Patents by Inventor Deepika Singh
Deepika Singh has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 9567492Abstract: A chemical mechanical polishing (CMP) includes providing a slurry including composite particles dispersed in a water-based carrier that comprise a plurality of hard particles on an outer surface of a soft-core particle. The hard particles have a Mohs hardness at least 1 greater than a Mohs hardness of the soft core particle and/or a Vickers hardness at least 500 Kg/mm2 greater than the soft-core particle. A substrate having a substrate surface with a hardness greater than a Mohs number of 6 or a Vickers hardness greater than 1,000 kg/mm2 is placed into a CMP apparatus having a rotating polishing pad, and CMP is performed with the rotating polishing pad and the slurry to polish the substrate surface.Type: GrantFiled: August 28, 2014Date of Patent: February 14, 2017Assignees: Sinmat, Inc., University of Florida Research Foundation, Inc.Inventors: Rajiv K. Singh, Arul Chakkaravarthi Arjunan, Kannan Balasundaram, Deepika Singh, Wei Bai
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Patent number: 9551075Abstract: A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm, and (v) first oxide particles with a per surface area per unit mass <100 m2/gm mixed with another oxide particle type having an average area per unit mass >150 m2/gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.Type: GrantFiled: August 4, 2014Date of Patent: January 24, 2017Assignees: Sinmat, Inc., University of Florida Research Foundation, Inc.Inventors: Rajiv K. Singh, Kannan Balasundaram, Arul Chakkaravarthi Arjunan, Deepika Singh, Wei Bai
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Publication number: 20160215017Abstract: The present invention relates to a peptaibol having sequence AcAib-Asn-Aib-Leu-Aib-Pro-Aib-Asn-Leu-Pro-Ileuol, isolated from endophytic fungus Trichoderma longibrachiatum having accession number MTCC 5721. The peptaibol is named as brachiating D. The present also related to a process for isolating the peptaibol from and use of the peptaibol as a pharmacologically active compound as a strong immunosuppressants and as an anticancer agents.Type: ApplicationFiled: August 29, 2014Publication date: July 28, 2016Applicant: COUNCIL OF SCIENTIFIC & INDUSTRIAL RESEARCHInventors: Deepika SINGH, Jai Prakash SHARMA, Sundeep JAGLAN, Abid Hamid DAR, Anamika KHAJURIA, Varun Pratap SINGH, Ram Asrey VISHWAKARMA
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Patent number: 9368367Abstract: Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness <6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.Type: GrantFiled: April 13, 2009Date of Patent: June 14, 2016Assignees: Sinmat, Inc., University of Florida Research Foundation, Inc.Inventors: Rajiv K. Singh, Arul Chakkaravarthi Arjunan, Dibakar Das, Deepika Singh, Abhudaya Mishra, Tanjore V. Jayaraman
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Publication number: 20160060488Abstract: A chemical mechanical polishing (CMP) includes providing a slurry including composite particles dispersed in a water-based carrier that comprise a plurality of hard particles on an outer surface of a soft-core particle. The hard particles have a Mohs hardness at least 1 greater than a Mohs hardness of the soft core particle and/or a Vickers hardness at least 500 Kg/mm2 greater than the soft-core particle. A substrate having a substrate surface with a hardness greater than a Mohs number of 6 or a Vickers hardness greater than 1,000 kg/mm2 is placed into a CMP apparatus having a rotating polishing pad, and CMP is performed with the rotating polishing pad and the slurry to polish the substrate surface.Type: ApplicationFiled: August 28, 2014Publication date: March 3, 2016Inventors: RAJIV K. SINGH, ARUL CHAKKARAVARTHI ARJUNAN, KANNAN BALASUNDARAM, DEEPIKA SINGH, WEI BAI
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Patent number: 9259818Abstract: A method of chemical mechanical polishing (CMP) a diamond containing surface includes providing a slurry including a plurality of particles, at least one oxidizer, and at least one acid, wherein the slurry has a pH?3 or pH greater than 11. At least an outer surface of the plurality of particles is softer than the diamond surface or the particles are diamond particles averaging less than (<)2 ?m in size. The diamond surface is pressed with respect to a polishing pad providing a Shore D Hardness less than 99 having the slurry in between while rotating the polishing pad relative to the diamond surface to form a smooth diamond surface having a root mean square (rms) surface roughness less than 15 nm.Type: GrantFiled: November 6, 2012Date of Patent: February 16, 2016Assignees: Sinmat, Inc., University of Florida Research Foundation, Inc.Inventors: Rajiv Singh, Deepika Singh, Arul Chakkaravarthi Arjunan
