Abstract: Post-contact opening etchants for post-etch cleans and methods for fabricating such etchants are provided. In an exemplary embodiment, a post-contact opening etchant comprises anhydrous hydrogen fluoride and a fluoride-dissociation modulating agent. In another embodiment, a method for fabricating a post-contact opening etchant comprises providing anhydrous hydrogen fluoride, combining the anhydrous hydrogen fluoride and a fluoride-dissociation modulating agent, and mixing the anhydrous hydrogen fluoride and the fluoride-dissociation modulating agent to form a homogeneous mixture.

Abstract: Optoelectronic devices are described that include: a) a surface within the device, and b) at least one sufficiently light-transmissive crosslinked film, wherein the film is formed from at least one silicon-based material, at least one catalyst, and at least one solvent. Optoelectronic device are also disclosed, which include: a) a surface within the device, and b) at least one light-transmissive crosslinkable composition, wherein the composition comprises at least one silicon-based material, at least one crosslinking agent and at least one solvent. Methods of producing optoelectronic devices are also disclosed that include: a) providing a surface, b) providing at least one sufficiently light-transmissive crosslinkable composition, wherein the composition comprises at least one silicon-based material and at least one catalyst, c) applying the crosslinkable material to the surface, and d) curing the crosslinkable material to form a sufficiently light-transmissive crosslinked composition.

Abstract: A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), trichloromethylsilane (TCMS) and combinations thereof. In accordance with further embodiments of the invention, a post ash substrate comprising a dielectric material is simultaneously cleaned and passivated using a supercritical carbon dioxide cleaning solution.

Abstract: Removal chemistry solutions are described herein that include at least one sulfonic acid component having the formula: R—SO3H ??(Formula I) where R comprises at least one halo group, amino group, alkyl group, alkenyl group, alkynyl group or phenylamino group having the formula C6(NH2)H2XY, where X and Y may comprise at least one hydrogen, halo group, alkyl group, alkenyl group, alkynyl group, hydroxyl group, amino group or phenyl group. R may also comprise R1R2R3C, where R1, R2 and R3 may be the same or different and may comprise at least one hydrogen, halo group, alkyl group, alkenyl group, alkynyl group, hydroxyl group, amino group or aromatic group, and at least one solvent or solvent mixture. In some formulations, at least one fluoride source is added to the removal chemistry solution.

Abstract: Removal chemistry solutions and methods of production thereof are described herein that include at least one fluorine-based constituent, at least one chelating component, surfactant component, oxidizing component or combination thereof, and at least one solvent or solvent mixture. Removal chemistry solutions and methods of production thereof are also described herein that include at least one low H2O content fluorine-based constituent and at least one solvent or solvent mixture.

Abstract: A method and system is described for treating a substrate to remove particles using a supercritical fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for removing particles from the substrate surface. The process chemistry comprises an etchant, a surfactant and, optionally, a co-solvent.

Abstract: A method and system is described for treating a substrate having an open metal surface thereon using a high pressure fluid, such as carbon dioxide in a supercritical state. A process chemistry is introduced to the high pressure fluid for removing residues from the substrate surface. The process chemistry comprises trifluoroacetic acid (TFA).

Abstract: A method of passivating silicon-oxide based low-k materials using a supercritical carbon dioxide passivating solution comprising a silylating agent is disclosed. The silylating agent is preferably an organosilicon compound comprising organo-groups with five carbon atoms such as hexamethyldisilazane (HMDS), chlorotrimethylsilane (TMCS), trichloromethylsilane (TCMS) and combinations thereof. In accordance with further embodiments of the invention, a post ash substrate comprising a dielectric material is simultaneously cleaned and passivated using a supercritical carbon dioxide cleaning solution.