Patents by Inventor Deepa Ratakonda
Deepa Ratakonda has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
-
Patent number: 9331137Abstract: An integrated circuit may include interconnects formed from alternating metal interconnect layers and inter-metal dielectric layers. A metal-insulator-metal capacitor may be formed within a selected inter-metal dielectric layer. The metal-insulator-metal capacitor may include first and second capacitor electrodes. The first capacitor electrode may contact a first conductive interconnect line in an underlying metal interconnect layer. The second capacitor electrode may overlap the first capacitor electrode and a portion of a second conductive interconnect line in the underlying metal layer. A via may be formed between the underlying metal interconnect layer and an additional metal interconnect layer. The via may simultaneously contact the second capacitor electrode and the second conductive interconnect line.Type: GrantFiled: March 27, 2012Date of Patent: May 3, 2016Assignee: Altera CorporationInventors: Deepa Ratakonda, Peter Smeys, Shuxian Chen, Girish Venkitachalam
-
Patent number: 8912104Abstract: An integrated circuit may include a substrate in which transistors are formed. The transistors may be associated with blocks of circuitry. Some of the blocks of circuitry may be configured to reduce leakage current. A selected subset of the blocks of circuitry may be selectively heated to reduce the channel length of their transistors through dopant diffusion and thereby strengthen those blocks of circuitry relative to the other blocks of circuitry. Selective heating may be implemented by coating the blocks of circuitry on the integrated circuit with a patterned layer of material such as a patterned anti-reflection coating formed of amorphous carbon or a reflective coating. During application of infrared light, the coated and uncoated areas will rise to different temperatures, selectively strengthening desired blocks of circuitry on the integrated circuit.Type: GrantFiled: March 14, 2011Date of Patent: December 16, 2014Assignee: Altera CorporationInventors: Deepa Ratakonda, Christopher J. Pass, Che Ta Hsu, Fangyun Richter, Wilson Wong
-
Patent number: 6849544Abstract: A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal silicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multi-layer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.Type: GrantFiled: June 4, 2003Date of Patent: February 1, 2005Assignee: Micron Technology, Inc.Inventors: Ronald A. Weimer, Yongjun Jeff Hu, Pai Hung Pan, Deepa Ratakonda, James Beck, Randhir P. S. Thakur
-
Publication number: 20030207556Abstract: A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal silicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multi-layer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.Type: ApplicationFiled: June 4, 2003Publication date: November 6, 2003Inventors: Ronald A. Weimer, Yongjun Jeff Hu, Pai Hung Pan, Deepa Ratakonda, James Beck, Randhir P.S. Thakur
-
Patent number: 6596595Abstract: A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal silicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multi-layer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.Type: GrantFiled: July 20, 2000Date of Patent: July 22, 2003Assignee: Micron Technology, Inc.Inventors: Ronald A. Weimer, Yongjun Jeff Hu, Pai Hung Pan, Deepa Ratakonda, James Beck, Randhir P. S. Thakur
-
Patent number: 6362086Abstract: A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal suicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multilayer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.Type: GrantFiled: September 15, 1999Date of Patent: March 26, 2002Assignee: Micron Technology, Inc.Inventors: Ronald A. Weimer, Yongjun Jeff Hu, Pai Hung Pan, Deepa Ratakonda, James Beck, Randhir P. S. Thakur
-
Patent number: 6291868Abstract: A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal silicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multi-layer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.Type: GrantFiled: February 26, 1998Date of Patent: September 18, 2001Assignee: Micron Technology, Inc.Inventors: Ronald A. Weimer, Yongjun Jeff Hu, Pai Hung Pan, Deepa Ratakonda, James Beck, Randhir P. S. Thakur
-
Publication number: 20010014522Abstract: A conductive structure for use in a semiconductor device includes a multilayer structure. A first layer includes a material containing silicon, e.g., polysilicon and silicon germanide. A barrier layer is formed over the first layer, with the barrier layer including metal silicide or metal silicide nitride. A top conductive layer is formed over the barrier layer. The top conductive layer can include metal or metal silicide. Selective oxidation can be performed to reduce the amount of oxidation of selected materials in a structure containing multiple layers, such as the multilayer conductive structure. The selective oxidation is performed in a single-wafer rapid thermal processing system, in which a selected ambient, including hydrogen, is used to ensure low oxidation of a selected material, such as tungsten or a metal nitride.Type: ApplicationFiled: September 15, 1999Publication date: August 16, 2001Inventors: RONALD A. WEIMER, YONGJUN JEFF HU, PAI HUNG PAN, DEEPA RATAKONDA, JAMES BECK, RANDHIR P.S. THAKUR