Patents by Inventor Deepak Veereddy

Deepak Veereddy has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).

  • Publication number: 20160005845
    Abstract: There are disclosed herein various implementations of a group III-V transistor utilizing a substrate having a dielectrically-filled region. A semiconductor structure providing such a group III-V transistor includes a group IV substrate having the dielectrically-filled region, and a group III-V body situated over a top surface of the group IV substrate. The group III-V body includes a group III-V transistor having a top drain electrode, a top gate electrode, and a top source electrode. The group III-V transistor is situated substantially over the dielectrically-filled region of the substrate so as to increase a breakdown voltage of the group III-V transistor, and to also reduce an Rdson of the group III-V transistor.
    Type: Application
    Filed: June 8, 2015
    Publication date: January 7, 2016
    Inventors: Hyeongnam Kim, Mohamed Imam, Deepak Veereddy
  • Publication number: 20160005816
    Abstract: There are disclosed herein various implementations of a group III-V transistor with a voltage controlled substrate. A semiconductor structure providing such a group III-V transistor includes a group IV substrate having a dielectrically-filled region, and a group III-V body situated over a top surface of the group IV substrate. The group III-V body includes a group III-V transistor having a top drain electrode, a top gate electrode, and a top source electrode. The semiconductor structure also includes a source-side via extending through the group III-V body to couple the top source electrode to a source-side region of the group IV substrate so as to reduce an Rdson of the group III-V transistor, and also to increase a breakdown voltage of the group III-V transistor.
    Type: Application
    Filed: June 8, 2015
    Publication date: January 7, 2016
    Inventors: Hyeongnam Kim, Mohamed Imam, Deepak Veereddy
  • Publication number: 20160005821
    Abstract: There are disclosed herein various implementations of a group III-V transistor with a voltage controlled substrate. A semiconductor structure providing such a group III-V transistor includes a group IV substrate having a dielectrically-filled region, and a group III-V body situated over a top surface of the group IV substrate. The group III-V body includes a group III-V transistor having a top drain electrode, a top gate electrode, and a top source electrode. The semiconductor structure also includes a source-side via extending through the group III-V body to couple the top source electrode to a source-side region of the group IV substrate. The source-side region of the group IV substrate is further coupled to a bottom source contact situated under a bottom surface of the group IV substrate.
    Type: Application
    Filed: June 8, 2015
    Publication date: January 7, 2016
    Inventors: Hyeongnam Kim, Mohamed Imam, Deepak Veereddy