Abstract: The invention herein is directed towards a material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.

Abstract: The invention herein is directed towards a method of making material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.

Abstract: The invention herein is directed towards a method of making material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.

Abstract: The invention herein is directed towards a material exhibiting superconductivity characteristics which includes a laser processed region of a metal oxide crystal. The material has a transition temperature greater than a transition temperature of the metal oxide crystal, preferably greater than 140K. The transition temperature of the material may be considered greater than the transition temperature of the metal oxide crystal if the material has a transition temperature and the metal oxide crystal has no transition temperature. The present invention is also directed to a material which includes a laser processed strontium ruthenate crystal wherein the material has a greater oxygen content than the starting strontium ruthenate crystal. The present invention is also directed towards a method for manufacturing a material exhibiting superconductivity characteristics that includes providing a metal oxide crystal and laser ablating the metal oxide crystal and a material made by this process.

Abstract: Digital RF correlation based signal processing arrangements allow for the development of software—controlled radio reception without the need for down-conversion to IF frequencies. Various arrangements are implemented using superconducting RSFQ logic enabling the clock and processing speeds required.

Abstract: A fast photon detector with high energy and position resolution, which may be used in the infrared, ultraviolet, EUV, and X-ray ranges includes an absorber, a thermoelectric sensor, a heat sink, all disposed on a dielectric substrate. An absorber receives a photon and transforms the energy of the photon into a change in temperature within the absorber. A thermoelectric sensor is thermally coupled to the absorber. When the absorber receives the photon, the energy of the photon is very quickly transformed into a time dependent temperature difference across the sensor. A heat sink is thermally coupled to the sensor, to maintain the heat flow across the sensor. The absorber, sensor, and heat sink are disposed upon a dielectric substrate, such that the heat transfer from the sensor to the dielectric substrate is much slower than the signal duration.

Abstract: Digital RF correlation based signal processing arrangements allow for the development of software—controlled radio reception without the need for down-conversion to IF frequencies. Various arrangements are implemented using superconducting RSFQ logic enabling the clock and processing speeds required.

Abstract: A fast photon detector with high energy and position resolution, which may be used in the infrared, ultraviolet, EUV, and X-ray ranges includes an absorber, a thermoelectric sensor, a heat sink, all disposed on a dielectric substrate. An absorber receives a photon and transforms the energy of the photon into a change in temperature within the absorber. A thermoelectric sensor is thermally coupled to the absorber. When the absorber receives the photon, the energy of the photon is very quickly transformed into a time dependent temperature difference across the sensor. A heat sink is thermally coupled to the sensor, to maintain the heat flow across the sensor. The absorber, sensor, and heat sink are disposed upon a dielectric substrate, such that the heat transfer from the sensor to the dielectric substrate is much slower than the signal duration.

Abstract: An apparatus and method for producing films of silicon nitride whose index of refraction varies continuously with film depth by preselected amounts between n=3.9 and n=1.99. This is done by producing an amorphous film of silicon nitride, Si.sub.1-x N.sub.x, of pre-selected stoichiometry between x=0 and x=0.57. In a vacuum-chamber, a target substrate is exposed to vaporized silicon while being simultaneously bombarded with an ion beam of relatively high kinetic energy, ionized, nitrogen particles. The nitrogen embeds in the silicon film deposited on the substrate to form amorphous silicon nitride, the stoichiometry of which depends on the intensity of the ion beam. Instruments measure during the deposition the relative rate of arrival at the target for silicon and nitrogen, and, with pre-generated calibration data for the apparatus, enable an operator to selectively control the film's stoichiometry by controlling the ion beam's intensity response to the measured rate of silicon deposition.