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Patent number: 9259819Abstract: A method of chemical mechanical polishing (CMP) a diamond containing surface includes providing a slurry including a plurality of particles, at least one oxidizer, and at least one acid, wherein the slurry has a pH?3 or pH greater than 11. At least an outer surface of the plurality of particles is softer than the diamond surface or the particles are diamond particles averaging less than (<) 2 ?m in size. The diamond surface is pressed with respect to a polishing pad providing a Shore D Hardness less than 99 having the slurry in between while rotating the polishing pad relative to the diamond surface to form a smooth diamond surface having a root mean square (rms) surface roughness less than 15 nm.Type: GrantFiled: September 23, 2014Date of Patent: February 16, 2016Assignees: Sinmat, inc., University of Florida Research Foundation, Inc.Inventors: Rajiv K. Singh, Deepika Singh, Arul Chakkaravarthi Arjunan
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Publication number: 20160032461Abstract: A CMP method uses a slurry including a first metal oxide or semiconductor oxide particles (first oxide particles) in water. At least one particle feature is selected from (i) first oxide particles having a polydispersity >30%, (ii) a coating on first oxide particles including Group I or Group II ions, transition metal oxide, or organic material, (iii) first oxide particles mixed with fumed oxide particles, (iv) first oxide particles with average primary size >50 nm mixed with fumed oxide particles having average primary size <25 nm, and (v) first oxide particles with a per surface area per unit mass <100 m2/gm mixed with another oxide particle type having an average area per unit mass >150 m2/gm. A substrate having an alumina surface is placed into a CMP apparatus, and CMP is performed with a rotating polishing pad and the slurry to polish the alumina surface.Type: ApplicationFiled: August 4, 2014Publication date: February 4, 2016Inventors: RAJIV K. SINGH, KANNAN BALASUNDARAM, ARUL CHAKKARAVARTHI ARJUNAN, DEEPIKA SINGH, WEI BAI
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Publication number: 20150027981Abstract: A method of chemical mechanical polishing (CMP) a diamond containing surface includes providing a slurry including a plurality of particles, at least one oxidizer, and at least one acid, wherein the slurry has a pH?3 or pH greater than 11. At least an outer surface of the plurality of particles is softer than the diamond surface or the particles are diamond particles averaging less than (<) 2 ?m in size. The diamond surface is pressed with respect to a polishing pad providing a Shore D Hardness less than 99 having the slurry in between while rotating the polishing pad relative to the diamond surface to form a smooth diamond surface having a root mean square (rms) surface roughness less than 15 nm.Type: ApplicationFiled: September 23, 2014Publication date: January 29, 2015Inventors: RAJIV K. SINGH, DEEPIKA SINGH, ARUL CHAKKARAVARTHI ARJUNAN
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Patent number: 8828874Abstract: A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed.Type: GrantFiled: March 28, 2011Date of Patent: September 9, 2014Assignees: Sinmat, Inc., University of Florida Research Foundation, Inc.Inventors: Rajiv K. Singh, Arul Chakkaravarthi Arjunan, Deepika Singh, Abhudaya Mishra
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Publication number: 20140191243Abstract: A patterned article includes a substrate support having planar substrate surface portions including a substrate material having a substrate refractive index. A patterned surface is on the substrate support including a plurality of features lateral to the planar substrate surface portions protruding above a height of the planar substrate surface portions. At least a top surface of the plurality of features include an epi-blocking layer including at least one of (i) a non-single crystal material having a refractive index lower as compared to the substrate refractive index and (ii) a reflecting metal or a metal alloy (reflecting material). The epi-blocking layer is not on the planar substrate surface portions.Type: ApplicationFiled: January 8, 2013Publication date: July 10, 2014Applicants: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC., SINMAT, INC.Inventors: RAJIV K. SINGH, PURUSHOTTAM KUMAR, DEEPIKA SINGH
