Patents by Inventor Deborah Paskiewicz

Deborah Paskiewicz has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Patent number: 10457836
    Abstract: A polysiloxane film comprises Si—O bonds and has a thickness of 0.3 to 1.5 microns. Adjacent electrodes coated with the polysiloxane film have a leakage current of at most 0.01 mA at 10 V after contact with water. An electrode coated with the polysiloxane film has a contact resistance of at least 0.01 ohms at 1.0 mm of pogo pin compression under a 1.0 N load. The polysiloxane film provides IPx7 protection from ingress of water.
    Type: Grant
    Filed: February 13, 2018
    Date of Patent: October 29, 2019
    Assignee: MOTOROLA MOBILITY LLC
    Inventors: Richard W. Brotzman, Ernest Sirois, Deborah Paskiewicz
  • Patent number: 10351729
    Abstract: A polysiloxane film comprises Si—O bonds and has a thickness of 0.3 to 1.5 microns. Adjacent electrodes coated with the polysiloxane film have a leakage current of at most 0.01 mA at 10 V after contact with water. An electrode coated with the polysiloxane film has a contact resistance of at least 0.01 ohms at 1.0 mm of pogo pin compression under a 1.0 N load. The polysiloxane film provides IPx7 protection from ingress of water.
    Type: Grant
    Filed: March 3, 2016
    Date of Patent: July 16, 2019
    Assignee: MOTOROLA MOBILITY LLC
    Inventors: Richard W Brotzman, Ernest Sirois, Deborah Paskiewicz
  • Patent number: 10212825
    Abstract: A method of forming a polysiloxane film on a substrate comprises polymerizing a siloxane monomer in a reaction chamber containing the substrate. The polymerization is catalyzed by a 30-60 W radio frequency plasma, the pressure in the reaction chamber during the polymerization is 100-400 mTorr, the residence time of the siloxane monomer in the reaction chamber is 5-120 minutes, the siloxane monomer is heated to 30-200° C. before entering the reaction chamber, and the polymerization is carried out at a temperature of 30-100° C.
    Type: Grant
    Filed: March 3, 2016
    Date of Patent: February 19, 2019
    Assignee: Motorola Mobility LLC
    Inventors: Richard W Brotzman, Ernest Sirois, Deborah Paskiewicz
  • Publication number: 20180171176
    Abstract: A polysiloxane film comprises Si—O bonds and has a thickness of 0.3 to 1.5 microns. Adjacent electrodes coated with the polysiloxane film have a leakage current of at most 0.01 mA at 10 V after contact with water. An electrode coated with the polysiloxane film has a contact resistance of at least 0.01 ohms at 1.0 mm of pogo pin compression under a 1.0 N load. The polysiloxane film provides IPx7 protection from ingress of water.
    Type: Application
    Filed: February 13, 2018
    Publication date: June 21, 2018
    Inventors: Richard W. Brotzman, Ernest Sirois, Deborah Paskiewicz
  • Publication number: 20170257950
    Abstract: A method of forming a polysiloxane film on a substrate comprises polymerizing a siloxane monomer in a reaction chamber containing the substrate. The polymerization is catalyzed by a 30-60 W radio frequency plasma, the pressure in the reaction chamber during the polymerization is 100-400 mTorr, the residence time of the siloxane monomer in the reaction chamber is 5-120 minutes, the siloxane monomer is heated to 30-200° C. before entering the reaction chamber, and the polymerization is carried out at a temperature of 30-100° C.
    Type: Application
    Filed: March 3, 2016
    Publication date: September 7, 2017
    Inventors: Richard W. Brotzman, Ernest Sirois, Deborah Paskiewicz
  • Publication number: 20170253765
    Abstract: A polysiloxane film comprises Si—O bonds and has a thickness of 0.3 to 1.5 microns. Adjacent electrodes coated with the polysiloxane film have a leakage current of at most 0.01 mA at 10 V after contact with water. An electrode coated with the polysiloxane film has a contact resistance of at least 0.01 ohms at 1.0 mm of pogo pin compression under a 1.0 N load. The polysiloxane film provides IPx7 protection from ingress of water.
    Type: Application
    Filed: March 3, 2016
    Publication date: September 7, 2017
    Inventors: Richard W. Brotzman, Ernest Sirois, Deborah Paskiewicz