Abstract: The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

Abstract: An integrated circuit (IC) package with an embedded heat spreader in a redistribution layer (RDL) is provided. IC packaging facilitates a high density package for ICs, including monolithic microwave integrated circuits (MMICs). However, IC packaging may result in reduced heat removal from an IC, decreasing radio frequency (RF) circuit performance. In an exemplary aspect, an IC package is provided which incorporates an embedded heat spreader within a dielectric layer of an RDL coupled to an IC die. The embedded heat spreader provides efficient heat transfer, robust RF performance, and operation through millimeter wave (mmW) frequencies, all in a miniature low-cost, low-profile surface mountable (SM) package.

Abstract: An integrated circuit (IC) package with an embedded heat spreader in a redistribution layer (RDL) is provided. IC packaging facilitates a high density package for ICs, including monolithic microwave integrated circuits (MMICs). However, IC packaging may result in reduced heat removal from an IC, decreasing radio frequency (RF) circuit performance. In an exemplary aspect, an IC package is provided which incorporates an embedded heat spreader within a dielectric layer of an RDL coupled to an IC die. The embedded heat spreader provides efficient heat transfer, robust RF performance, and operation through millimeter wave (mmW) frequencies, all in a miniature low-cost, low-profile surface mountable (SM) package.

Abstract: The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

Abstract: Backside metallization techniques for a semiconductor assembly are disclosed. In one aspect, a die, such as a radio frequency (RF) die, within a semiconductor package may include backside metallization for RF performance reasons. The metallization is generally planar and covers a surface of the RF die. Exemplary aspects of the present disclosure cause the metallization to include trenches or grooves to allow for better expansion and contraction during thermal cycling of the RF die. In particular, the trenches decrease a modulus of the metallization layer and act as a shock absorber and allow for compression and expansion of the metallization to match the compression and expansion of the non-metal substrate of the RF die. By allowing for better matching of the compression and expansion of the two heterogeneous materials, delamination may be delayed or averted.

Abstract: An integrated circuit (IC) package with an embedded heat spreader in a redistribution layer (RDL) is provided. IC packaging facilitates a high density package for ICs, including monolithic microwave integrated circuits (MMICs). However, IC packaging may result in reduced heat removal from an IC, decreasing radio frequency (RF) circuit performance. In an exemplary aspect, an IC package is provided which incorporates an embedded heat spreader within a dielectric layer of an RDL coupled to an IC die. The embedded heat spreader provides efficient heat transfer, robust RF performance, and operation through millimeter wave (mmW) frequencies, all in a miniature low-cost, low-profile surface mountable (SM) package.

Abstract: The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

Abstract: The present disclosure relates to a fabrication process of a semiconductor chip, which starts with providing a precursor wafer mounted on a carrier. The precursor wafer includes a precursor substrate and component portions between the carrier and the precursor substrate. The precursor substrate is then thinned down to provide a thinned substrate, which includes a substrate base adjacent to the component portions and an etchable region over the substrate base. Next, the etchable region is selectively etched to generate a number of protrusions over the substrate base. Herein, the substrate base is retained, and portions of the substrate base are exposed through the protrusions. Each protrusion protrudes from the substrate base and has a same height. A metal layer is then applied to provide a semiconductor wafer. The metal layer selectively covers the exposed portions of the substrate base and covers at least a portion of each protrusion.

Abstract: The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

Abstract: The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

Abstract: A module assembly includes an adapter substrate with at least one cavity and a surface mounted die mounted on a top surface of the adapter substrate. The first cavity extends through the adapter substrate and has at least one first side wall. A first metallization layer is provided within the cavity. A first recessed die is attached to the first metallization layer and mounted within the cavity such that the first recessed die is at least partially recessed into the first cavity and surrounded by a gap filler that resides between side portions of the first recessed die and the at least one first side wall. The top surface of the gap filler is flush with the top surface of the adapter substrate and a top surface of the first recessed die.

