Patents by Inventor Deepak C. Pandey

Deepak C. Pandey has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • LOW CAPACITANCE THROUGH SUBSTRATE VIA STRUCTURES
    Publication number: 20220310486
    Abstract: Apparatuses and methods are disclosed herein for the formation of low capacitance through substrate via structures. An example apparatus includes an opening formed in a substrate, wherein the opening has at least one sidewall, a first dielectric at least formed on the sidewall of the opening, a first conductor at least formed on the first dielectric, a second dielectric at least formed on the first conductor, and a second conductor at least formed on a sidewall of the second dielectric.
    Type: Application
    Filed: June 13, 2022
    Publication date: September 29, 2022
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: DEEPAK C. PANDEY, HAITAO LIU, CHANDRA MOULI
  • Low capacitance through substrate via structures
    Patent number: 11362018
    Abstract: Apparatuses and methods are disclosed herein for the formation of to capacitance through substrate via structures. An example apparatus includes an opening formed in a substrate. Wherein the opening has at least one sidewall, a first dielectric at least formed on the sidewall of the opening, a first conductor at least formed on the first dielectric, a second dielectric at least formed on the first conductor, and a second conductor at least formed on a sidewall of the second dielectric.
    Type: Grant
    Filed: October 30, 2019
    Date of Patent: June 14, 2022
    Assignee: Micron Technology, Inc.
    Inventors: Deepak C. Pandey, Haitao Liu, Chandra Mouli
  • LOW CAPACITANCE THROUGH SUBSTRATE VIA STRUCTURES
    Publication number: 20200066617
    Abstract: Apparatuses and methods ate disclosed herein for the formation of to capacitance through substrate via structures. An example apparatus includes an opening formed in a substrate. Wherein the opening has at least one sidewall, a first dielectric at least formed on the sidewall of the opening, a first conductor at least formed on the first dielectric, a second dielectric at least formed on the first conductor, and a second conductor at least formed on a sidewall of the second dielectric.
    Type: Application
    Filed: October 30, 2019
    Publication date: February 27, 2020
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: DEEPAK C. PANDEY, HAITAO LIU, CHANDRA MOULI
  • Low capacitance through substrate via structures
    Patent number: 10490483
    Abstract: Apparatuses and methods are disclosed herein for the formation of low capacitance through substrate via structures. An example apparatus includes an opening formed in a substrate, wherein the opening has at least one sidewall, a first dielectric at least formed on the sidewall of the opening, a first conductor at least formed on the first dielectric, a second dielectric at least formed on the first conductor, and a second conductor at least formed on a sidewall of the second dielectric.
    Type: Grant
    Filed: March 7, 2016
    Date of Patent: November 26, 2019
    Assignee: Micron Technology, Inc.
    Inventors: Deepak C. Pandey, Haitao Liu, Chandra Mouli
  • LOW CAPACITANCE THROUGH SUBSTRATE VIA STRUCTURES
    Publication number: 20170256490
    Abstract: Apparatuses and methods are disclosed herein for the formation of low capacitance through substrate via structures. An example apparatus includes an opening formed in a substrate, wherein the opening has at least one sidewall, a first dielectric at least formed on the sidewall of the opening, a first conductor at least formed on the first dielectric, a second dielectric at least formed on the first conductor, and a second conductor at least formed on a sidewall of the second dielectric.
    Type: Application
    Filed: March 7, 2016
    Publication date: September 7, 2017
    Applicant: MICRON TECHNOLOGY, INC.
    Inventors: Deepak C. Pandey, HAITAO LIU, CHANDRA MOULI