Abstract: A glass fiber-based structural composite offers an alternative or supplement to carbon fibers in areas such as battery storage. Through electroless deposition of conductive materials like copper and nickel, the glass fiber surface is made conducting and functions as a good current collector. By using anode and cathode materials like manganese (II, III) oxide and Zinc, cathode and anode mats on the copper- and nickel-coated glass fibers are created via hydrothermal and electro-deposition methods. In one example application, the anode and cathode mats are in an alternate square patterned arrangement using copper and nickel-coated glass fiber as a current collector. The device, with a capacity of >300 mAh/g at 0.1 A/g is assembled using an alternate system of epoxy and electrolyte. Uncoated pristine glass fiber ladened and patterned with electrolyte are used as a separator. Uncoated pristine glass fiber ladened with epoxy can be used as an insulator between two devices.

Abstract: Energized composites include vertically aligned graphene on carbon fibers (VGCF). The VGCF enhances surface area available for charge storage, acts as templates for depositing other charge storing materials and provides stability for a minimum of 100,000 discharge cycles. The final storage device is in the order of high strength carbon fiber matrix with active material, glass fiber separator with polymer electrolyte and another carbon fiber matrix with active material. To achieve higher voltage or current, devices can be connected in series or parallel, respectively. The whole structure is made into a structural component by infusing epoxy resin. An alternating pattern of energy storage devices allows for the epoxy resin to seep through the whole structure and strongly bind them to make a monolith multifunctional composite.

Abstract: A measurement circuit of a body weight measuring apparatus is provided. The measurement circuit comprises a load sensing unit including at least one wheatstone bridge circuit for generating a load information comprising at least one of: a left-side weight, a right-side weight, an anterior-side weight, and a posterior-side weight in the form of an output voltage, upon application of a load. The load sensing unit is powered by an input excitation voltage across the at least one wheatstone bridge circuit. The measurement circuit includes an amplifier circuit to amplify the output voltage to generate an amplified output, an analog to digital converter circuit for converting the amplified output to a digital representation of the weight of the load, and a microcontroller to receive and transmit the digital representation of the weight of the load to a server for computing an exact weight of the load.

Abstract: A dual-function supercapacitor carbon fiber composite stores electrical energy and functions, for example, as the body shell of electric vehicles (EVs). This is achieved with a vertically aligned graphene on carbon fiber electrode, upon which metal oxides were deposited to obtain ultra-high energy density anode and cathode. A high-strength multilayer carbon composite assembly is fabricated using an alternate layer patterning configuration of epoxy and polyacrylamide gel electrolyte. The energized composite delivers a high areal energy density of 0.31 mWh cm?2 at 0.3 mm thickness and showed a high tensile strength of 518 MPa, bending strength of 477 MPa, and impact strength 2666 J/m. To show application in EVs, a toy car body fabricated with energized composite operates using the energy stored inside the frame. Moreover, when integrated with a solar cell, this composite powered an IoT (interne of things) device, showing feasibility in communication satellites.

Abstract: Energized composites include vertically aligned graphene on carbon fibers (VGCF). The VGCF enhances surface area available for charge storage, acts as templates for depositing other charge storing materials and provides stability for a minimum of 100,000 discharge cycles. The final storage device is in the order of high strength carbon fiber matrix with active material, glass fiber separator with polymer electrolyte and another carbon fiber matrix with active material. To achieve higher voltage or current, devices can be connected in series or parallel, respectively. The whole structure is made into a structural component by infusing epoxy resin. An alternating pattern of energy storage devices allows for the epoxy resin to seep through the whole structure and strongly bind them to make a monolith multifunctional composite.

Abstract: Methods that can optimize data storage via tracking flashcopy use are provided. One method includes storing flashcopies of data to a target volume in which the data is stored on a source volume and each flashcopy represents a particular portion of the data. The method further includes tracking a quantity of input/output (I/O) requests for each respective portion of the data on the target volume represented by a flashcopy and copying a particular portion of the data from the source volume to the target volume in response to receiving a predetermined quantity of I/O requests on the target volume for the particular portion of the data. Systems and apparatus that can include, perform, and/or implement the methods are also provided.

Abstract: Methods that can optimize data storage via tracking flashcopy use are provided. One method includes storing flashcopies of data to a target volume in which the data is stored on a source volume and each flashcopy represents a particular portion of the data. The method further includes tracking a quantity of input/output (I/O) requests for each respective portion of the data on the target volume represented by a flashcopy and copying a particular portion of the data from the source volume to the target volume in response to receiving a predetermined quantity of I/O requests on the target volume for the particular portion of the data. Systems and apparatus that can include, perform, and/or implement the methods are also provided.

