Patents by Inventor Dejiu Fan
Dejiu Fan has filed for patents to protect the following inventions. This listing includes patent applications that are pending as well as patents that have already been granted by the United States Patent and Trademark Office (USPTO).
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Patent number: 11901473Abstract: To reach high efficiencies, thermophotovoltaic cells must utilize the broad spectrum of a radiative thermal source. One promising approach to overcome this challenge is to have low-energy photons reflected and reabsorbed by the thermal emitter, where their energy can have another chance at contributing toward photogeneration in the cell. However, current methods for photon recuperation are limited by insufficient bandwidth or parasitic absorption, resulting in large efficiency losses relative to theoretical limits. This work demonstrates nearly perfect reflection of low-energy photons (˜99%) by embedding an air layer within the TPV cell. This result represents a four-fold reduction in parasitic absorption relative to existing TPV cells. As out-of-band reflectance approaches unity, TPV efficiency becomes nearly insensitive to cell bandgap and emitter temperature. Accessing this regime unlocks a range of possible materials and heat sources that were previously inaccessible to TPV energy conversion.Type: GrantFiled: April 16, 2021Date of Patent: February 13, 2024Assignee: THE REGENTS OF THE UNIVERSITY OF MICHIGANInventors: Tobias Burger, Byungjun Lee, Dejiu Fan, Andrej Lenert, Stephen R. Forrest
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Publication number: 20230290883Abstract: A transistor device includes a channel region, a first source/drain region adjacent to a first end of the channel region and a second source/drain region adjacent to a second end of the channel region, a gate structure disposed on the channel region, the first source/drain region and the second source/drain region, and an interlayer dielectric (ILD) structure disposed on the gate structure. The ILD structure includes a first dielectric layer including a first set of sublayers. The first set of sublayers includes a first sublayer including a first dielectric material having a first hydrogen concentration and a second sublayer including the first dielectric material having a second hydrogen concentration lower than the first hydrogen concentration. The ILD structure further includes a second dielectric layer including a second set of sublayers. The second set of sublayers includes a third sublayer including a second dielectric material different from the first dielectric material.Type: ApplicationFiled: March 10, 2022Publication date: September 14, 2023Inventors: Yun-Chu Tsai, Dejiu Fan, Jung Bae Kim, Yang Ho Bae, Rodney Shunleong Lim, Dong Kil Yim
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Patent number: 11716864Abstract: An organic optoelectronic device comprises a substrate having first and second regions, a first electrode positioned over the first region of the substrate, a shutter electrode positioned over the second region of the substrate, an organic heterojunction layer comprising an organic heterojunction material, positioned over at least a portion of the first electrode, an insulator layer positioned over at least a portion of the shutter electrode, an organic channel layer, comprising an organic channel material, positioned over at least a portion of the heterojunction and insulator layers, and a second electrode positioned over the channel layer in the second region of the substrate, wherein the shutter electrode is configured to generate a repulsive potential barrier in the channel layer, suitable to at least reduce movement of charge in the channel layer. A method of measuring received light in an optoelectronic device is also described.Type: GrantFiled: July 3, 2020Date of Patent: August 1, 2023Assignee: The Regents of the University of MichiganInventors: Stephen R. Forrest, Caleb Coburn, Dejiu Fan
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Publication number: 20220399514Abstract: An ultra-thin shadow mask comprises a plastic foil including a plurality of apertures, wherein the ultra-thin shadow mask is less than 25 ?m thick, and wherein the ultra-thin shadow mask has a feature size of at least 1 ?m to about 100 ?m. An organic photovoltaic (OPV) device comprises a first electrode including a first grid structure, the first grid structure having a feature size of at least 1 ?m to about 100 ?m, a heterojunction under the first electrode, a second electrode under the heterojunction including a second grid structure, and a plurality of outcoupling layers over the first electrode. Related methods are also disclosed.Type: ApplicationFiled: June 15, 2022Publication date: December 15, 2022Inventors: Stephen R. FORREST, Dejiu FAN, Xinjing Huang
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Publication number: 20220278280Abstract: A method of fabricating an organic optoelectronic device comprises positioning a patterning layer over a substrate, etching the patterning layer using a photolithographic process to create an etched patterning layer, positioning a layer of an organic material over the etched patterning layer, and removing at least a portion of the etched patterning layer and at least a portion of the layer of the organic material to create a patterned organic layer over the substrate.Type: ApplicationFiled: March 1, 2022Publication date: September 1, 2022Inventors: Stephen R. Forrest, Xinjing Huang, Dejiu Fan
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Publication number: 20210328087Abstract: To reach high efficiencies, thermophotovoltaic cells must utilize the broad spectrum of a radiative thermal source. One promising approach to overcome this challenge is to have low-energy photons reflected and reabsorbed by the thermal emitter, where their energy can have another chance at contributing toward photogeneration in the cell. However, current methods for photon recuperation are limited by insufficient bandwidth or parasitic absorption, resulting in large efficiency losses relative to theoretical limits. This work demonstrates nearly perfect reflection of low-energy photons (˜99%) by embedding an air layer within the TPV cell. This result represents a four-fold reduction in parasitic absorption relative to existing TPV cells. As out-of-band reflectance approaches unity, TPV efficiency becomes nearly insensitive to cell bandgap and emitter temperature. Accessing this regime unlocks a range of possible materials and heat sources that were previously inaccessible to TPV energy conversion.Type: ApplicationFiled: April 16, 2021Publication date: October 21, 2021Applicant: THE REGENTS OF THE UNIVERSITY OF MICHIGANInventors: Tobias BURGER, Byungjun LEE, Dejiu FAN, Andrej LENERT, Stephen R. FORREST