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Publication number: 20140124793Abstract: A method of chemical mechanical polishing (CMP) a diamond containing surface includes providing a slurry including a plurality of particles, at least one oxidizer, and at least one acid, wherein the slurry has a pH?3 or pH greater than 11. At least an outer surface of the plurality of particles is softer than the diamond surface or the particles are diamond particles averaging less than (<)2 ?m in size. The diamond surface is pressed with respect to a polishing pad providing a Shore D Hardness less than 99 having the slurry in between while rotating the polishing pad relative to the diamond surface to form a smooth diamond surface having a root mean square (rms) surface roughness less than 15 nm.Type: ApplicationFiled: November 6, 2012Publication date: May 8, 2014Applicants: University of Florida Research Foundation, Inc., Sinmat, Inc.Inventors: RAJIV SINGH, DEEPIKA SINGH, ARUL CHAKKARAVARTHI ARJUNAN
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Patent number: 8652295Abstract: A chemical mechanical polishing (CMP) apparatus includes a process controller operable to execute a multi-step CMP algorithm implementing delivering a first chemical composition onto the wafer surface while on a platen for a first time duration, and without removing the wafer from the platen, delivering a second chemical composition different from the first chemical composition onto the wafer surface for a second time duration. CMP is performed with a polishing pad contacting the wafer surface using a slurry including the first chemical composition during the first time duration or the second chemical composition during the second time duration, and a non-polishing process without any contact of the polishing pad to the wafer surface using the other of the first and second chemical composition during the other of the time durations, and repeating the multi-step CMP comprising process a plurality of times on the wafer.Type: GrantFiled: July 1, 2013Date of Patent: February 18, 2014Assignee: Sinmat, Inc.Inventors: Rajiv Singh, Deepika Singh, Abhudaya Mishra
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Publication number: 20140000808Abstract: A chemical mechanical polishing (CMP) apparatus includes a process controller operable to execute a multi-step CMP algorithm implementing delivering a first chemical composition onto the wafer surface while on a platen for a first time duration, and without removing the wafer from the platen, delivering a second chemical composition different from the first chemical composition onto the wafer surface for a second time duration. CMP is performed with a polishing pad contacting the wafer surface using a slurry including the first chemical composition during the first time duration or the second chemical composition during the second time duration, and a non-polishing process without any contact of the polishing pad to the wafer surface using the other of the first and second chemical composition during the other of the time durations, and repeating the multi-step CMP comprising process a plurality of times on the wafer.Type: ApplicationFiled: July 1, 2013Publication date: January 2, 2014Inventors: RAJIV SINGH, DEEPIKA SINGH, ABHUDAYA MISHRA
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Patent number: 8557133Abstract: Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ?6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.Type: GrantFiled: November 28, 2011Date of Patent: October 15, 2013Assignees: Sinmat, Inc., University of Florida Research Foundation, Inc.Inventors: Rajiv K Singh, Arul C. Arjunan, Dibakar Das, Deepika Singh, Abhudaya Mishra, Tanjore V Jayaraman
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Patent number: 8506835Abstract: A cyclic method of chemical mechanical polishing (CMP) a wafer having a surface includes placing the wafer on a platen in a CMP apparatus and then performing a multi-step CMP comprising process. The multi-step CMP process includes delivering a first chemical composition onto the wafer while on the platen for a first time duration, and without removing the wafer from the platen, delivering a second chemical composition different from the first composition onto the wafer for a second time duration after the first time duration. The multi-step CMP comprising process includes CMP removal using a slurry during one of the first and second time durations and a non-polishing process during the other of the first and second time durations. The multi-step CMP comprising process is repeated a plurality of times.Type: GrantFiled: April 15, 2010Date of Patent: August 13, 2013Assignee: Sinmat, Inc.Inventors: Rajiv Singh, Deepika Singh, Abhudaya Mishra
