Abstract: A method for manufacturing a trench capacitor with a reduced resistance in a buried strap window for use in a memory circuit such as a dynamic random access memory circuit may be realized by reducing the number of polysilicon layers that are deposited. The method includes the deposition of a collar material followed by a dry etch of the collar material. The collar material is etched away from the top region leaving a layer of collar material on the wall of the trench between the surface of the first polysilicon layer filling the bottom of the trench and the upper region where the collar material was removed. The second polysilicon layer may be deposited after the collar material has been etched for making contact to other devices.