Abstract: A memory device includes a memory string, and a control logic coupled to the memory string. The control logic is configured to perform a first programming operation and a second programming operation on a selected memory cell of the memory string, after the first programming operation and before the second programming operation, apply a ground voltage to a first word line coupled to the selected memory cell, and apply a first voltage to a second word line coupled to an unselected memory cell of the memory string, wherein the first voltage is higher than the ground voltage.

Abstract: Disclosed packsack damping module and packsack, comprises a housing, a first movable member, a second movable member and an elastic element, the housing is internally provided with a mounting cavity; the first movable member and the second movable member are both provided in the mounting cavity; the first movable member is connected with one end of the elastic element, the other end of the elastic element is connected with the second movable member; or the elastic element is provided with the first elastic member and the second elastic member, one end of the first elastic member is connected with the first movable member, the other end of the first elastic member is connected with the housing, one end of the second elastic member is connected with the first movable member, the other end of the second elastic member is connected with the housing. The disclosure improves the damping effect.