding, an AlGaN/GaN structure is grown over the bonded silicon layer. A silicon nitride or a silicon oxide layer is then deposited over the AlGaN/GaN structure. Following this, a thin layer of silicon is bonded to the silicon nitride/silicon oxide layer. An area for the fabrication of AlGaN/GaN devices is defined, and the silicon is etched away from those areas. Following this, CMOS devices are fabricated on the silicon layer and AlGaN/GaN devices fabricated on the AlGaN/GaN surface.
    Type: Application
    Filed: January 6, 2006
    Publication date: December 21, 2006
    Inventors: Godfrey Augustine, Deborah Partlow, Alfred Turley, Thomas Knight, Jeffrey Hartman