Abstract: The present disclosure relates to systems and methods for using a wearable device to monitor patients suffering from congestive heart failure as well as other related diseases. In particular, a wearable patch is disclosed. The wearable patch includes a patch body with a body patch side attached to and contacting a user's body as well as an opposing non-body patch side. The body patch side is configured to accommodate carotid arterial pressure sensors and bioimpedance and ECG/EKG electrodes for collecting physiological data from the user. The patch may also include jugular venous pressure sensors. A controller is disposed on the non-body patch side of the patch body. The controller includes a data collection module to receive data from the pressure sensors and the bioimpedance electrodes, a processing module to preprocess the data received, and a communication module for transmitting the preprocessed data to a backend analysis system for analysis.

Abstract: A wearable health monitoring fabric is provided. The wearable fabric includes a set of textrodes. The set of textrodes is configured to measure thoracic electrical bioimpedance (TEB) of a user's body. The set of textrodes include at least two first textrodes. The set of textrodes also include at least two second textrodes. The set of textrodes is fabricated on an upper part of the wearable fabric. Further, the wearable health monitoring fabric is more compatible and user friendly as the textrodes are non-invasive in nature.

Abstract: A wearable health monitoring fabric is provided. The wearable fabric includes a set of textrodes. The set of textrodes is configured to measure thoracic electrical bioimpedance (TEB) of a user's body. The set of textrodes include at least two first textrodes. The set of textrodes also include at least two second textrodes. The set of textrodes is fabricated on an upper part of the wearable fabric. Further, the wearable health monitoring fabric is more compatible and user friendly as the textrodes are non-invasive in nature.

Abstract: A system and method for simulating behavior of a spin transfer torque magnetic random access memory (STT-MRAM) device includes a hardware processor (HP) and logic instructions (LI) stored in memory. The LI are executed by the HP to configure a library of functional blocks (FBs) to capture physical phenomenon of at least one element of the STT-MRAM configured in the form of a magnetic stack. Selected elements of the stack are mapped into a set of selected FBs (SFBs). The mapping converts the stack to a spin device circuit (SDC) represented by the SFBs. The SFBs are assembled to form the SDC replicating the stack. The SDC includes an electron spin transport, a magnet-dynamics, a magnetic coupling and a coupled electron transport+magnet-dynamics FBs. A set of output parameters simulating the STT-MRAM is generated by the SFBs in response to receiving a set of input parameters.

Abstract: Magnetic devices and methods for forming a magnetic device are disclosed. The magnetic device includes a MTJ element. The MTJ element has first and second MTJ terminals which include first and second electrodes. The free layer of the MTJ element includes a natural precessional frequency which undergoes Rabi oscillation in the presence of a radio frequency (RF) matching the natural precessional frequency. A strain induced magnetoelectric (SIM) unit contacts one of the electrodes proximate to the free layer of the MTJ element while a digital line is coupled to the SIM unit. A desired voltage is provided on the digital line to cause the SIM unit to produce a desired strain on the electrode proximate to the free layer to tune the precessional frequency of the free layer to a desired precessional frequency for detecting a desired RF by the magnetic device. The desired RF causes a change in current through the MTJ element due to Rabi oscillation.

Abstract: Spin switch devices with voltage controlled magnetism in ultra-low power usage applications are disclosed. The spin switch devices may be configured to provide ultra-low power and ultra-high speed switching by directly controlling drain or gate electron spins via electric field induced magnetic anisotropy tuned with finite gate voltage. A lateral spin switch with voltage controlled magnetic drain is placed in an “OFF” or an “ON” state by controlling the gate voltage to be equal to 0 or greater than 0 volts respectively. A vertical spin switch with voltage controlled magnetic gate is placed in an “OFF” or an “ON” state by controlling a value of the gate voltage to be less than a threshold voltage or greater than the threshold voltage respectively. A voltage controlled complementary switch provides a very large gain by controlling a value of the gate voltage to be equal to 0 volts.

Abstract: Magnetic devices and methods for forming a magnetic device are disclosed. The magnetic device includes a MTJ element. The MTJ element has first and second MTJ terminals which include first and second electrodes. The free layer of the MTJ element includes a natural precessional frequency which undergoes Rabi oscillation in the presence of a radio frequency (RF) matching the natural precessional frequency. A strain induced magnetoelectric (SIM) unit contacts one of the electrodes proximate to the free layer of the MTJ element while a digital line is coupled to the SIM unit. A desired voltage is provided on the digital line to cause the SIM unit to produce a desired strain on the electrode proximate to the free layer to tune the precessional frequency of the free layer to a desired precessional frequency for detecting a desired RF by the magnetic device. The desired RF causes a change in current through the MTJ element due to Rabi oscillation.

Abstract: Spin switch devices with voltage controlled magnetism in ultra-low power usage applications are disclosed. The spin switch devices may be configured to provide ultra-low power and ultra-high speed switching by directly controlling drain or gate electron spins via electric field induced magnetic anisotropy tuned with finite gate voltage. A lateral spin switch with voltage controlled magnetic drain is placed in an “OFF” or an “ON” state by controlling the gate voltage to be equal to 0 or greater than 0 volts respectively. A vertical spin switch with voltage controlled magnetic gate is placed in an “OFF” or an “ON” state by controlling a value of the gate voltage to be less than a threshold voltage or greater than the threshold voltage respectively. A voltage controlled complementary switch provides a very large gain by controlling a value of the gate voltage to be equal to 0 volts.

Abstract: A system and method for simulating behavior of a spin transfer torque magnetic random access memory (STT-MRAM) device includes a hardware processor (HP) and logic instructions (LI) stored in memory. The LI are executed by the HP to configure a library of functional blocks (FBs) to capture physical phenomenon of at least one element of the STT-MRAM configured in the form of a magnetic stack. Selected elements of the stack are mapped into a set of selected FBs (SFBs). The mapping converts the stack to a spin device circuit (SDC) represented by the SFBs. The SFBs are assembled to form the SDC replicating the stack. The SDC includes an electron spin transport, a magnet-dynamics, a magnetic coupling and a coupled electron transport+magnet-dynamics FBs. A set of output parameters simulating the STT-MRAM is generated by the SFBs in response to receiving a set of input parameters.