Patents by Inventor Deems Randy Hollingsworth

Deems Randy Hollingsworth has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Versatile system for limiting mobile charge ingress in SOI semiconductor structures
    Patent number: 7148558
    Abstract: Disclosed are apparatus and method for limiting mobile charge (314) ingress within a silicon-on-insulator (SOI) substrate (300). A mask (308) is applied to the substrate to form an aperture (210) over a desired portion of the substrate near its outer edge. A buffer material (214), selected to impede mobile charge ingress, is implanted (310) through the aperture into the insulator layer (304) of the substrate to form a buffer structure (312).
    Type: Grant
    Filed: August 17, 2004
    Date of Patent: December 12, 2006
    Assignee: Texas Instruments Incorporated
    Inventors: Timothy A. Rost, Deems Randy Hollingsworth
  • Versatile system for limiting mobile charge ingress in SOI semiconductor structures
    Publication number: 20050051844
    Abstract: Disclosed are apparatus and method for limiting mobile charge (314) ingress within a silicon-on-insulator (SOI) substrate (300). A mask (308) is applied to the substrate to form an aperture (210) over a desired portion of the substrate near its outer edge. A buffer material (214), selected to impede mobile charge ingress, is implanted (310) through the aperture into the insulator layer (304) of the substrate to form a buffer structure (312).
    Type: Application
    Filed: August 17, 2004
    Publication date: March 10, 2005
    Inventors: Timothy Rost, Deems Randy Hollingsworth
  • Versatile system for limiting mobile charge ingress in SOI semiconductor structures
    Patent number: 6803295
    Abstract: Disclosed are apparatus and method for limiting mobile charge (314) ingress within a silicon-on-insulator (SOI) substrate (300). A mask (308) is applied to the substrate to form an aperture (210) over a desired portion of the substrate near its outer edge. A buffer material (214), selected to impede mobile charge ingress, is implanted (310) through the aperture into the insulator layer (304) of the substrate to form a buffer structure (312).
    Type: Grant
    Filed: June 18, 2002
    Date of Patent: October 12, 2004
    Assignee: Texas Instruments Incorporated
    Inventors: Timothy A. Rost, Deems Randy Hollingsworth
  • Versatile system for limiting mobile charge ingress in SOI semiconductor structures
    Publication number: 20030122193
    Abstract: Disclosed are apparatus and method for limiting mobile charge (314) ingress within a silicon-on-insulator (SOI) substrate (300). A mask (308) is applied to the substrate to form an aperture (210) over a desired portion of the substrate near its outer edge. A buffer material (214), selected to impede mobile charge ingress, is implanted (310) through the aperture into the insulator layer (304) of the substrate to form a buffer structure (312).
    Type: Application
    Filed: June 18, 2002
    Publication date: July 3, 2003
    Inventors: Timothy A. Rost, Deems Randy Hollingsworth