Abstract: Ferroelectric diodes comprising materials such as aluminum scandium nitride (AlScN) or hafnium zirconium oxide (HfZrO2) may be formed atop semiconductor structures such as CMOS wafers to create storage memory cells. search Ternary Content Addressable Memory (TCAM) cells, and/neural circuitry. The diodes are non-volatile and field programmable via pulsing to a pulse-number-dependent analog state, with high on/off and self-rectifying ratios. Cells may be formed, for example, with two diodes that are oppositely polarized, and may be achieved without transistors to form, for example, 0T-2R structures.

Abstract: Two-dimensional (2D) crystals have renewed opportunities in artificial lattice design and assembly without the constraints of epitaxy. However, the lack of thickness control in exfoliated van der Waals (vdW) layers prevents realization of repeat units with high fidelity. Uniform, wafer-scale samples permits engineering of both electronic and optical dispersions in stacks of disparate 2D layers with multiple repeating units. Systems, methods, and devices present optical dispersion engineering in a superlattice structure including alternating layers of 2D excitonic chalcogenides and dielectric insulators. Examples demonstrate >90% narrowband absorption in <4 nm active layer excitonic absorber medium at room temperature, concurrently with enhanced photoluminescence in cm2 samples. These superlattices show evidence of strong light-matter coupling and exciton-polariton formation with geometry-tunable coupling constants.

Abstract: Provided are novel transition metal dichalcogenides having a platelet structure and comprising a 2H phase region and/or a 3R phase region. The platelets exhibit a narrow size distribution and comparatively high surface area and edge area, which characteristics render the platelets especially suitable for catalysis applications, as well as use in electronic devices. Also provided are methods of synthesizing the disclosed transition metal dichalcogenide platelets.

Abstract: Provided are ferroelectric field effect transistor (FeFET) based memory devices. These devices include aluminum scandium nitride (AlScN) as a ferroelectric dielectric and 2D chalcogenide semiconductors as a semiconductor channel in the transistor. The disclosed materials, devices and fabrication processes involved are compatible with back end of the line (BEOL) processing of a silicon based microchip and also compatible with silicon microprocessor fabrication.