Abstract: An integrated circuit (IC) package with an embedded heat spreader in a redistribution layer (RDL) is provided. IC packaging facilitates a high density package for ICs, including monolithic microwave integrated circuits (MMICs). However, IC packaging may result in reduced heat removal from an IC, decreasing radio frequency (RF) circuit performance. In an exemplary aspect, an IC package is provided which incorporates an embedded heat spreader within a dielectric layer of an RDL coupled to an IC die. The embedded heat spreader provides efficient heat transfer, robust RF performance, and operation through millimeter wave (mmW) frequencies, all in a miniature low-cost, low-profile surface mountable (SM) package.

Abstract: The present disclosure relates to a fabrication process of a semiconductor chip, which starts with providing a precursor wafer mounted on a carrier. The precursor wafer includes a precursor substrate and component portions between the carrier and the precursor substrate. The precursor substrate is then thinned down to provide a thinned substrate, which includes a substrate base adjacent to the component portions and an etchable region over the substrate base. Next, the etchable region is selectively etched to generate a number of protrusions over the substrate base. Herein, the substrate base is retained, and portions of the substrate base are exposed through the protrusions. Each protrusion protrudes from the substrate base and has a same height. A metal layer is then applied to provide a semiconductor wafer. The metal layer selectively covers the exposed portions of the substrate base and covers at least a portion of each protrusion.

Abstract: The present disclosure relates to a semiconductor chip that includes a substrate, a metal layer, and a number of component portions. Herein, the substrate has a substrate base and a number of protrusions protruding from a bottom surface of the substrate base. The substrate base and the protrusions are formed of a same material. Each of the protrusions has a same height. At least one via hole extends vertically through one protrusion and the substrate base. The metal layer selectively covers exposed surfaces at a backside of the substrate and fully covers inner surfaces of the at least one via hole. The component portions reside over a top surface of the substrate base, such that a certain one of the component portions is electrically coupled to a portion of the metal layer at the top of the at least one via hole.

Abstract: A module assembly includes an adapter substrate with at least one cavity and a surface mounted die mounted on a top surface of the adapter substrate. The first cavity extends through the adapter substrate and has at least one first side wall. A first metallization layer is provided within the cavity. A first recessed die is attached to the first metallization layer and mounted within the cavity such that the first recessed die is at least partially recessed into the first cavity and surrounded by a gap filler that resides between side portions of the first recessed die and the at least one first side wall. The top surface of the gap filler is flush with the top surface of the adapter substrate and a top surface of the first recessed die.

Abstract: A module assembly includes an adapter substrate with at least one cavity and a surface mounted die mounted on a top surface of the adapter substrate. The first cavity extends through the adapter substrate and has at least one first side wall. A first metallization layer is provided within the cavity. A first recessed die is attached to the first metallization layer and mounted within the cavity such that the first recessed die is at least partially recessed into the first cavity and surrounded by a gap filler that resides between side portions of the first recessed die and the at least one first side wall. The top surface of the gap filler is flush with the top surface of the adapter substrate and a top surface of the first recessed die.

Abstract: A module assembly includes an adapter substrate with at least one cavity and a surface mounted die mounted on a top surface of the adapter substrate. The first cavity extends through the adapter substrate and has at least one first side wall. A first metallization layer is provided within the cavity. A first recessed die is attached to the first metallization layer and mounted within the cavity such that the first recessed die is at least partially recessed into the first cavity and surrounded by a gap filler that resides between side portions of the first recessed die and the at least one first side wall. The top surface of the gap filler is flush with the top surface of the adapter substrate and a top surface of the first recessed die.

Abstract: Methods and apparatuses for forming a package for high-power semiconductor devices are disclosed herein. A package may include a plurality of distinct thermal spreader layers disposed between a die and a metal carrier. Other embodiments are described and claimed.

Abstract: Methods and apparatuses for forming a package for high-power semiconductor devices are disclosed herein. A package may include a plurality of distinct thermal spreader layers disposed between a die and a metal carrier. Other embodiments are described and claimed.

Abstract: Embodiments include but are not limited to semiconductor devices including a barrier layer, a gallium nitride channel layer having a Ga-face coupled with the barrier layer, and a thermoconductive layer having a thermal conductivity of at least 500 W/(m·K) within 1000 nanometers of a Ga-face of the gallium nitride channel layer. The semiconductor device may be a high-electron-mobility transistor or a semiconductor wafer. Methods for making the same also are described.