Abstract: A method and arrangement for operating a pump system are disclosed, the pump system including a pump arranged to be rotated with an AC motor, an inverter, the output of which is electrically connected to the AC motor, and a photovoltaic panel system electrically connected to feed DC power to the inverter. The method can include setting a voltage limit, and determining continuously voltage obtained from the photovoltaic panel system. When the determined voltage of the photovoltaic panel system is below the set voltage limit, frequency of the inverter can be controlled such that the ratio between output voltage of the inverter and the output frequency is substantially constant. When the determined voltage of the photovoltaic panel system exceeds the voltage limit, the inverter frequency can be controlled for keeping voltage of the photovoltaic panel system substantially at the voltage limit.

Abstract: Some embodiments include transistor-containing constructions having gate material within an opening in a semiconductor material and spaced from the semiconductor material by gate dielectric material. The opening has a wide lower region beneath a narrow upper region. A saddle region of the gate dielectric material extends outwardly from a bottom of the opening and is along the semiconductor material beneath the opening. A saddle region of the gate material extends outwardly from the bottom of the opening and is along the gate dielectric material beneath the opening. Source/drain regions are within the semiconductor material along sides of the gate material. Some embodiments include memory arrays.

Abstract: Some embodiments include transistor-containing constructions having gate material within an opening in a semiconductor material and spaced from the semiconductor material by gate dielectric material. The opening has a wide lower region beneath a narrow upper region. A saddle region of the gate dielectric material extends outwardly from a bottom of the opening and is along the semiconductor material beneath the opening. A saddle region of the gate material extends outwardly from the bottom of the opening and is along the gate dielectric material beneath the opening. Source/drain regions are within the semiconductor material along sides of the gate material. Some embodiments include memory arrays.

Abstract: Some embodiments include methods of forming transistors. Recesses are formed to extend into semiconductor material. The recesses have upper regions lined with liner material and have segments of semiconductor material exposed along lower regions. Semiconductor material is isotropically etched through the exposed segments which transforms the recesses into openings having wide lower regions beneath narrow upper regions. Gate dielectric material is formed along sidewalls of the openings. Gate material is formed within the openings and over regions of the semiconductor material between the openings. Insulative material is formed down the center of each opening and entirely through the gate material. A segment of gate material extends from one of the openings to the other, and wraps around a pillar of the semiconductor material between the openings. The segment is a gate of a transistor. Source/drain regions are formed on opposing sides of the gate.

Abstract: Some embodiments include transistor-containing constructions having gate material within an opening in a semiconductor material and spaced from the semiconductor material by gate dielectric material. The opening has a wide lower region beneath a narrow upper region. A saddle region of the gate dielectric material extends outwardly from a bottom of the opening and is along the semiconductor material beneath the opening. A saddle region of the gate material extends outwardly from the bottom of the opening and is along the gate dielectric material beneath the opening. Source/drain regions are within the semiconductor material along sides of the gate material. Some embodiments include memory arrays.

Abstract: Some embodiments include methods of forming transistors. Recesses are formed to extend into semiconductor material. The recesses have upper regions lined with liner material and have segments of semiconductor material exposed along lower regions. Semiconductor material is isotropically etched through the exposed segments which transforms the recesses into openings having wide lower regions beneath narrow upper regions. Gate dielectric material is formed along sidewalls of the openings. Gate material is formed within the openings and over regions of the semiconductor material between the openings. Insulative material is formed down the center of each opening and entirely through the gate material. A segment of gate material extends from one of the openings to the other, and wraps around a pillar of the semiconductor material between the openings. The segment is a gate of a transistor. Source/drain regions are formed on opposing sides of the gate.

Abstract: A method and arrangement are disclosed for operating a pump in pump system having a photovoltaic panel system, an inverter electrically connected to the photovoltaic panel system, and a motor driving the pump and electrically connected to the output of the inverter. The method can include setting a voltage limit for the inverter, monitoring the voltage produced by the photovoltaic panel system, operating the inverter for rotating of the motor when the voltage produced by the photovoltaic panel system is above the voltage limit, and disabling use of the inverter when the voltage of the photovoltaic system remains below the voltage limit.

Abstract: A method and arrangement for operating a pump system are disclosed, the pump system including a pump arranged to be rotated with an AC motor, an inverter, the output of which is electrically connected to the AC motor, and a photovoltaic panel system electrically connected to feed DC power to the inverter. The method can include setting a voltage limit, and determining continuously voltage obtained from the photovoltaic panel system. When the determined voltage of the photovoltaic panel system is below the set voltage limit, frequency of the inverter can be controlled such that the ratio between output voltage of the inverter and the output frequency is substantially constant. When the determined voltage of the photovoltaic panel system exceeds the voltage limit, the inverter frequency can be controlled for keeping voltage of the photovoltaic panel system substantially at the voltage limit.