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Publication number: 20210028233Abstract: An organic optoelectronic device comprises a substrate having first and second regions, a first electrode positioned over the first region of the substrate, a shutter electrode positioned over the second region of the substrate, an organic heterojunction layer comprising an organic heterojunction material, positioned over at least a portion of the first electrode, an insulator layer positioned over at least a portion of the shutter electrode, an organic channel layer, comprising an organic channel material, positioned over at least a portion of the heterojunction and insulator layers, and a second electrode positioned over the channel layer in the second region of the substrate, wherein the shutter electrode is configured to generate a repulsive potential barrier in the channel layer, suitable to at least reduce movement of charge in the channel layer. A method of measuring received light in an optoelectronic device is also described.Type: ApplicationFiled: July 3, 2020Publication date: January 28, 2021Inventors: Stephen R. FORREST, Caleb COBURN, Dejiu FAN
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Patent number: 10680132Abstract: The present disclosure relates to methods and growth structures for making thin-film electronic and optoelectronic devices, such as flexible photovoltaic devices, using epitaxial lift-off (ELO). In particular, disclosed herein are wafer protection schemes that preserve the integrity of the wafer surface during ELO and increase the number of times that the wafer may be used for regrowth. The wafer protection schemes use growth structures that include at least one superlattice layer.Type: GrantFiled: January 15, 2015Date of Patent: June 9, 2020Assignee: The Regents of the University of MichiganInventors: Stephen R. Forrest, Kyusang Lee, Dejiu Fan
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Patent number: 10340187Abstract: Disclosed herein are methods to eliminate or reduce the peeling-off of epitaxial lifted-off thin film epilayers on secondary host substrates that allow for the fabrication of high yield ELO processed thin film devices. The methods employ patterned strain-relief trenches.Type: GrantFiled: March 18, 2016Date of Patent: July 2, 2019Assignee: The Regents of the University of MichiganInventors: Stephen R. Forrest, Kyusang Lee, Dejiu Fan
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Patent number: 10069033Abstract: There is disclosed a method of preparing a photovoltaic device. In particular, the method comprises integrating epitaxial lift-off solar cells with mini-parabolic concentrator arrays via a printing method. Thus, there is disclosed a method comprising providing a growth substrate; depositing at least one protection layer on the growth substrate; depositing at least one sacrificial layer on the protection layer; depositing at least one photoactive cell on the sacrificial layer; etching a pattern of at least two parallel trenches that extend from the at least one photoactive cell to the sacrificial layer; depositing a metal on the at least one photoactive cell; bonding said metal to a host substrate; and removing the sacrificial layer with one or more etch steps. The host substrate can be a siloxane, which when rolled, can form a stamp used to integrate solar cells into concentrator arrays. There are also disclosed a method of making a growth substrate and the growth substrate made therefrom.Type: GrantFiled: January 15, 2015Date of Patent: September 4, 2018Assignee: The Regents of the University of MichiganInventors: Stephen R. Forrest, Kyusang Lee, Dejiu Fan, Jeramy Zimmerman
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Publication number: 20180047627Abstract: Disclosed herein are methods to eliminate or reduce the peeling-off of epitaxial lifted-off thin film epilayers on secondary host substrates that allow for the fabrication of high yield ELO processed thin film devices. The methods employ patterned strain-relief trenches.Type: ApplicationFiled: March 18, 2016Publication date: February 15, 2018Inventors: Stephen R. FORREST, Kyusang LEE, Dejiu FAN
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Publication number: 20170076986Abstract: Disclosed are methods for preserving the integrity of large-sized growth substrates. The methods pertain to accelerating the rate of epitaxial liftoff, and improved cleaning and etching steps. Also disclosed are devices produced therein.Type: ApplicationFiled: July 15, 2016Publication date: March 16, 2017Inventors: Stephen R. Forrest, Kyusang Lee, Dejiu Fan, Byungjun Lee
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Publication number: 20160351747Abstract: The present disclosure relates to methods and growth structures for making thin-film electronic and optoelectronic devices, such as flexible photovoltaic devices, using epitaxial lift-off (ELO). In particular, disclosed herein are wafer protection schemes that preserve the integrity of the wafer surface during ELO and increase the number of times that the wafer may be used for regrowth. The wafer protection schemes use growth structures that include at least one superlattice layer.Type: ApplicationFiled: January 15, 2015Publication date: December 1, 2016Inventors: Stephen R. Forrest, Kyusang Lee, Dejiu Fan
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Publication number: 20160329457Abstract: There is disclosed a method of preparing a photovoltaic device. In particular, the method comprises integrating epitaxial lift-off solar cells with mini-parabolic concentrator arrays via a printing method. Thus, there is disclosed a method comprising providing a growth substrate; depositing at least one protection layer on the growth substrate; depositing at least one sacrificial layer on the protection layer; depositing at least one photoactive cell on the sacrificial layer; etching a pattern of at least two parallel trenches that extend from the at least one photoactive cell to the sacrificial layer; depositing a metal on the at least one photoactive cell; bonding said metal to a host substrate; and removing the sacrificial layer with one or more etch steps. The host substrate can be a siloxane, which when rolled, can form a stamp used to integrate solar cells into concentrator arrays. There are also disclosed a method of making a growth substrate and the growth substrate made therefrom.Type: ApplicationFiled: January 15, 2015Publication date: November 10, 2016Applicant: The Regents of the University of MichiganInventors: Stephen R. Forrest, Kyusang Lee, Dejiu Fan, Jeramy Zimmerman