Abstract: A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH4 and controlling the passivation rate and stoichiometry using a CF2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced.

Abstract: A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.

Abstract: The invention relates to a device for an atomic force microscope (AFM) for the study and/or modification of surface properties. The device comprises a cantilever (flexible bar) having an integrated, piezoresistive sensor, an integrated bimorphic actuator, and a measuring tip. The measuring tip carries at least two metal electrodes, which can be activated via electrical terminals. The measuring tip and/or the cantilever have at least one nanoscopic hole through which synchrotron radiation or laser light is directed onto the material surface to be studied. Furthermore, the invention relates to a method for the study and modification of surface properties and surface-proximal properties, which can be executed using such a device. To this end, atomic force microscopy (AFM), surface enhanced Raman scattering (SERS), photo emission spectroscopy (XPS, XAS), and material modification by local exposure are executed in sequence or simultaneously using the same device.

Abstract: A novel approach to dry development of exposed photo resist is described in which a photo resist layer is exposed to a visible light source in order to remove the resist in the areas of exposure. The class of compounds used as the resist material, under the influence of the light source, undergoes a chemical/structural change such that the modified material becomes volatile and is thus removed from the resist surface. The exposure process is carried out for a time sufficient to ablate the exposed resist layer down to the layer below. A group of compounds found to be useful in this process includes aromatic calixarenes.

Abstract: The invention relates to a device for an atomic force microscope (AFM) for the study and/or modification of surface properties. The device comprises a cantilever (flexible bar) having an integrated, piezoresistive sensor, an integrated bimorphic actuator, and a measuring tip. The measuring tip carries at least two metal electrodes, which can be activated via electrical terminals. The measuring tip and/or the cantilever have at least one nanoscopic hole through which synchrotron radiation or laser light is directed onto the material surface to be studied. Furthermore, the invention relates to a method for the study and modification of surface properties and surface-proximal properties, which can be executed using such a device. To this end, atomic force microscopy (AFM), surface enhanced Raman scattering (SERS), photo emission spectroscopy (XPS, XAS), and material modification by local exposure are executed in sequence or simultaneously using the same device.

Abstract: A method for silicon micromachining techniques based on high aspect ratio reactive ion etching with gas chopping has been developed capable of producing essentially scallop-free, smooth, sidewall surfaces. The method uses precisely controlled, alternated (or chopped) gas flow of the etching and deposition gas precursors to produce a controllable sidewall passivation capable of high anisotropy. The dynamic control of sidewall passivation is achieved by carefully controlling fluorine radical presence with moderator gasses, such as CH4 and controlling the passivation rate and stoichiometry using a CF2 source. In this manner, sidewall polymer deposition thicknesses are very well controlled, reducing sidewall ripples to very small levels. By combining inductively coupled plasmas with controlled fluorocarbon chemistry, good control of vertical structures with very low sidewall roughness may be produced.