Abstract: Systems and methods are provided for method for etch assisted gold (Au) through silicon mask plating (EAG-TSM). An example method comprises providing a seed layer on a substrate and providing a silicon mask on at least a portion of the seed layer on the substrate. The silicon mask includes one or more via to be filled with Au. The masked substrate is subjected to at least one processing cycle, each processing cycle including an Au plating sub-step and an etch treatment sub-step. The cycles are repeated until a selected via fill thickness is achieved.

Abstract: A process chamber and method of modulating thin film growth on a wafer using a plasma-enhanced chemical vapor deposition (PECVD) process is described. During a first deposition phase, a first portion of a film is disposed on a wafer on a pedestal in a process chamber. During a second deposition phase, a second portion of the film is deposited on the wafer. The wafer is unclamped from the pedestal prior to the first and/or second deposition phase and remains unclamped during the first and/or second deposition phase. The wafer has a non-zero wafer bow during unclamped deposition phase to provide a radially non-uniform thickness profile of the film on the wafer.

Abstract: Systems and methods for redirecting cleaning chemistry flows within a multi-station semiconductor processing chamber are disclosed. In such systems, a cleaning chemistry flow, e.g., a plasma from a remote plasma generator, may be directed onto a hub of an indexer that is centrally mounted within the chamber. The hub may have features that cause the cleaning chemistry flows to be redirected in a radially outward direction. By rotating the hub and/or changing the relative elevational positions between the hub and a cleaning chemistry inlet that provides the cleaning chemistry, the cleaning chemistry may be redirected into different regions of the chamber, thereby allowing for a more thorough and complete cleaning process.

Abstract: Systems and methods are provided for method for etch assisted gold (Au) through silicon mask plating (EAG-TSM). An example method comprises providing a seed layer on a substrate and providing a silicon mask on at least a portion of the seed layer on the substrate. The silicon mask includes one or more via to be filled with Au. The masked substrate is subjected to at least one processing cycle, each processing cycle including an Au plating sub-step and an etch treatment sub-step. The cycles are repeated until a selected via fill thickness is achieved.