Abstract: A cam-driven wire mesh-type electrospinning apparatus and a use method therefor are provided. The cam-driven wire mesh-type electrospinning apparatus includes the following components: a high-voltage (HV) power supply unit, a wire mesh-type spinneret, a fiber receiving device, a cam unit, and a solution supply unit. The positions and connection relationships of all the components are as follows: any end of the wire mesh-type spinneret is connected to the HV power supply unit, and the other end of the wire mesh-type spinneret is connected to the cam unit; the wire mesh-type spinneret is installed on the solution supply unit; and the fiber receiving device is positioned right above the wire mesh-type spinneret. The cam-driven wire mesh-type electrospinning apparatus may induce a solution to be uniformly distributed on a wire mesh plane, and adjust the density of jet flow and the distribution position of the jet flow.

Abstract: Provided is a shallow trench isolating structure and a semiconductor device. The trench isolating structure is formed in a substrate and includes a first and a second part. The first part has a first side wall extending from a surface of the substrate to a location, the first side wall has a first slope, and a surface of it has a first roughness. The second part has a second side wall extending from the first side wall to a location, the second side wall has a second slope, and a surface of it has a second roughness, the second slope is greater than the first slope, and the second roughness is greater than the first roughness. The disclosure solves the problem that it is difficult to fill the shallow trench isolating structure, and an undersized available space of the surface of the substrate may not be caused.

Abstract: Provided is a shallow trench isolating structure and a semiconductor device. The trench isolating structure is formed in a substrate and includes a first and a second part. The first part has a first side wall extending from a surface of the substrate to a location, the first side wall has a first slope, and a surface of it has a first roughness. The second part has a second side wall extending from the first side wall to a location, the second side wall has a second slope, and a surface of it has a second roughness, the second slope is greater than the first slope, and the second roughness is greater than the first roughness. The disclosure solves the problem that it is difficult to fill the shallow trench isolating structure, and an undersized available space of the surface of the substrate may not be caused.