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Publication number: 20120252213Abstract: A method of chemically-mechanically polishing a substrate having a Group III-nitride surface includes providing a chemical-mechanical polishing slurry composition. The slurry composition includes a slurry solution including a liquid carrier and an oxidizer including a transition metal or a per-based compound. The slurry solution includes at least one component that reacts with the Group III-nitride surface to form a softened Group III-nitride surface. The Group III-nitride comprising surface is contacted with the slurry composition by a pad to form the softened Group III-nitride surface. The pad is moved relative to the softened Group III-nitride surface, wherein at least a portion of the softened Group III-nitride surface is removed.Type: ApplicationFiled: March 28, 2011Publication date: October 4, 2012Applicants: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC., SINMAT, INC.Inventors: Rajiv K. Singh, Arul Chakkaravarthi Arjunan, Deepika Singh, Abhudaya Mishra
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Publication number: 20120070991Abstract: Slurry compositions and chemically activated CMP methods for polishing a substrate having a silicon carbide surface using such slurries. In such methods, the silicon carbide surface is contacted with a CMP slurry composition that comprises i) a liquid carrier and ii) a plurality of particles having at least a soft surface portion, wherein the soft surface portion includes a transition metal compound that provides a Mohs hardness ?6, and optionally iii) an oxidizing agent. The oxidizing agent can include a transition metal. The slurry is moved relative to the silicon carbide comprising surface, wherein at least a portion of the silicon carbide surface is removed.Type: ApplicationFiled: November 28, 2011Publication date: March 22, 2012Applicants: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION INC., SINMAT, INC.Inventors: RAJIV K. SINGH, ARUL Chakkaravarthi ARJUNAN, DIBAKAR DAS, DEEPIKA SINGH, ABHUDAYA MISHRA, TANJORE V. JAYARAMAN
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Publication number: 20110256802Abstract: A cyclic method of chemical mechanical polishing (CMP) a wafer having a surface includes placing the wafer on a platen in a CMP apparatus and then performing a multi-step CMP comprising process. The multi-step CMP process includes delivering a first chemical composition onto the wafer while on the platen for a first time duration, and without removing the wafer from the platen, delivering a second chemical composition different from the first composition onto the wafer for a second time duration after the first time duration. The multi-step CMP comprising process includes CMP removal using a slurry during one of the first and second time durations and a non-polishing process during the other of the first and second time durations. The multi-step CMP comprising process is repeated a plurality of times.Type: ApplicationFiled: April 15, 2010Publication date: October 20, 2011Applicants: UNIVERSITY OF FLORIDA RESEARCH FOUNDATION, INC., SINMAT, INC.Inventors: Rajiv Singh, Deepika Singh, Abhudaya Mishra
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Publication number: 20110221039Abstract: An epitaxial article includes a substrate having a substrate surface having a substrate surface composition including crystalline defect or amorphous regions and crystalline non-defect regions. The crystalline defect or amorphous regions are recessed from the substrate surface by surface recess regions. A capping material fills the surface recess regions to provide capped defects that extend from a top of the defect regions to the substrate surface. The capping material is compositionally different from the substrate surface composition. An epitaxial layer over the substrate surface provides an average crystalline defect density in at least one area having a size ?0.5 ?m2 that is ? two times lower than an average crystalline defect density in that area at or below the substrate surface.Type: ApplicationFiled: March 12, 2010Publication date: September 15, 2011Applicants: Sinmat, Inc., University of Florida Research Foundation, Inc.Inventors: Rajiv K. Singh, Arul Chakkaravarthi Arjunan, Deepika Singh